MM3Z6V8ST1

MM3Z3V3ST1 SERIES Zener Voltage Regulators 200 mW SOD−323 Surface Mount Tight Tolerance Portfolio This series of Zener diodes is packaged in a SOD−323 surface mount package that has a power dissipation of 200 mW. They are designed to provide voltage regulation protection and are especially attractive in situations where space is at a premium. They are well suited for applications such as cellular phones, hand−held portables, and high density PC boards. Specification Features: http://onsemi.com 1 Cathode 2 Anode • Standard Zener Breakdown Voltage Range − • • • • • • • 2 1 SOD−323 CASE 477 STYLE 1 MARKING DIAGRAM XXMG G 3.3 V to 36 V Steady State Power Rating of 200 mW Small Body Outline Dimensions: 0.067″ x 0.049″ (1.7 mm x 1.25 mm) Low Body Height: 0.035″ (0.9 mm) Package Weight: 4.507 mg/unit ESD Rating of Class 3 (>16 kV) per Human Body Model Tight Tolerance VZ Pb−Free Packages are Available XX = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. Mechanical Characteristics: CASE: Void-free, transfer-molded plastic FINISH: All external surfaces are corrosion resistant MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: ORDERING INFORMATION Device MM3ZxxxST1 MM3ZxxxST1G MM3ZxxxST3 MM3ZxxxST3G Package SOD−323 SOD−323 (Pb−Free) SOD−323 SOD−323 (Pb−Free) Shipping† 3000/Tape & Reel 3000/Tape & Reel 10,000/Tape & Reel 10,000/Tape & Reel 260°C for 10 Seconds LEADS: Plated with Pb−Sn or Sn only (Pb−Free) POLARITY: Cathode indicated by polarity band FLAMMABILITY RATING: UL 94 V−0 MOUNTING POSITION: Any MAXIMUM RATINGS Rating Total Device Dissipation FR−5 Board, (Note 1) @ TA = 25°C Derate above 25°C Thermal Resistance from Junction−to−Ambient Junction and Storage Temperature Range Symbol PD Max 200 1.5 635 −65 to +150 Unit mW mW/°C °C/W °C †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. DEVICE MARKING INFORMATION See specific marking information in the device marking column of the Electrical Characteristics table on page 2 of this data sheet. RqJA TJ, Tstg Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−4 Minimum Pad. © Semiconductor Components Industries, LLC, 2009 October, 2009 − Rev. 16 1 Publication Order Number: MM3Z2V4ST1/D MM3Z3V3ST1 SERIES ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA for all types) Symbol VZ IZT ZZT IZK ZZK IR VR IF VF QVZ C Parameter Reverse Zener Voltage @ IZT Reverse Current Maximum Zener Impedance @ IZT Reverse Current Maximum Zener Impedance @ IZK Reverse Leakage Current @ VR Reverse Voltage Forward Current Forward Voltage @ IF Maximum Temperature Coefficient of VZ Max. Capacitance @VR = 0 and f = 1 MHz VZ VR IR VF IZT V IF I Zener Voltage Regulator ELECTRICAL CHARACTERISTICS (VF = 0.9 Max @ IF = 10 mA for all types) Zener Voltage VZ Min 2.90 3.32 3.89 4.17 4.55 4.98 5.49 6.06 6.65 7.28 8.02 8.85 9.80 11.74 14.34 15.85 17.56 21.54 23.72 26.19 32.15 35.07 Max 3.11 3.53 4.16 4.43 4.75 5.2 5.73 6.33 6.93 7.6 8.36 9.23 10.20 12.24 14.98 16.51 18.35 22.47 24.78 27.53 33.79 36.87 ZZK IZ = 0.5 mA W Max 1000 1000 1000 1000 800 500 200 100 160 160 160 160 160 80 80 80 80 100 120 300 300 500 ZZT IZ = IZT @ 10% Mod W Max 100 95 90 90 80 60 40 10 15 15 15 15 15 25 40 40 45 55 70 80 80 90 Max IR @ VR mA 10 5.0 3.0 3.0 3.0 2.0 1.0 3.0 2.0 1.0 0.7 0.5 0.5 0.1 0.1 0.05 0.05 0.05 0.05 0.05 0.05 0.05 V 1.0 1.0 1.0 1.0 2.0 2.0 2.0 4.0 4.0 5.0 5.0 6.0 6.0 8.0 11 11.2 12.6 15.4 16.8 18.9 23.2 25.2 dVZ/dt (mV/k) @ IZT1 = 5 mA Min −3.5 −3.5 −3.5 −3.5 −3.5 −2.7 −2.0 0.4 1.2 2.5 3.2 3.8 4.5 6.0 8.8 10.4 12.4 16.4 18.4 21.4 27.4 30.4 Max 0 0 −2.5 0 0.2 1.2 2.5 3.7 4.5 5.3 6.2 7.0 8.0 10 12.7 14 16 20 22 25.3 33.4 37.4 Device* MM3Z3V0ST1, G MM3Z3V3ST1, G MM3Z3V9ST1, G MM3Z4V3ST1, G MM3Z4V7ST1, G MM3Z5V1ST1, G MM3Z5V6ST1, G MM3Z6V2ST1, G MM3Z6V8ST1, G MM3Z7V5ST1, G MM3Z8V2ST1, G MM3Z9V1ST1, G MM3Z10VST1, G MM3Z12VST1, G MM3Z15VST1, G MM3Z16VST1, G MM3Z18VST1, G MM3Z22VST1G MM3Z24VST1G MM3Z27VST1G MM3Z33VST1G MM3Z36VST1G Device Marking T4 T5 T7 T8 T9 TA TC TE TF TG TH TK WB TN TP TU TW WP WT WQ WR WU Test Current Izt mA 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 C pF Max @ VR = 0 f = 1 MHz 450 450 450 450 260 225 200 185 155 140 135 130 130 130 130 105 100 85 80 70 70 70 *The “G’’ suffix indicates Pb−Free package available. http://onsemi.com 2 MM3Z3V3ST1 SERIES TYPICAL CHARACTERISTICS 1000 Z ZT , DYNAMIC IMPEDANCE ( Ω ) TJ = 25°C IZ(AC) = 0.1 IZ(DC) f = 1 kHz 1000 IF, FORWARD CURRENT (mA) 100 100 IZ = 1 mA 10 5 mA 10 150°C 75°C 1.0 0.4 0.5 25°C 0°C 1.1 1.2 1.0 3.0 VZ, NOMINAL ZENER VOLTAGE 10 0.6 0.7 0.8 0.9 1.0 VF, FORWARD VOLTAGE (V) Figure 1. Effect of Zener Voltage on Zener Impedance 1000 IR, LEAKAGE CURRENT ( μ A) TA = 25°C C, CAPACITANCE (pF) 0 V BIAS 1 V BIAS 1000 100 10 1.0 0.1 0.01 Figure 2. Typical Forward Voltage 100 BIAS AT 50% OF VZ NOM 10 +150°C 0.001 + 25°C − 55°C 0 5.0 VZ, NOMINAL ZENER VOLTAGE (V) 10 0.0001 1.0 4.0 VZ, NOMINAL ZENER VOLTAGE (V) 10 0.00001 Figure 3. Typical Capacitance Figure 4. Typical Leakage Current 100 TA = 25°C I Z , ZENER CURRENT (mA) 100 80 POWER DISSIPATION (%) 0 2.0 4.0 6.0 VZ, ZENER VOLTAGE (V) 8.0 10 60 40 20 0 10 1.0 0.1 0.01 0 25 50 75 100 TEMPERATURE (°C) 125 150 Figure 5. Zener Voltage versus Zener Current (VZ Up to 9 V) Figure 6. Steady State Power Derating http://onsemi.com 3 MM3Z3V3ST1 SERIES PACKAGE DIMENSIONS SOD−323 CASE 477−02 ISSUE G NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. LEAD THICKNESS SPECIFIED PER L/F DRAWING WITH SOLDER PLATING. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 5. DIMENSION L IS MEASURED FROM END OF RADIUS. MILLIMETERS DIM MIN NOM MAX A 0.80 0.90 1.00 A1 0.00 0.05 0.10 A3 0.15 REF b 0.25 0.32 0.4 C 0.089 0.12 0.177 D 1.60 1.70 1.80 E 1.15 1.25 1.35 L 0.08 HE 2.30 2.50 2.70 STYLE 1: PIN 1. CATHODE 2. ANODE INCHES NOM MAX 0.035 0.040 0.002 0.004 0.006 REF 0.010 0.012 0.016 0.003 0.005 0.007 0.062 0.066 0.070 0.045 0.049 0.053 0.003 0.090 0.098 0.105 HE D b 1 2 E MIN 0.031 0.000 A3 A C L A1 NOTE 3 NOTE 5 SOLDERING FOOTPRINT* 0.63 0.025 0.83 0.033 1.60 0.063 2.85 0.112 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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