MMBD7000L, SMMBD7000L
Dual Switching Diode
Features
• S Prefix for Automotive and Other Applications Requiring Unique
•
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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MAXIMUM RATINGS (EACH DIODE)
Rating
Symbol
Value
Unit
VR
100
V
Reverse Voltage
Forward Current
IF
200
mA
Forward Surge Current
(60 Hz @ 1 cycle)
IFSM
1.6
A
Repetitive Peak Forward Current
(Pulse Wave = 1 sec, Duty Cycle = 66%)
IFRM
0.5
SOT−23 (TO−236)
CASE 318
STYLE 11
1
ANODE
3
CATHODE/ANODE
A
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR− 5 Board
(Note 1)TA = 25°C
Derate above 25°C
PD
225
mW
1.8
mW/°C
RqJA
556
°C/W
PD
300
mW
2.4
mW/°C
Thermal Resistance, Junction to
Ambient
Total Device Dissipation
Alumina Substrate, (Note 2)
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
°C/W
RqJA
TJ, Tstg
M5C MG
G
1
M5C
M
G
= Specific Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Package
Shipping†
MMBD7000LT1G
SOT−23
(Pb−Free)
3,000 /
Tape & Reel
SMMBD7000LT1G
SOT−23
(Pb−Free)
3,000 /
Tape & Reel
MMBD7000LT3G
SOT−23
(Pb−Free)
10,000 /
Tape & Reel
SMMBD7000LT3G
SOT−23
(Pb−Free)
10,000 /
Tape & Reel
Device
417
°C
−55 to +150
1. FR− 5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
2
CATHODE
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 1994
June, 2017 − Rev. 8
1
Publication Order Number:
MMBD7000LT1/D
MMBD7000L, SMMBD7000L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Symbol
Characteristic
Min
Max
100
−
−
−
−
1.0
3.0
100
0.55
0.67
0.75
0.7
0.82
1.1
−
4.0
−
1.5
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I(BR) = 100 mAdc)
V(BR)
Vdc
mAdc
Reverse Voltage Leakage Current
(VR = 50 Vdc)
(VR = 100 Vdc)
(VR = 50 Vdc, 125°C)
IR
IR2
IR3
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 100 mAdc)
VF
Reverse Recovery Time
(IF = IR = 10 mAdc) (Figure 1)
trr
Capacitance (VR = 0 V)
C
Vdc
ns
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
820 W
+10 V
2.0 k
100 mH
tr
0.1 mF
IF
tp
t
IF
trr
10%
t
0.1 mF
90%
DUT
50 W OUTPUT
PULSE
GENERATOR
50 W INPUT
SAMPLING
OSCILLOSCOPE
iR(REC) = 1.0 mA
IR
VR
INPUT SIGNAL
OUTPUT PULSE
(IF = IR = 10 mA; MEASURED
at iR(REC) = 1.0 mA)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
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2
MMBD7000L, SMMBD7000L
CURVES APPLICABLE TO EACH DIODE
100
10
TA = 85°C
I R , REVERSE CURRENT (m A)
I F, FORWARD CURRENT (mA)
TA = 150°C
TA = -40°C
10
TA = 25°C
1.0
TA = 125°C
1.0
TA = 85°C
0.1
TA = 55°C
0.01
TA = 25°C
0.1
0.2
0.4
0.6
0.8
1.0
0.001
1.2
0
10
VF, FORWARD VOLTAGE (VOLTS)
Figure 2. Forward Voltage
IFSW, FORWARD SURGE MAX CURRENT (A)
C D , DIODE CAPACITANCE (pF)
0.64
0.60
0.56
0.52
2.0
4.0
30
40
50
Figure 3. Leakage Current
0.68
0
20
VR, REVERSE VOLTAGE (VOLTS)
6.0
25
20
15
10
5
0
0.001
8.0
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
0.01
0.1
1
10
tp, PULSE ON TIME (ms)
100
Figure 5. Forward Surge Current
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3
1000
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318
ISSUE AT
DATE 01 MAR 2023
SCALE 4:1
GENERIC
MARKING DIAGRAM*
XXXMG
G
1
XXX = Specific Device Code
M = Date Code
G
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
STYLES ON PAGE 2
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT−23 (TO−236)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 2
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318
ISSUE AT
DATE 01 MAR 2023
STYLE 1 THRU 5:
CANCELLED
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 7:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
STYLE 9:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 10:
PIN 1. DRAIN
2. SOURCE
3. GATE
STYLE 11:
STYLE 12:
PIN 1. ANODE
PIN 1. CATHODE
2. CATHODE
2. CATHODE
3. CATHODE−ANODE
3. ANODE
STYLE 15:
PIN 1. GATE
2. CATHODE
3. ANODE
STYLE 16:
PIN 1. ANODE
2. CATHODE
3. CATHODE
STYLE 17:
PIN 1. NO CONNECTION
2. ANODE
3. CATHODE
STYLE 18:
STYLE 19:
STYLE 20:
PIN 1. CATHODE
PIN 1. NO CONNECTION PIN 1. CATHODE
2. CATHODE
2. ANODE
2. ANODE
3. ANODE
3. CATHODE−ANODE
3. GATE
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
STYLE 22:
PIN 1. RETURN
2. OUTPUT
3. INPUT
STYLE 23:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 24:
PIN 1. GATE
2. DRAIN
3. SOURCE
STYLE 27:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
STYLE 28:
PIN 1. ANODE
2. ANODE
3. ANODE
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT−23 (TO−236)
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
STYLE 13:
PIN 1. SOURCE
2. DRAIN
3. GATE
STYLE 25:
PIN 1. ANODE
2. CATHODE
3. GATE
STYLE 14:
PIN 1. CATHODE
2. GATE
3. ANODE
STYLE 26:
PIN 1. CATHODE
2. ANODE
3. NO CONNECTION
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 2 OF 2
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
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