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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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MMBD1401 / MMBD1403 / MMBD1404 / MMBD1405
Small Signal Diodes
Connection Diagrams
1401
3
1
1404 3
2
3
3 1403
2NC
1
2
3 1405
2
1
2
1
1
SOT-23
Ordering Information
Part Number
Top Mark
Package
Packing Method
MMBD1401
29
SOT-23 3L
Tape and Reel
MMBD1403
32
SOT-23 3L
Tape and Reel
MMBD1404
33
SOT-23 3L
Tape and Reel
MMBD1405
34
SOT-23 3L
Tape and Reel
Absolute Maximum Ratings(1), (2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
VRRM
Maximum Repetitive Reverse Voltage
200
V
IF(AV)
Average Rectified Forward Current
200
mA
IFSM
Non-Repetitive Peak Forward
Surge Current
TSTG
Storage Temperature Range
TJ
Operating Junction Temperature
Pulse Width = 1.0 second
1.0
Pulse Width = 1.0 microsecond
2.0
A
-55 to +150
°C
150
°C
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operations.
© 2002 Fairchild Semiconductor Corporation
MMBD1401 / MMBD1403 / MMBD1404 / MMBD1405 Rev. 1.1.0
www.fairchildsemi.com
MMBD1401 / MMBD1403 / MMBD1404 / MMBD1405 — Small Signal Diodes
November 2014
Values are at TA = 25°C unless otherwise noted.
Symbol
PD
RθJA
Parameter
Value
Unit
Power Dissipation
350
mW
Thermal Resistance, Junction-to-Ambient
357
°C/W
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
BV
Parameter
Breakdown Voltage
Conditions
IR = 100 μA
Min.
IF = 10 mA
VF
Forward Voltage
Max.
200
Unit
V
800
mV
920
mV
IF = 200 mA
1.0
V
IF = 300 mA
1.1
V
VR = 120 V
40
nA
IF = 50 mA
760
IR
Reverse Current
VR = 175 V
100
nA
CT
Total Capacitance
VR = 0, f = 1.0 MHz
2.0
pF
trr
Reverse Recovery Time
IF = IR = 30 mA, IRR = 3.0 mA,
RL = 100 Ω
50
nS
© 2002 Fairchild Semiconductor Corporation
MMBD1401 / MMBD1403 / MMBD1404 / MMBD1405 Rev. 1.1.0
www.fairchildsemi.com
2
MMBD1401 / MMBD1403 / MMBD1404 / MMBD1405 — Small Signal Diodes
Thermal Characteristics
IR - REVERSE CURRENT (nA)
VVRR - REVERSE VOLTAGE (V)
325
Ta= 25°C
300
275
3
5
10
20
30
50
I R - REVERSE CURRENT (uA)
80
70
60
50
40
30
200
220
240
VR - REVERSE VOLTAGE (V)
30
20
10
0
55
75
95
115 135 155 175 195
V R - REVERSE VOLTAGE (V)
Figure 2. Reverse Current vs. Reverse Voltage
IR - 55 to 205 V
Ta= 25°C
20
180
40
GENERAL RULE: The Reverse Current of a diode will approximately
double for every ten (10) Degree C increase in Temperature
V
VFF - FORWARD VOLTAGE (mV)
IIRR - REVERSE CURRENT (nA)
90
Ta= 25°C
100
Figure 1. Reverse Voltage vs. Reverse Current
BV - 1.0 to 100 μA
100
50
255
Ta= 25°C
450
400
350
300
250
1
GENERAL RULE: The Reverse Current of a diode will approximately
double for every ten Degree C increase in Temperature
Figure 3. Reverse Current vs. Reverse Voltage
IR - 180 to 255 V
2
3
5
10
20 30
50
IF - FORWARD CURRENT (uA)
100
Figure 4. Forward Voltage vs. Forward Current
VF - 1.0 to 100 μA
VVFF - FORWARD VOLTAGE (mV)
VVF F - FORWARD VOLTAGE (mV)
VF - 0.1 to 10 mA
725
Ta= 25°C
700
650
600
550
500
450
0.1
0.2 0.3 0.5
1
2
3
5
I F - FORWARD CURRENT (mA)
10
Figure 5. Forward Voltage vs. Forward Current
VF - 0.1 to 10 mA
© 2002 Fairchild Semiconductor Corporation
MMBD1401 / MMBD1403 / MMBD1404 / MMBD1405 Rev. 1.1.0
1.4
Ta= 25°C
1.3
1.2
1.1
1
0.9
0.8
0.7
10
20
30
50
100
200 300
IF - FORWARD CURRENT (mA)
500
800
Figure 6. Forward Voltage vs. Forward Current
VF - 10 to 800 mA
www.fairchildsemi.com
3
MMBD1401 / MMBD1403 / MMBD1404 / MMBD1405 — Small Signal Diodes
Typical Performance Characteristics
CAPACITANCE (pF)
VVFF - FORWARD VOLTAGE (mV)
1.3
Ta= -40°C
600
Ta= 25°C
400
Ta= +80°C
1.2
1.1
1
0.9
200
0.8
0.001 0.003 0.01 0.03 0.1 0.3
1
I F - FORWARD CURRENT (mA)
3
10
Figure 7. Forward Voltage vs. Ambient Temperature
VF - 1.0 μA - 10 mA (- 40 to +80°C)
500
50
40
30
20
0
IF = IR = 30 mA
Rloop = 100 Ohms
1
1.5
2
2.5
Irr - REVERSE RECOVERY CURRENT (mA)
2
4
6
8
10
REVERSE VOLTAGE (V)
12
14 15
Figure 8. Capacitance vs. Reverse Voltage
I - CURRENT (mA)
REVERSE RECOVERY (nS)
Ta= 25°C
800
400
300
-F
OR
WA
RD
CU
RR
EN
TS
TE
AD
Y
Io - A
ST
VER
AT
AGE
E
REC
-m
TIFIE
D CU
A
RRE
NT mA
200
100
0
3
IR
0
50
100
150
o
TA - AMBIENT TEMPERATURE ( C)
Figure 10. Average Rectified Current(IO) and
Forward Current (IF) vs. Ambient Temperature(TA)
Figure 9. Reverse Recovery Time vs.
Reverse Recovery Current (Irr)
PD - POWER DISSIPATION (mW)
500
400
DO-35 Pkg
300
SOT-23 Pkg
200
100
0
0
50
100
150
IO - AVERAGE TEMPERATURE ( oC)
200
Figure 11. Power Derating Curve
© 2002 Fairchild Semiconductor Corporation
MMBD1401 / MMBD1403 / MMBD1404 / MMBD1405 Rev. 1.1.0
www.fairchildsemi.com
4
MMBD1401 / MMBD1403 / MMBD1404 / MMBD1405 — Small Signal Diodes
Typical Performance Characteristics (Continued)
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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