MMBF170

DATA SHEET www.onsemi.com Field Effect Transistor N-Channel, Enhancement Mode BS170 DG S TO−92 3 4.825x4.76 CASE 135AN BS170, MMBF170 General Description These N−Channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 500 mA DC. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. D G S TO−92 3 4.83x4.76 LEADFORMED CASE 135AR MMBF170 Features • • • • • High Density Cell Design for Low RDS(ON) Voltage Controlled Small Signal Switch Rugged and Reliable High Saturation Current Capability These are Pb−Free Devices D G S SOT−23 CASE 318−08 Drain Gate Source MARKING DIAGRAM BS170 ALYW 6ZM 1 BS170, 6Z A L YW M = Device Code = Assembly Plant Code = Wafer Lot Number = Assembly Start Week = Date Code ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. © Semiconductor Components Industries, LLC, 2010 April, 2022 − Rev. 7 1 Publication Order Number: MMBF170/D BS170, MMBF170 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter BS170 MMBF170 Unit VDSS Drain−Source Voltage 60 V VDGR Drain−Gate Voltage (RGS ≤ 1 MW) 60 V VGSS Gate−Source Voltage ±20 V ID TJ, TSTG TL Drain Current − Continuous 500 500 − Pulsed 1200 800 Operating and Storage Temperature Range mA − 55 to 150 °C 300 °C Maximum Lead Temperature for Soldering Purposes, 1/16” from Case for 10 Seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol PD RqJA Parameter BS170 MMBF170 Unit Maximum Power Dissipation Derate above 25°C 830 6.6 300 2.4 mW mW/°C Thermal Resistance, Junction to Ambient 150 417 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter Test Condition Type Min Typ Max Unit OFF CHARACTERISTICS Drain−Source Breakdown Voltage VGS = 0 V, ID = 100 mA All 60 − − V IDSS Zero Gate Voltage Drain Current VDS = 25 V, VGS = 0 V All − − 0.5 mA IGSSF Gate − Body Leakage, Forward VGS = 15 V, VDS = 0 V All − − 10 nA V BVDSS ON CHARACTERISTICS (Note 1) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 1 mA All 0.8 2.1 3 RDS(ON) Static Drain−Source On−Resistance VGS = 10 V, ID = 200 mA All − 1.2 5 W Forward Transconductance VDS = 10 V, ID = 200 mA BS170 − 320 − mS MMBF170 − 320 − All − 24 40 pF All − 17 30 pF All − 7 10 pF VDD = 25 V, ID = 200 mA, VGS = 10 V, RGEN = 25 W BS170 − − 10 ns VDD = 25 V, ID = 500 mA, VGS = 10 V, RGEN = 50 W MMBF170 − − 10 VDD = 25 V, ID = 200 mA, VGS = 10 V, RGEN = 25 W BS170 − − 10 VDD = 25 V, ID = 500 mA, VGS = 10 V, RGEN = 50 W MMBF170 − − 10 gFS VDS ≥ 2 VDS(on), ID = 200 mA DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 10 V, VGS = 0 V, f = 1.0 MHz SWITCHING CHARACTERISTICS (Note 1) ton toff Turn−On Time Turn−Off Time ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. www.onsemi.com 2 BS170, MMBF170 TYPICAL ELECTRICAL CHARACTERISTICS Figure 1. On−Region Characteristics Figure 2. On−Resistance Variation with Gate Voltage and Drain Current Figure 3. On−Resistance Variation with Temperature Figure 4. On−Resistance Variation with Drain Current and Temperature Figure 5. Transfer Characteristics Figure 6. Gate Threshold Variation with Temperature www.onsemi.com 3 BS170, MMBF170 TYPICAL ELECTRICAL CHARACTERISTICS (continued) Figure 7. Breakdown Voltage Variation with Temperature Figure 8. Body Diode Forward Voltage Variation with Current and Temperature Figure 9. Capacitance Characteristics Figure 10. Gate Charge Characteristics Figure 11. Switching Test Circuit Figure 12. Switching Waveforms www.onsemi.com 4 BS170, MMBF170 TYPICAL ELECTRICAL CHARACTERISTICS (continued) Figure 13. BS170 Maximum Safe Operating Area Figure 14. MMBF170 Maximum Safe Operating Area Figure 15. TO−92, BS170 Transient Thermal Response Curve Figure 16. SOT−23, MMBF170 Transient Thermal Response Curve www.onsemi.com 5 BS170, MMBF170 ORDERING INFORMATION Package Lead Frame Pin Array Shipping† BS170 TO−92 (Pb−Free) Straight DGS 10000 Units / Bulk BS170−D26Z TO−92 (Pb−Free) Forming DGS 2000 / Tape & Reel BS170−D27Z TO−92 (Pb−Free) Forming DGS 2000 / Tape & Reel BS170−D74Z TO−92 (Pb−Free) Forming DGS 2000 / Ammo BS170−D75Z TO−92 (Pb−Free) Forming DGS 2000 / Ammo MMBF170 SOT−23 (Pb−Free) Part Number 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 6 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−92 3 4.825x4.76 CASE 135AN ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13880G TO−92 3 4.825X4.76 DATE 31 JUL 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−92 3 4.83x4.76 LEADFORMED CASE 135AR ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13879G DATE 30 SEP 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. TO−92 3 4.83X4.76 LEADFORMED PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AS DATE 30 JAN 2018 SCALE 4:1 D 0.25 3 E 1 2 T HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW SEE VIEW C c MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0° INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10° GENERIC MARKING DIAGRAM* END VIEW RECOMMENDED SOLDERING FOOTPRINT XXXMG G 1 3X 2.90 3X XXX = Specific Device Code M = Date Code G = Pb−Free Package 0.90 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS STYLE 1 THRU 5: CANCELLED STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 7: PIN 1. EMITTER 2. BASE 3. COLLECTOR STYLE 9: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE STYLE 11: STYLE 12: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. CATHODE 3. CATHODE−ANODE 3. ANODE STYLE 15: PIN 1. GATE 2. CATHODE 3. ANODE STYLE 16: PIN 1. ANODE 2. CATHODE 3. CATHODE STYLE 17: PIN 1. NO CONNECTION 2. ANODE 3. CATHODE STYLE 18: STYLE 19: STYLE 20: PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE 2. CATHODE 2. ANODE 2. ANODE 3. GATE 3. ANODE 3. CATHODE−ANODE STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 22: PIN 1. RETURN 2. OUTPUT 3. INPUT STYLE 23: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 24: PIN 1. GATE 2. DRAIN 3. SOURCE STYLE 27: PIN 1. CATHODE 2. CATHODE 3. CATHODE STYLE 28: PIN 1. ANODE 2. ANODE 3. ANODE DOCUMENT NUMBER: DESCRIPTION: 98ASB42226B SOT−23 (TO−236) STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE STYLE 13: PIN 1. SOURCE 2. DRAIN 3. GATE STYLE 25: PIN 1. ANODE 2. CATHODE 3. GATE STYLE 14: PIN 1. CATHODE 2. GATE 3. ANODE STYLE 26: PIN 1. CATHODE 2. ANODE 3. NO CONNECTION Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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