MMBF2202PT1G

MMBF2202PT1 Preferred Device Power MOSFET 300 mAmps, 20 Volts P-Channel SC-70/SOT-323 These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal for use in small power management circuitry. Typical applications are dc-dc converters, power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. http://onsemi.com 300 mAMPS, 20 VOLTS RDS(on) = 2.2 W P-Channel 3 Features •Low RDS(on) Provides Higher Efficiency and Extends Battery Life •Miniature SC-70/SOT-323 Surface Mount Package Saves Board Space •AEC Qualified •PPAP Capable •Pb-Free Package is Available 1 2 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain-to-Source Voltage VDSS 20 Vdc Gate-to-Source Voltage - Continuous VGS ±20 Vdc Drain Current - Continuous @ TA = 25°C - Continuous @ TA = 70°C - Pulsed Drain Current (tp ≤ 10 ms) Total Power Dissipation @ TA = 25°C (Note 1) Derate above 25°C 3 Drain 3 mAdc ID ID IDM 300 240 750 1 2 PD 150 1.2 mW mW/°C TJ, Tstg -55 to 150 °C Thermal Resistance, Junction-to-Ambient RqJA 833 °C/W Maximum Lead Temperature for Soldering Purposes, for 10 seconds TL 260 °C Operating and Storage Temperature Range MARKING DIAGRAM AND PIN ASSIGNMENT Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Mounted on G10/FR4 glass epoxy board using minimum recommended footprint. P3 MG G SC-70/SOT-323 CASE 419 STYLE 8 Gate 1 2 Source P3 = Specific Device Code M = Date Code* G = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping† MMBF2202PT1 SC-70/ SOT-323 3000 Tape & Reel MMBF2202PT1G SC-70/ SOT-323 (Pb-Free) 3000 Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2007 October, 2007 - Rev. 6 1 Publication Order Number: MMBF2202PT1/D MMBF2202PT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 20 - - Vdc - - 1.0 10 OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (VGS = 0 Vdc, ID = 10 mA) mAdc Zero Gate Voltage Drain Current (VDS = 16 Vdc, VGS = 0 Vdc) (VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS Gate-Body Leakage Current (VGS = ±20 Vdc, VDS = 0) IGSS - - ±100 nAdc Gate Threshold Voltage (VDS = VGS, ID = 250 mAdc) VGS(th) 1.0 1.7 2.4 Vdc Static Drain-to-Source On-Resistance (VGS = 10 Vdc, ID = 200 mAdc) (VGS = 4.5 Vdc, ID = 50 mAdc) rDS(on) - 1.5 2.0 2.2 3.5 gFS - 600 - mMhos pF ON CHARACTERISTICS (Note 2) Forward Transconductance (VDS = 10 Vdc, ID = 200 mAdc) W DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 5.0 V) Ciss - 50 - Output Capacitance (VDS = 5.0 V) Coss - 45 - Transfer Capacitance (VDG = 5.0 V) Crss - 20 - td(on) - 2.5 - tr - 1.0 - td(off) - 16 - SWITCHING CHARACTERISTICS (Note 3) Turn-On Delay Time (VDD = -15 Vdc, RL = 75 W, ID = 200 mAdc, VGEN = -10 V, RG = 6.0 W) Rise Time Turn-Off Delay Time Fall Time ns tf - 8.0 - QT - 2700 - pC IS - - 0.3 A Pulsed Current ISM - - 0.75 Forward Voltage (Note 3) VSD - 1.5 - Gate Charge (See Figure 5) (VDS = 16 V, VGS = 10 V, ID = 200 mA) SOURCE-DRAIN DIODE CHARACTERISTICS Continuous Current V 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperature. TYPICAL CHARACTERISTICS 4.0 8 rDS(on) , ON RESISTANCE (OHMS) rDS(on) , ON RESISTANCE (OHMS) 10 ID = 200 mA 6 4 2 0 0 1 2 3 4 5 6 7 8 9 3.5 3.0 2.5 2.0 VGS = 10 V ID = 200 mA 1.5 1.0 0.5 0 10 VGS = 4.5 V ID = 50 mA -40 -20 0 20 40 60 80 100 120 140 160 VGS, GATE-SOURCE VOLTAGE (VOLTS) TEMPERATURE (°C) Figure 1. On Resistance versus Gate-Source Voltage Figure 2. On Resistance versus Temperature http://onsemi.com 2 MMBF2202PT1 TYPICAL CHARACTERISTICS 1.0 0.9 5 4 I D, DRAIN CURRENT (AMPS) RDS(on) , ON RESISTANCE (OHMS) 6 VGS = 4.5 V 3 VGS = 10 V 2 1 0.8 0.7 -55 0.6 0.5 150 25 0.4 0.3 0.2 0.1 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 0.8 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS, GATE-SOURCE VOLTAGE (VOLTS) Figure 3. On Resistance versus Drain Current Figure 4. Transfer Characteristics 5.5 6.0 9 10 ID(on), DRAIN CURRENT (AMPS) 0.8 25° 0.1 150° 0.01 VGS = 5 V 0.7 0.6 VGS = 4.5 V 0.5 VGS = 4 V 0.4 0.3 VGS = 3.5 V 0.2 VGS = 3 V 0.1 0 0.5 1.0 1.5 2.0 0 2.5 0 1 2 3 4 5 6 7 8 VSD, SOURCE-DRAIN FORWARD VOLTAGE (VOLTS) VDS, DRAIN-SOURCE VOLTAGE (VOLTS) Figure 5. Source-Drain Forward Voltage Figure 6. On Region Characteristics 50 45 VGS = 0 V f = 1 MHz 40 C, CAPACITANCE (pF) 0.001 4.5 5.0 ID, DRAIN CURRENT (AMPS) 1 IS , SOURCE CURRENT (AMPS) 0 35 30 25 20 Ciss 15 Coss 10 5 0 Crss 0 2 4 6 8 10 12 14 16 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation http://onsemi.com 3 18 20 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SC−70 (SOT−323) CASE 419 ISSUE R DATE 11 OCT 2022 SCALE 4:1 GENERIC MARKING DIAGRAM XX MG G 1 XX M G = Specific Device Code = Date Code = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. STYLE 1: CANCELLED STYLE 6: PIN 1. EMITTER 2. BASE 3. COLLECTOR DOCUMENT NUMBER: DESCRIPTION: STYLE 2: PIN 1. ANODE 2. N.C. 3. CATHODE STYLE 3: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 4: PIN 1. CATHODE 2. CATHODE 3. ANODE STYLE 5: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 7: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 8: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 9: PIN 1. ANODE 2. CATHODE 3. CATHODE-ANODE STYLE 10: PIN 1. CATHODE 2. ANODE 3. ANODE-CATHODE 98ASB42819B SC−70 (SOT−323) STYLE 11: PIN 1. CATHODE 2. CATHODE 3. CATHODE Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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