MMBD301LT3

MBD301G, MMBD301LT1G, MMBD301LT3G, SMMBD301LT3G Silicon Hot-Carrier Diodes www.onsemi.com Schottky Barrier Diodes These devices are designed primarily for high−efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low−cost, high−volume consumer and industrial/commercial requirements. They are also available in a Surface Mount package. 30 VOLTS SILICON HOT−CARRIER DETECTOR AND SWITCHING DIODES Features • • • • • Extremely Low Minority Carrier Lifetime − 15 ps (Typ) Very Low Capacitance − 1.5 pF (Max) @ VR = 15 V Low Reverse Leakage − IR = 13 nAdc (Typ) MBD301, MMBD301 S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Reverse Voltage Forward Current (DC) Total Device Dissipation @ TA = 25°C MBD301G MMBD301LT1G, MMBD301LT3G, SMMBD301LT3G Symbol Value Unit VR 30 V IF 200 (Max) mA Storage Temperature Range March, 2018 − Rev. 9 SOT−23 2 CATHODE 1 ANODE 3 CATHODE 1 ANODE MBD 301 AYW G G 4T M G G MW 280 200 TO−92 mW/°C 2.8 2.0 TJ −55 to +125 °C Tstg −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. © Semiconductor Components Industries, LLC, 1994 TO−92 1 PF Derate above 25°C MBD301G MMBD301LT1G, MMBD301LT3G, SMMBD301LT3G Operating Junction Temperature Range SOT−23 (TO−236) CASE 318 STYLE 8 MARKING DIAGRAMS MAXIMUM RATINGS Rating TO−92 2−Lead CASE 182 STYLE 1 1 SOT−23 A = Assembly Location Y = Year W = Work Week 4T = Device Code (SOT−23) M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Publication Order Number: MBD301/D MBD301G, MMBD301LT1G, MMBD301LT3G, SMMBD301LT3G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Reverse Breakdown Voltage (IR = 10 mA) V(BR)R Total Capacitance (VR = 15 V, f = 1.0 MHz) Figure 1 CT Reverse Leakage (VR = 25 V) Figure 3 IR Forward Voltage (IF = 1.0 mAdc) Figure 4 VF Forward Voltage (IF = 10 mAdc) Figure 4 VF Min Typ Max 30 − − − 0.9 1.5 − 13 200 − 0.38 0.45 − 0.52 0.6 Unit V pF nAdc Vdc Vdc Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION Package Shipping† MBD301G TO−92 (Pb−Free) 5,000 Units / Bulk MMBD301LT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel MMBD301LT3G SOT−23 (Pb−Free) 10,000 / Tape & Reel SMMBD301LT3G SOT−23 (Pb−Free) 10,000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2 MBD301G, MMBD301LT1G, MMBD301LT3G, SMMBD301LT3G TYPICAL ELECTRICAL CHARACTERISTICS 2.8 500 t , MINORITY CARRIER LIFETIME (ps) C T, TOTAL CAPACITANCE (pF) f = 1.0 MHz 2.4 2.0 1.6 1.2 0.8 0.4 400 KRAKAUER METHOD 300 200 100 0 0 0 3.0 6.0 18 9.0 12 15 21 VR, REVERSE VOLTAGE (VOLTS) 24 27 30 0 Figure 1. Total Capacitance 30 40 50 60 70 IF, FORWARD CURRENT (mA) 80 90 100 100 IF, FORWARD CURRENT (mA) IR, REVERSE LEAKAGE (m A) 20 Figure 2. Minority Carrier Lifetime 10 TA = 100°C 1.0 75°C 0.1 25°C 0.01 0.001 10 10 TA = -40°C TA = 85°C 1.0 TA = 25°C 0.1 0 6.0 12 18 VR, REVERSE VOLTAGE (VOLTS) 24 30 0.2 Figure 3. Reverse Leakage IF(PEAK) 0.4 0.6 0.8 VF, FORWARD VOLTAGE (VOLTS) 1.0 Figure 4. Forward Voltage CAPACITIVE CONDUCTION IR(PEAK) FORWARD CONDUCTION SINUSOIDAL GENERATOR BALLAST NETWORK (PADS) STORAGE CONDUCTION PADS DUT Figure 5. Krakauer Method of Measuring Lifetime www.onsemi.com 3 SAMPLING OSCILLOSCOPE (50 W INPUT) 1.2 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−92 (TO−226) CASE 182−06 ISSUE L DATE 04/18/1998 SCALE 1:1 A B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND ZONE R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. R SEATING PLANE D ÉÉ ÉÉ L P J K D DIM A B C D G H J K L N P R V SECTION X−X X X G H V 1 C INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.050 BSC 0.100 BSC 0.014 0.016 0.500 --0.250 --0.080 0.105 --0.050 0.115 --0.135 --- MILLIMETERS MIN MAX 4.45 5.21 4.32 5.33 3.18 4.19 0.407 0.533 1.27 BSC 2.54 BSC 0.36 0.41 12.70 --6.35 --2.03 2.66 --1.27 2.93 --3.43 --- N 2 N STYLE 1: PIN 1. ANODE 2. CATHODE DOCUMENT NUMBER: DESCRIPTION: STYLE 2: PIN 1. CATHODE 2. ANODE 98ASB42118B TO−92 (TO−226) STYLE 3: PIN 1. MAIN TERMINAL 1 2. MAIN TERMINAL 2 STYLE 4: CANCELLED STYLE 5: PIN 1. INPUT 2. OUTPUT Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AS DATE 30 JAN 2018 SCALE 4:1 D 0.25 3 E 1 2 T HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW SEE VIEW C c MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0° INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10° GENERIC MARKING DIAGRAM* END VIEW RECOMMENDED SOLDERING FOOTPRINT XXXMG G 1 3X 2.90 3X XXX = Specific Device Code M = Date Code G = Pb−Free Package 0.90 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS STYLE 1 THRU 5: CANCELLED STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 7: PIN 1. EMITTER 2. BASE 3. COLLECTOR STYLE 9: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE STYLE 11: STYLE 12: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. CATHODE 3. CATHODE−ANODE 3. ANODE STYLE 15: PIN 1. GATE 2. CATHODE 3. ANODE STYLE 16: PIN 1. ANODE 2. CATHODE 3. CATHODE STYLE 17: PIN 1. NO CONNECTION 2. ANODE 3. CATHODE STYLE 18: STYLE 19: STYLE 20: PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE 2. CATHODE 2. ANODE 2. ANODE 3. GATE 3. ANODE 3. CATHODE−ANODE STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 22: PIN 1. RETURN 2. OUTPUT 3. INPUT STYLE 23: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 24: PIN 1. GATE 2. DRAIN 3. SOURCE STYLE 27: PIN 1. CATHODE 2. CATHODE 3. CATHODE STYLE 28: PIN 1. ANODE 2. ANODE 3. ANODE DOCUMENT NUMBER: DESCRIPTION: 98ASB42226B SOT−23 (TO−236) STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE STYLE 13: PIN 1. SOURCE 2. DRAIN 3. GATE STYLE 25: PIN 1. ANODE 2. CATHODE 3. GATE STYLE 14: PIN 1. CATHODE 2. GATE 3. ANODE STYLE 26: PIN 1. CATHODE 2. ANODE 3. NO CONNECTION Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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