MMBF170LT1

MMBF170LT1 Power MOSFET 500 mA, 60 V N-Channel SOT-23 Features • Pb-Free Packages are Available MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage - Continuous - Non-repetitive (tp ≤ 50 ms) Drain Current - Continuous - Pulsed Symbol VDSS VDGS VGS VGSM ID IDM Value 60 60 ± 20 ± 40 0.5 0.8 Unit Vdc Vdc Vdc Vpk Adc http://onsemi.com 500 mA, 60 V RDS(on) = 5 W SOT-23 CASE 318 STYLE 21 N-Channel 3 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board (Note 1.) TA = 25°C Derate above 25°C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature Symbol PD 225 1.8 RqJA TJ, Tstg 556 - 55 to +150 mW mW/°C °C/W °C 1 Max Unit 2 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR- 5 = 1.0  0.75  0.062 in. MARKING DIAGRAM & PIN ASSIGNMENT 3 Drain 6Z MG G Gate 1 2 Source 6Z = Specific Device Code M = Date Code G = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2008 1 April, 2008 - Rev. 6 Publication Order Number: MMBF170LT1/D MMBF170LT1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0, ID = 100 mA) Gate-Body Leakage Current, Forward (VGSF = 15 Vdc, VDS = 0) ON CHARACTERISTICS (Note 1) Gate Threshold Voltage (VDS = VGS, ID = 1.0 mA) Static Drain-Source On-Resistance (VGS = 10 Vdc, ID = 200 mA) On-State Drain Current (VDS = 25 Vdc, VGS = 0) DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 10 Vdc, VGS = 0 V, f = 1.0 MHz) SWITCHING CHARACTERISTICS (Note 1) Turn-On Delay Time Turn-Off Delay Time (VDD = 25 Vdc, ID = 500 mA, Rgen = 50 W) Figure 1 td(on) td(off) 10 10 ns Ciss 60 pF VGS(th) rDS(on) ID(off) 0.8 3.0 5.0 0.5 Vdc W mA V(BR)DSS IGSS 60 10 Vdc nAdc Symbol Min Max Unit 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. ORDERING INFORMATION Device MMBF170LT1 MMBF170LT1G MMBF170LT3 MMBF170LT3G Package SOT-23 (TO-236) SOT-23 (TO-236) (Pb-Free) SOT-23 (TO-236) SOT-23 (TO-236) (Pb-Free) Shipping† 3,000 Tape & Reel 3,000 Tape & Reel 10,000 Tape & Reel 10,000 Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. +25 V ton td(on) 125 W PULSE GENERATOR 50 W Vin 40 pF 20 dB 50 W ATTENUATOR TO SAMPLING SCOPE 50 W INPUT OUTPUT INVERTED Vout INPUT 50% 50 W 1 MW Vin 10% PULSE WIDTH tr 90% 10% 90% 50% td(off) 90% toff tf Vout (Vin AMPLITUDE 10 VOLTS) Figure 1. Switching Test Circuit Figure 2. Switching Waveform http://onsemi.com 2 MMBF170LT1 TYPICAL ELECTRICAL CHARACTERISTICS 1.2 VGS = 10 V ID, DRAIN CURRENT (A) 1.0 0.8 4.2 V 0.6 0.4 0.2 0 0 1 2 3 4 5 6 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 4.0 V 3.8 V 3.6 V 3.4 V 3.2 V 3.0 V 2.8 V 7 TJ = 25°C 1.0 VDS ≥ 10 V ID, DRAIN CURRENT (A) 0.8 5.0 V 4.5 V 0.6 0.4 TJ = 150°C 0.2 TJ = 25°C TJ = -55°C 1 2 3 4 5 6 7 8 0 VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 3. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) Figure 4. Transfer Characteristics VGS, GATE-TO-SOURCE VOLTAGE (V) 8 7 6 5 4 3 2 1 0 0.15 VGS = 10 V 0.25 0.35 0.45 0.55 0.65 0.75 0.85 VGS = 4.5 V TJ = 25°C 15 30 QT 25 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 12.5 10 VDS 7.5 5 2.5 0 0 0.5 1 1.5 Qg, TOTAL GATE CHARGE (nC) Qgs Qgd ID = 0.5 A TJ = 25°C VGS 20 15 10 5 0 2 ID, DRAIN CURRENT (A) Figure 5. On-Resistance vs. Drain Current and Gate Voltage Figure 6. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge 0.24 0.22 IS, SOURCE CURRENT (A) 0.20 0.18 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VGS = 0 V TJ = 25°C VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 7. Diode Forward Voltage vs. Current http://onsemi.com 3 MMBF170LT1 TYPICAL ELECTRICAL CHARACTERISTICS VGS(th), THRESHOLD VOLTAGE (NORMALIZED) r DS(on) , STATIC DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 - 60 - 20 20 60 T, TEMPERATURE (°C) 100 140 VGS = 10 V ID = 200 mA 1.2 1.05 1.1 1.10 1.0 0.95 0.9 0.85 0.8 0.75 0.7 - 60 - 20 20 60 T, TEMPERATURE (°C) 100 140 VDS = VGS ID = 1.0 mA Figure 8. Temperature versus Static Drain-Source On-Resistance Figure 9. Temperature versus Gate Threshold Voltage http://onsemi.com 4 MMBF170LT1 PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AN D SEE VIEW C 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318-01 THRU -07 AND -09 OBSOLETE, NEW STANDARD 318-08. E HE c 1 2 b e q A L A1 L1 VIEW C 0.25 DIM A A1 b c D E e L L1 HE MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm inches SOT-23 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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