MMBF4416LT1

MMBF4416LT1 Preferred Device JFET VHF/UHF Amplifier Transistor N−Channel Features http://onsemi.com 2 SOURCE • Pb−Free Package is Available MAXIMUM RATINGS Rating Drain−Source Voltage Drain−Gate Voltage Gate−Source Voltage Gate Current Symbol VDS VDG VGS IG Value 30 30 30 10 Unit Vdc Vdc Vdc mAdc 3 Symbol PD 225 1.8 RqJA TJ, Tstg 556 −55 to +150 mW mW/°C °C/W °C Max Unit 1 2 SOT−23 (TO−236) CASE 318 STYLE 10 1 DRAIN 3 GATE THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature MARKING DIAGRAM Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−5 = 1.0 x 0.75 x 0.062 in. 1 M6A M G G M6A = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device MMBF4416LT1 MMBF4416LT1G Package SOT−23 Shipping † 3,000 / Tape & Reel SOT−23 3,000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006 1 February, 2006 − Rev. 3 Publication Order Number: MMBF4416LT1/D MMBF4416LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Gate−Source Breakdown Voltage (IG = 1.0 mAdc, VDS = 0) Gate Reverse Current (VGS = 20 Vdc, VDS = 0) (VGS = 20 Vdc, VDS = 0, TA = 150°C) V(BR)GSS IGSS VGS(off) VGS 30 − − − −1.0 − 1.0 200 −6.0 −5.5 Vdc nAdc Vdc Vdc Symbol Min Max Unit Gate Source Cutoff Voltage (ID = 1.0 nAdc, VDS = 15 Vdc) Gate Source Voltage (ID = 0.5 mAdc, VDS = 15 Vdc) ON CHARACTERISTICS Zero−Gate−Voltage Drain Current (VGS = 15 Vdc, VGS = 0) Gate−Source Forward Voltage (IG = 1.0 mAdc, VDS = 0) SMALL− SIGNAL CHARACTERISTICS Forward Transfer Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) Output Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 15 Vdc, VGS = 0, f = 10 MHz) Output Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) IDSS VGS(f) 5.0 − 15 1.0 mAdc Vdc mmhos mmhos pF pF pF |Yfs| |yos| Ciss Crss Coss 4500 − − − − 7500 50 4.0 0.8 2.0 COMMON SOURCE CHARACTERISTICS ADMITTANCE PARAMETERS (VDS = 15 Vdc, Tchannel = 25°C) grs , REVERSE TRANSADMITTANCE (mmhos) brs , REVERSE SUSCEPTANCE (mmhos) 30 20 10 7.0 5.0 3.0 2.0 gis @ 0.25 IDSS 1.0 0.7 0.5 0.3 10 20 30 bis @ IDSS 5.0 3.0 2.0 brs @ IDSS 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 grs @ IDSS, 0.25 IDSS 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 0.25 IDSS gis, INPUT CONDUCTANCE (mmhos) bis, INPUT SUSCEPTANCE (mmhos) gis @ IDSS bis @ 0.25 IDSS 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 Figure 1. Input Admittance (yis) gfs, FORWARD TRANSCONDUCTANCE (mmhos) |b fs|, FORWARD SUSCEPTANCE (mmhos) 20 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 |bfs| @ IDSS |bfs| @ 0.25 IDSS gos, OUTPUT ADMITTANCE (mhos) bos, OUTPUT SUSCEPTANCE (mhos) 10 5.0 2.0 1.0 0.5 0.2 0.1 0.05 0.02 0.01 10 Figure 2. Reverse Transfer Admittance (yrs) gfs @ IDSS gfs @ 0.25 IDSS bos @ IDSS and 0.25 IDSS gos @ IDSS gos @ 0.25 IDSS 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 Figure 3. Forward Transadmittance (yfs) http://onsemi.com 2 Figure 4. Output Admittance (yos) MMBF4416LT1 COMMON SOURCE CHARACTERISTICS S−PARAMETERS (VDS = 15 Vdc, Tchannel = 25°C, Data Points in MHz) 30° 40° 20° 10° 0° 1.0 350° 100 100 0.9 200 340° 330° 320° 40° 30° 20° 10° 0° 0.4 350° 340° 330° 320° ID = 0.25 IDSS 200 300 400 300 60° 70° 80° 90° 100° 110° 120° 0.8 ID = IDSS 500 400 600 0.7 500 600 0.6 800 900 700 900 700 800 280° 270° 260° 250° 240° 80° 90° 100° 110° 120° 290° 70° 400 300 200 100 0.0 280° 270° 260° 250° 240° 300° 60° 800 600 700 500 0.1 310° 50° 0.3 ID = IDSS, 0.25 IDSS 900 0.2 300° 290° 310° 50° 130° 230° 130° 230° 140° 150° 160° 170° 180° 190° 200° 210° 220° 140° 150° 160° 170° 180° 190° 200° 210° 220° Figure 5. S11s 30° 40° 20° 10° 0° 350° 340° 330° 320° 40° 30° 20° 10° Figure 6. S12s 0° 350° 340° 330° 100 200 ID = 0.25 IDSS 300 1.0 400 100 200 500 300 600 400 700 0.9 500 800 600 ID = IDSS 700 900 800 900 0.8 320° 0.6 50° 0.5 60° 70° 80° 90° 100° 110° 120° 900 800 700 600 500 400 300 ID = IDSS 200 100 0.5 230° 0.6 130° 800 700 600 ID = 0.25 IDSS 500 400 300 200 100 0.4 0.3 900 0.3 0.4 300° 290° 280° 270° 260° 250° 240° 60° 70° 80° 90° 100° 110° 120° 310° 50° 310° 300° 0.7 290° 280° 270° 260° 250° 240° 0.6 130° 230° 140° 150° 160° 170° 180° 190° 200° 210° 220° 140° 150° 160° 170° 180° 190° 200° 210° 220° Figure 7. S21s http://onsemi.com 3 Figure 8. S22s MMBF4416LT1 COMMON GATE CHARACTERISTICS ADMITTANCE PARAMETERS (VDG = 15 Vdc, Tchannel = 25°C) 20 gig, INPUT CONDUCTANCE (mmhos) big, INPUT SUSCEPTANCE (mmhos) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 10 20 30 grg , REVERSE TRANSADMITTANCE (mmhos) brg , REVERSE SUSCEPTANCE (mmhos) 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 gig @ IDSS, 0.25 IDSS 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 0.25 IDSS brg @ IDSS gig @ IDSS grg @ 0.25 IDSS big @ IDSS big @ 0.25 IDSS 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 0.007 0.005 Figure 9. Input Admittance (yig) Figure 10. Reverse Transfer Admittance (yrg) gfg , FORWARD TRANSCONDUCTANCE (mmhos) bfg , FORWARD SUSCEPTANCE (mmhos) gog, OUTPUT ADMITTANCE (mmhos) bog, OUTPUT SUSCEPTANCE (mmhos) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 10 20 30 bfg @ IDSS gfg @ IDSS gfg @ 0.25 IDSS 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 bog @ IDSS, 0.25 IDSS gog @ IDSS brg @ 0.25 IDSS gog @ 0.25 IDSS 0.01 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 Figure 11. Forward Transfer Admittance (yfg) Figure 12. Output Admittance (yog) http://onsemi.com 4 MMBF4416LT1 COMMON GATE CHARACTERISTICS S−PARAMETERS (VDS = 15 Vdc, Tchannel = 25°C, Data Points in MHz) 30° 40° 20° 10° 0° 0.7 100 0.6 50° 100 0.5 60° ID = IDSS 70° 80° 90° 100° 110° 120° 0.4 200 300 400 500 600 900 700 0.3 800 900 ID = 0.25 IDSS 200 300 400 500 600 700 800 290° 280° 270° 260° 250° 240° 70° 80° 90° 100° 110° 120° 600 ID = IDSS 700 800 900 130° 230° 130° 900 0.03 230° 100 500 600 700 800 240° 0.02 ID = 0.25 IDSS 0.01 0.01 290° 280° 270° 260° 250° 0.02 300° 60° 300° 310° 50° 0.03 310° 350° 340° 330° 320° 40° 30° 20° 10° 0° 0.04 350° 340° 330° 320° 0.0 140° 150° 160° 170° 180° 190° 200° 210° 220° 140° 150° 160° 170° 0.04 180° 190° 200° 210° 220° Figure 13. S11g 30° 40° 20° 10° 0° 0.5 100 0.4 50° 0.3 60° 70° 80° 0.1 90° 100° 110° 120° 900 900 260° 250° 240° 100° 110° 120° 0.2 ID = 0.25 IDSS 300° 290° 280° 270° 60° 70° 80° 90° ID = IDSS 100 310° 50° 350° 340° 330° 320° 40° 30° 20° Figure 14. S12g 10° 0° 1.5 1.0 100 0.9 350° 300 200 400 600 800 900 310° 340° 500 700 330° 320° ID = IDSS, 0.25 IDSS 0.8 300° 0.7 290° 280° 270° 260° 250° 240° 0.6 130° 230° 130° 230° 140° 150° 160° 170° 180° 190° 200° 210° 220° 140° 150° 160° 170° 180° 190° 200° 210° 220° Figure 15. S21g http://onsemi.com 5 Figure 16. S22g MMBF4416LT1 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN D 3 SEE VIEW C E 1 2 HE c b e q 0.25 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 A L A1 L1 VIEW C DIM A A1 b c D E e L L1 HE MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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