MM3Z2V4T1 SERIES
Zener Voltage Regulators
200 mW SOD−323 Surface Mount
This series of Zener diodes is packaged in a SOD−323 surface
mount package that has a power dissipation of 200 mW. They are
designed to provide voltage regulation protection and are especially
attractive in situations where space is at a premium. They are well
suited for applications such as cellular phones, hand held portables,
and high density PC boards.
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1
Cathode
Specification Features:
2
Anode
• Standard Zener Breakdown Voltage Range − 2.4 V to 75 V
• Steady State Power Rating of 200 mW
• Small Body Outline Dimensions:
•
•
•
•
2
0.067” x 0.049” (1.7 mm x 1.25 mm)
Low Body Height: 0.035” (0.9 mm)
Package Weight: 4.507 mg/Unit
ESD Rating of Class 3 (>16 kV) per Human Body Model
Pb−Free Packages are Available
1
SOD−323
CASE 477
STYLE 1
Mechanical Characteristics:
CASE: Void-free, Transfer-Molded Plastic
FINISH: All External Surfaces are Corrosion Resistant
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
MARKING DIAGRAM
xx
G
MAXIMUM RATINGS
Rating
Total Device Dissipation FR−5 Board,
(Note 1) @ TA = 25°C
Derate above 25°C
Symbol
M
260°C for 10 Seconds
LEADS: Plated with Pb−Sn or Sn Only (Pb−Free)
POLARITY: Cathode Indicated by Polarity Band
FLAMMABILITY RATING: UL 94 V−0
MOUNTING POSITION: Any
Max
Unit
200
1.5
mW
mW/°C
PD
Thermal Resistance, Junction−to−Ambient
RqJA
635
°C/W
Junction and Storage Temperature Range
TJ, Tstg
−65 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 Minimum Pad
G
xx = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
MM3ZxxxT1
SOD−323
3000/Tape & Reel
MM3ZxxxT1G
SOD−323
(Pb−Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the Electrical Characteristics table on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2006
November, 2006 − Rev. 7
1
Publication Order Number:
MM3Z2V4T1/D
MM3Z2V4T1 SERIES
ELECTRICAL CHARACTERISTICS
Symbol
I
Parameter
VZ
Reverse Zener Voltage @ IZT
IZT
Reverse Current
ZZT
IZK
Maximum Zener Impedance @ IZT
Reverse Current
ZZK
Maximum Zener Impedance @ IZK
IR
Reverse Leakage Current @ VR
VR
Reverse Voltage
IF
Forward Current
VF
Forward Voltage @ IF
QVZ
C
IF
VZ VR
V
IR VF
IZT
Maximum Temperature Coefficient of VZ
Max. Capacitance @VR = 0 and f = 1 MHz
Zener Voltage Regulator
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA for all types)
Zener Voltage (Note 2)
Device
Marking
VZ (Volts)
@ IZT
Zener Impedance
ZZT
@ IZT
Leakage Current
ZZK @ IZK
IR @ VR
QVZ
(mV/k)
@ IZT
C
@ VR = 0
f = 1 MHz
Min
Nom
Max
mA
W
W
mA
mA
Volts
Min
Max
pF
MM3Z2V4T1,
MM3Z2V7T1,
MM3Z3V0T1,
MM3Z3V3T1,
MM3Z3V6T1,
G
G
G
G
G
00
01
02
05
06
2.2
2.5
2.8
3.1
3.4
2.4
2.7
3.0
3.3
3.6
2.6
2.9
3.2
3.5
3.8
5
5
5
5
5
100
100
100
95
90
1000
1000
1000
1000
1000
0.5
0.5
0.5
0.5
0.5
50
20
10
5
5
1.0
1.0
1.0
1.0
1.0
−3.5
−3.5
−3.5
−3.5
−3.5
0
0
0
0
0
450
450
450
450
450
MM3Z3V9T1,
MM3Z4V3T1,
MM3Z4V7T1,
MM3Z5V1T1,
MM3Z5V6T1,
G
G
G
G
G
07
08
09
0A
0C
3.7
4.0
4.4
4.8
5.2
3.9
4.3
4.7
5.1
5.6
4.1
4.6
5.0
5.4
6.0
5
5
5
5
5
90
90
80
60
40
1000
1000
800
500
200
0.5
0.5
0.5
0.5
0.5
3
3
3
2
1
1.0
1.0
2.0
2.0
2.0
−3.5
−3.5
−3.5
−2.7
−2.0
−2.5
0
0.2
1.2
2.5
450
450
260
225
200
MM3Z6V2T1,
MM3Z6V8T1,
MM3Z7V5T1,
MM3Z8V2T1,
MM3Z9V1T1,
G
G
G
G
G
0E
0F
0G
0H
0K
5.8
6.4
7.0
7.7
8.5
6.2
6.8
7.5
8.2
9.1
6.6
7.2
7.9
8.7
9.6
5
5
5
5
5
10
15
15
15
15
100
160
160
160
160
0.5
0.5
0.5
0.5
0.5
3
2
1
0.7
0.2
4.0
4.0
5.0
5.0
7.0
0.4
1.2
2.5
3.2
3.8
3.7
4.5
5.3
6.2
7.0
185
155
140
135
130
MM3Z10VT1, G
MM3Z11VT1, G
MM3Z12VT1, G
MM3Z13VT1, G
MM3Z15VT1, G
0L
0M
0N
0P
0T
9.4
10.4
11.4
12.4
14.3
10
11
12
13.25
15
10.6
11.6
12.7
14.1
15.8
5
5
5
5
5
20
20
25
30
30
160
160
80
80
80
0.5
0.5
0.5
0.5
0.5
0.1
0.1
0.1
0.1
0.05
8.0
8.0
8.0
8.0
10.5
4.5
5.4
6.0
7.0
9.2
8.0
9.0
10
11
13
130
130
130
120
110
MM3Z16VT1,
MM3Z18VT1,
MM3Z20VT1,
MM3Z22VT1,
MM3Z24VT1,
G
G
G
G
G
0U
0W
0Z
10
11
15.3
16.8
18.8
20.8
22.8
16.2
18
20
22
24.2
17.1
19.1
21.2
23.3
25.6
5
5
5
5
5
40
45
55
55
70
80
80
100
100
120
0.5
0.5
0.5
0.5
0.5
0.05
0.05
0.05
0.05
0.05
11.2
12.6
14.0
15.4
16.8
10.4
12.4
14.4
16.4
18.4
14
16
18
20
22
105
100
85
85
80
MM3Z27VT1,
MM3Z30VT1,
MM3Z33VT1,
MM3Z36VT1,
MM3Z39VT1,
G
G
G
G
G
12
14
18
19
20
25.1
28
31
34
37
27
30
33
36
39
28.9
32
35
38
41
2
2
2
2
2
80
80
80
90
130
300
300
300
500
500
0.5
0.5
0.5
0.5
0.5
0.05
0.05
0.05
0.05
0.05
18.9
21.0
23.2
25.2
27.3
21.4
24.4
27.4
30.4
33.4
25.3
29.4
33.4
37.4
41.2
70
70
70
70
45
MM3Z43VT1,
MM3Z47VT1,
MM3Z51VT1,
MM3Z56VT1,
MM3Z62VT1
G
G
G
G
21
1A
1C
1D
1E
40
44
48
52
58
43
47
51
56
62
46
50
54
60
66
2
2
2
2
2
150
170
180
200
215
500
500
500
500
500
0.5
0.5
0.5
0.5
0.5
0.05
0.05
0.05
0.05
0.05
30.1
32.9
35.7
39.2
43.4
37.6
42.0
46.6
52.2
58.8
46.6
51.8
57.2
63.8
71.6
40
40
40
40
35
MM3Z68VT1, G
MM3Z75VT1, G
1F
1G
64
70
68
75
72
79
2
2
240
255
500
500
0.5
0.5
0.05
0.05
47.6
52.5
65.6
73.4
79.8
88.6
35
35
Device*
*The “G’’ suffix indicates Pb−Free package available.
2. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C.
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2
MM3Z2V4T1 SERIES
TYPICAL CHARACTERISTICS
1000
TJ = 25°C
IZ(AC) = 0.1 IZ(DC)
f = 1 kHz
IF, FORWARD CURRENT (mA)
Z ZT , DYNAMIC IMPEDANCE (Ω)
1000
100
100
IZ = 1 mA
5 mA
10
150°C
10
75°C
3.0
10
VZ, NOMINAL ZENER VOLTAGE
80
0.4
Figure 1. Effect of Zener Voltage on Zener Impedance
0°C
0.5
0.6
0.7
0.8
0.9
1.0
VF, FORWARD VOLTAGE (V)
1.1
1.2
Figure 2. Typical Forward Voltage
1000
IR, LEAKAGE CURRENT (μ A)
1000
TA = 25°C
C, CAPACITANCE (pF)
25°C
1.0
1.0
0 V BIAS
100
1 V BIAS
BIAS AT
50% OF VZ NOM
10
100
10
1.0
+150°C
0.1
0.01
0.001
+ 25°C
0.0001
−55°C
0.00001
1.0
4.0
10
VZ, NOMINAL ZENER VOLTAGE (V)
70
0
Figure 3. Typical Capacitance
10
20
30
40
50
60
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 4. Typical Leakage Current
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3
70
MM3Z2V4T1 SERIES
TYPICAL CHARACTERISTICS
100
100
TA = 25°C
IZ , ZENER CURRENT (mA)
10
1.0
0.1
0.01
10
1
0.1
0.01
0
2.0
4.0
6.0
8.0
VZ, ZENER VOLTAGE (V)
10
12
10
30
50
70
VZ, ZENER VOLTAGE (V)
100
80
60
40
20
0
0
25
90
Figure 6. Zener Voltage versus Zener Current
(12 V to 75 V)
Figure 5. Zener Voltage versus Zener Current
(VZ Up to 12 V)
POWER DISSIPATION (%)
I Z , ZENER CURRENT (mA)
TA = 25°C
50
75
100
TEMPERATURE (°C)
125
Figure 7. Steady State Power Derating
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4
150
MM3Z2V4T1 SERIES
PACKAGE DIMENSIONS
SOD−323
CASE 477−02
ISSUE G
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. LEAD THICKNESS SPECIFIED PER L/F DRAWING
WITH SOLDER PLATING.
4. DIMENSIONS A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
5. DIMENSION L IS MEASURED FROM END OF
RADIUS.
HE
D
b
1
2
E
MILLIMETERS
DIM MIN
NOM MAX
A
0.80
0.90
1.00
A1 0.00
0.05
0.10
A3
0.15 REF
b
0.25
0.32
0.4
C 0.089
0.12 0.177
D
1.60
1.70
1.80
E
1.15
1.25
1.35
L
0.08
HE
2.30
2.50
2.70
A3
A
C
NOTE 3
L
NOTE 5
A1
INCHES
NOM MAX
0.035 0.040
0.002 0.004
0.006 REF
0.010 0.012 0.016
0.003 0.005 0.007
0.062 0.066 0.070
0.045 0.049 0.053
0.003
0.090 0.098 0.105
MIN
0.031
0.000
STYLE 1:
PIN 1. CATHODE
2. ANODE
SOLDERING FOOTPRINT*
0.63
0.025
0.83
0.033
1.60
0.063
2.85
0.112
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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MM3Z2V4T1/D