MMBD330T1G,
SMMBD330T1G,
MMBD770T1G,
SMMBD770T1G
Schottky Barrier Diodes
http://onsemi.com
Schottky barrier diodes are designed primarily for high−efficiency
UHF and VHF detector applications. Readily available to many other
fast switching RF and digital applications. They are housed in the
SOT−323/SC−70 package which is designed for low−power surface
mount applications.
SC−70/SOT−323
CASE 419
Features
Extremely Low Minority Carrier Lifetime
Very Low Capacitance
Low Reverse Leakage
Available in 8 mm Tape and Reel
AEC Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating
Reverse Voltage
MMBD330T1G, SMMBD330T1G
MMBD770T1G, SMMBD770T1G
Forward Continuous Current (DC)
Nonrepetitive Peak Forward Current
(Note 1)
Symbol
VR
Value
Unit
Vdc
30
70
IF
200
mA
IFSM
1.0
A
PF
mW
Junction Temperature
TJ
−55 to +125
C
Tstg
−55 to +150
C
120
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. 60 Hz Halfsine.
3
MARKING DIAGRAMS
XX M G
G
1
XX
4T
5H
M
G
= Specific Device Code
= MMBD330T1
= MMBD770T1
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon the manufacturing location.
ORDERING INFORMATION
Package
Shipping†
MMBD330T1G
SC−70
(Pb−Free)
3,000/Tape & Reel
SMMBD330T1G
SC−70
(Pb−Free)
3,000/Tape & Reel
MMBD770T1G
SC−70
(Pb−Free)
3,000/Tape & Reel
SMMBD770T1G
SC−70
(Pb−Free)
3,000/Tape & Reel
Device
Forward Power Dissipation
TA = 25C
Storage Temperature Range
1
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 6
1
Publication Order Number:
MMBD330T1/D
MMBD330T1G, SMMBD330T1G, MMBD770T1G, SMMBD770T1G
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Symbol
Characteristic
Reverse Breakdown Voltage
(IR = 10 mA)
MMBD330T1G, SMMBD330T1G
MMBD770T1G, SMMBD770T1G
V(BR)R
Diode Capacitance
(VR = 15 Volts, f = 1.0 MHZ)
MMBD330T1G, SMMBD330T1G
(VR = 20 Volts, f = 1.0 MHZ)
MMBD770T1G, SMMBD770T1G
CT
Reverse Leakage
(VR = 25 V)
MMBD330T1G, SMMBD330T1G
(VR = 35 V)
MMBD770T1G, SMMBD770T1G
IR
Forward Voltage
(IF = 1.0 mAdc)
MMBD330T1G, SMMBD330T1G
(IF = 10 mA)
(IF = 1.0 mAdc)
MMBD770T1G, SMMBD770T1G
(IF = 10 mA)
VF
Min
2
Max
Unit
Volts
30
70
http://onsemi.com
Typ
−
−
−
−
pF
−
0.9
1.5
−
0.5
1.0
nAdc
−
13
200
−
9.0
200
Vdc
−
−
0.38
0.52
0.45
0.60
−
−
0.42
0.70
0.50
1.0
MMBD330T1G, SMMBD330T1G, MMBD770T1G, SMMBD770T1G
TYPICAL CHARACTERISTICS
MMBD330T1G, SMMBD330T1G
2.8
500
t , MINORITY CARRIER LIFETIME (ps)
CT, TOTAL CAPACITANCE (pF)
MMBD330T1
f = 1.0 MHz
2.4
2.0
1.6
1.2
0.8
0.4
0
MMBD330T1
400
KRAKAUER METHOD
300
200
100
0
0
3.0
6.0
9.0
12
15
18
21
VR, REVERSE VOLTAGE (VOLTS)
24
27
30
0
Figure 1. Total Capacitance
30
50
70
40
60
IF, FORWARD CURRENT (mA)
20
80
90
100
Figure 2. Minority Carrier Lifetime
10
100
MMBD330T1
IF, FORWARD CURRENT (mA)
MMBD330T1
IR, REVERSE LEAKAGE (m A)
10
TA = 100C
1.0
TA = 75C
0.1
TA = 85C
1.0
TA = 25C
0.01
TA = -40C
10
TA = 25C
0.1
0.001
0
6.0
12
18
VR, REVERSE VOLTAGE (VOLTS)
24
30
0.2
Figure 3. Reverse Leakage
0.4
0.6
0.8
VF, FORWARD VOLTAGE (VOLTS)
Figure 4. Forward Voltage
http://onsemi.com
3
1.0
1.2
MMBD330T1G, SMMBD330T1G, MMBD770T1G, SMMBD770T1G
TYPICAL CHARACTERISTICS
MMBD770T1G, SMMBD770T1G
2.0
500
t , MINORITY CARRIER LIFETIME (ps)
CT, TOTAL CAPACITANCE (pF)
MMBD770T1
f = 1.0 MHz
1.6
1.2
0.8
0.4
0
MMBD770T1
400
KRAKAUER METHOD
300
200
100
0
0
5.0
10
15
20
25
30
35
VR, REVERSE VOLTAGE (VOLTS)
40
45
50
0
10
Figure 5. Total Capacitance
40
60
30
50
70
IF, FORWARD CURRENT (mA)
80
90
100
Figure 6. Minority Carrier Lifetime
10
100
MMBD770T1
IF, FORWARD CURRENT (mA)
MMBD770T1
IR, REVERSE LEAKAGE (m A)
20
TA = 100C
1.0
TA = 75C
0.1
10
TA = 85C
TA = -40C
1.0
0.01
TA = 25C
0.001
TA = 25C
0.1
0
10
20
30
VR, REVERSE VOLTAGE (VOLTS)
40
50
0.2
Figure 7. Reverse Leakage
0.4
0.8
1.2
VF, FORWARD VOLTAGE (VOLTS)
Figure 8. Forward Voltage
http://onsemi.com
4
1.6
2.0
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419
ISSUE R
DATE 11 OCT 2022
SCALE 4:1
GENERIC
MARKING DIAGRAM
XX MG
G
1
XX
M
G
= Specific Device Code
= Date Code
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
STYLE 1:
CANCELLED
STYLE 6:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
DOCUMENT NUMBER:
DESCRIPTION:
STYLE 2:
PIN 1. ANODE
2. N.C.
3. CATHODE
STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 4:
PIN 1. CATHODE
2. CATHODE
3. ANODE
STYLE 5:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 7:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 8:
PIN 1. GATE
2. SOURCE
3. DRAIN
STYLE 9:
PIN 1. ANODE
2. CATHODE
3. CATHODE-ANODE
STYLE 10:
PIN 1. CATHODE
2. ANODE
3. ANODE-CATHODE
98ASB42819B
SC−70 (SOT−323)
STYLE 11:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
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