MMBF4093

DATA SHEET www.onsemi.com Switch, N-Chanel G MMBF4093 S D Features • This Device is Designed for Low Level Analog Switching • • Applications, Sample and Hold Circuits and Chopper Stabilized Amplifiers. Sourced from Process 51. This is a Pb−Free and a Halide Free Device SOT−23 CASE 318−08 Note: Source & Drain are interchangeable MARKING DIAGRAM ABSOLUTE MAXIMUM RATINGS (Note 1), (Note 2) 61L M G G (TA = 25°C unless otherwise noted) Parameter Symbol Value Unit VDG Drain−Gate Voltage 40 V VGS Gate−Source Voltage −40 V IGF Forward Gate Current 50 mA −55 to + 150 °C TJ, TSTG Operating and Storage Junction Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady−state limits. onsemi should be consulted on applications involving pulsed or low−duty cycle operations. THERMAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol PD RqJA Max Unit Total Device Dissipation 350 mW Derate above 25°C 2.8 mW/°C Thermal Resistance, Junction to Ambient (Note 3) 357 °C/W 3. Device mounted on FR−4 PCB 1.6” © Semiconductor Components Industries, LLC, 2000 July, 2022 − Rev. 2 1.6” 1 61L = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† MMBF4093 SOT−23 (Pb−Free) 3000 / Tape and Real †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 0.06”. 1 Publication Order Number: PN4093/D MMBF4093 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Max Unit OFF CHARACTERISTICS V(BR)GSS Gate−Source Breakdown Voltage IG = 1 mA, VDS = 0 −40 − V VGS(off) Gate−Source Cut−Off Voltage VDS = 20 V, ID = 1 nA −1.0 −5.0 V IDGO Drain−Gate Leakage Current VDG = 20 V, IS = 0 VDG = 20 V, IS = 0, TA = 150°C − − −200 −400 pA nA ID(off) Drain Cutoff Leakage Current VDS = 20 V, VGS = −6 V VDS = 20 V, VGS = −6 V, TA = 150°C − − 200 400 pA nA Zero−Gate Voltage Drain Current (Note 4) VDS = 20 V, IGS = 0 8 − mA VDS(on) Drain−Source On Voltage ID = 2.5 mA, VGS = 0 − 0.2 V rDS(on) Drain−Source On Resistance ID = 1 mA, VGS = 0 − 80 W Drain−Source On Resistance VDS = VGS = 0, f = 1 kHz − 80 W Ciss Input Capacitance VDS = 20 V, VGS = 0 V, f = 1.0 MHz − 16 pF Crss Reverse Transfer Capacitance VDS = −20 V, f = 1.0 MHz − 5 pF ON CHARACTERISTICS IDSS SMALL SIGNAL CHARACTERISTICS rDS(on) SWITCHING CHARACTERISTICS tOn Turn−On Time ID(on) = 3.0 mA − 60 ns tOff Turn−Off Time VGS(off) = 3.0 V − 80 ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 1%. www.onsemi.com 2 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AS DATE 30 JAN 2018 SCALE 4:1 D 0.25 3 E 1 2 T HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW SEE VIEW C c MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0° INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10° GENERIC MARKING DIAGRAM* END VIEW RECOMMENDED SOLDERING FOOTPRINT XXXMG G 1 3X 2.90 3X XXX = Specific Device Code M = Date Code G = Pb−Free Package 0.90 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS STYLE 1 THRU 5: CANCELLED STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 7: PIN 1. EMITTER 2. BASE 3. COLLECTOR STYLE 9: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE STYLE 11: STYLE 12: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. CATHODE 3. CATHODE−ANODE 3. ANODE STYLE 15: PIN 1. GATE 2. CATHODE 3. ANODE STYLE 16: PIN 1. ANODE 2. CATHODE 3. CATHODE STYLE 17: PIN 1. NO CONNECTION 2. ANODE 3. CATHODE STYLE 18: STYLE 19: STYLE 20: PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE 2. CATHODE 2. ANODE 2. ANODE 3. GATE 3. ANODE 3. CATHODE−ANODE STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 22: PIN 1. RETURN 2. OUTPUT 3. INPUT STYLE 23: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 24: PIN 1. GATE 2. DRAIN 3. SOURCE STYLE 27: PIN 1. CATHODE 2. CATHODE 3. CATHODE STYLE 28: PIN 1. ANODE 2. ANODE 3. ANODE DOCUMENT NUMBER: DESCRIPTION: 98ASB42226B SOT−23 (TO−236) STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE STYLE 13: PIN 1. SOURCE 2. DRAIN 3. GATE STYLE 25: PIN 1. ANODE 2. CATHODE 3. GATE STYLE 14: PIN 1. CATHODE 2. GATE 3. ANODE STYLE 26: PIN 1. CATHODE 2. ANODE 3. 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