MMBD301LT1

MBD301, MMBD301LT1 Preferred Device Silicon Hot−Carrier Diodes SCHOTTKY Barrier Diodes These devices are designed primarily for high−efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low−cost, high−volume consumer and industrial/commercial requirements. They are also available in a Surface Mount package. Features http://onsemi.com • • • • Extremely Low Minority Carrier Lifetime − 15 ps (Typ) Very Low Capacitance − 1.5 pF (Max) @ VR = 15 V Low Reverse Leakage − IR = 13 nAdc (Typ) MBD301, MMBD301 Pb−Free Packages are Available 30 VOLTS SILICON HOT−CARRIER DETECTOR AND SWITCHING DIODES MBD301 MARKING DIAGRAM TO−92 (TO−226AC) CASE 182 STYLE 1 MBD 301 AYWWG G MAXIMUM RATINGS MBD301 Rating Reverse Voltage Total Device Dissipation @ TA = 25°C Derate above 25°C Operating Junction Temperature Range Storage Temperature Range Symbol VR PF 280 2.8 TJ Tstg 200 2.0 −55 to +125 −55 to +150 mW mW/°C °C °C MMBD301LT1 Value 30 Unit V 1 2 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 2 CATHODE 1 ANODE MMBD301LT1 MARKING DIAGRAM 3 1 2 SOT−23 (TO−236) CASE 318 STYLE 8 4T M G G 1 M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) 3 CATHODE 1 ANODE ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2007 1 January, 2007 − Rev. 4 Publication Order Number: MBD301/D MBD301, MMBD301LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 mA) Total Capacitance (VR = 15 V, f = 1.0 MHz) Figure 1 Reverse Leakage (VR = 25 V) Figure 3 Forward Voltage (IF = 1.0 mAdc) Figure 4 Forward Voltage (IF = 10 mAdc) Figure 4 Symbol V(BR)R CT IR VF VF Min 30 − − − − Typ − 0.9 13 0.38 0.52 Max − 1.5 200 0.45 0.6 Unit V pF nAdc Vdc Vdc ORDERING INFORMATION Device MBD301 MBD301G MMBD301LT1 MMBD301LT1G MMBD301LT3 MMBD301LT3G Package TO−92 TO−92 (Pb−Free) SOT−23 SOT−23 (Pb−Free) SOT−23 SOT−23 (Pb−Free) Shipping† 5000 Units / Bulk 5000 Units / Bulk 3000 / Tape & Reel 3000 / Tape & Reel 10,000 / Tape & Reel 10,000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 MBD301, MMBD301LT1 TYPICAL ELECTRICAL CHARACTERISTICS 2.8 C T, TOTAL CAPACITANCE (pF) 2.4 2.0 1.6 1.2 0.8 0.4 0 0 3.0 6.0 18 9.0 12 15 21 VR, REVERSE VOLTAGE (VOLTS) 24 27 30 f = 1.0 MHz 500 t , MINORITY CARRIER LIFETIME (ps) 400 KRAKAUER METHOD 300 200 100 0 0 10 20 30 40 50 60 70 IF, FORWARD CURRENT (mA) 80 90 100 Figure 1. Total Capacitance Figure 2. Minority Carrier Lifetime 10 TA = 100°C 100 IF, FORWARD CURRENT (mA) IR, REVERSE LEAKAGE (m A) 1.0 10 TA = 85°C TA = −40°C 0.1 75°C 0.01 25°C 1.0 TA = 25°C 0.001 0 6.0 12 18 VR, REVERSE VOLTAGE (VOLTS) 24 30 0.1 0.2 0.4 0.6 0.8 VF, FORWARD VOLTAGE (VOLTS) 1.0 1.2 Figure 3. Reverse Leakage Figure 4. Forward Voltage IF(PEAK) CAPACITIVE CONDUCTION IR(PEAK) FORWARD CONDUCTION STORAGE CONDUCTION SINUSOIDAL GENERATOR BALLAST NETWORK (PADS) PADS DUT SAMPLING OSCILLOSCOPE (50 W INPUT) Figure 5. Krakauer Method of Measuring Lifetime http://onsemi.com 3 MBD301, MMBD301LT1 PACKAGE DIMENSIONS TO−92 (TO−226AC) CASE 182−06 ISSUE L NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND ZONE R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. A B SEATING PLANE R D K L XX D G H V C N SECTION X−X 1 2 N http://onsemi.com 4 ÉÉ ÉÉ P J DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.050 BSC 0.100 BSC 0.014 0.016 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.050 0.115 −−− 0.135 −−− MILLIMETERS MIN MAX 4.45 5.21 4.32 5.33 3.18 4.19 0.407 0.533 1.27 BSC 2.54 BSC 0.36 0.41 12.70 −−− 6.35 −−− 2.03 2.66 −−− 1.27 2.93 −−− 3.43 −−− STYLE 1: PIN 1. ANODE 2. CATHODE MBD301, MMBD301LT1 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN D 3 SEE VIEW C E 1 2 HE c b e q 0.25 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 A L A1 L1 VIEW C DIM A A1 b c D E e L L1 HE MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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