MMBF4416LT1
Preferred Device
JFET VHF/UHF Amplifier
Transistor
N−Channel
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Features
• Pb−Free Package is Available
2 SOURCE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain−Source Voltage
VDS
30
Vdc
Drain−Gate Voltage
VDG
30
Vdc
Gate−Source Voltage
VGS
30
Vdc
IG
10
mAdc
Symbol
Max
Unit
Gate Current
3
GATE
1 DRAIN
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR−5 Board,
(Note 1) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
3
SOT−23 (TO−236)
CASE 318
STYLE 10
1
PD
225
1.8
mW
mW/°C
RqJA
556
°C/W
TJ, Tstg
−55 to +150
°C
2
MARKING DIAGRAM
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
M6A M G
G
1
M6A = Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping †
MMBF4416LT1
SOT−23
3,000 / Tape & Reel
MMBF4416LT1G
SOT−23 3,000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 3
1
Publication Order Number:
MMBF4416LT1/D
MMBF4416LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
V(BR)GSS
30
−
Vdc
IGSS
−
−
1.0
200
nAdc
VGS(off)
−
−6.0
Vdc
VGS
−1.0
−5.5
Vdc
OFF CHARACTERISTICS
Gate−Source Breakdown Voltage (IG = 1.0 mAdc, VDS = 0)
Gate Reverse Current
(VGS = 20 Vdc, VDS = 0)
(VGS = 20 Vdc, VDS = 0, TA = 150°C)
Gate Source Cutoff Voltage (ID = 1.0 nAdc, VDS = 15 Vdc)
Gate Source Voltage (ID = 0.5 mAdc, VDS = 15 Vdc)
ON CHARACTERISTICS
Zero−Gate−Voltage Drain Current (VGS = 15 Vdc, VGS = 0)
IDSS
5.0
15
mAdc
VGS(f)
−
1.0
Vdc
Forward Transfer Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
|Yfs|
4500
7500
mmhos
Output Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
|yos|
−
50
mmhos
Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Ciss
−
4.0
pF
Reverse Transfer Capacitance (VDS = 15 Vdc, VGS = 0, f = 10 MHz)
Crss
−
0.8
pF
Output Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Coss
−
2.0
pF
Gate−Source Forward Voltage (IG = 1.0 mAdc, VDS = 0)
SMALL− SIGNAL CHARACTERISTICS
COMMON SOURCE CHARACTERISTICS ADMITTANCE PARAMETERS
30
20
grs , REVERSE TRANSADMITTANCE (mmhos)
brs , REVERSE SUSCEPTANCE (mmhos)
gis, INPUT CONDUCTANCE (mmhos)
bis, INPUT SUSCEPTANCE (mmhos)
(VDS = 15 Vdc, Tchannel = 25°C)
bis @ IDSS
10
7.0
5.0
3.0
gis @ IDSS
2.0
gis @ 0.25 IDSS
1.0
0.7
0.5
bis @ 0.25 IDSS
0.3
10
20
30
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000
5.0
3.0
2.0
brs @ IDSS
1.0
0.7
0.5
0.25 IDSS
0.3
0.2
0.1
0.07
0.05
grs @ IDSS, 0.25 IDSS
10
30
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000
Figure 2. Reverse Transfer Admittance (yrs)
20
10
10
7.0
5.0
gos, OUTPUT ADMITTANCE (mhos)
bos, OUTPUT SUSCEPTANCE (mhos)
gfs, FORWARD TRANSCONDUCTANCE (mmhos)
|b fs|, FORWARD SUSCEPTANCE (mmhos)
Figure 1. Input Admittance (yis)
20
gfs @ IDSS
gfs @ 0.25 IDSS
3.0
2.0
1.0
0.7
0.5
|bfs| @ IDSS
|bfs| @ 0.25 IDSS
5.0
bos @ IDSS and 0.25 IDSS
2.0
1.0
0.5
0.2
gos @ IDSS
0.1
0.05
gos @ 0.25 IDSS
0.02
0.3
0.2
0.01
10
20
30
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000
10
Figure 3. Forward Transadmittance (yfs)
20
30
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000
Figure 4. Output Admittance (yos)
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2
MMBF4416LT1
COMMON SOURCE CHARACTERISTICS
S−PARAMETERS
(VDS = 15 Vdc, Tchannel = 25°C, Data Points in MHz)
30°
20°
10°
0°
1.0
40°
350°
340°
330°
320°
40°
310°
50°
20°
10°
310°
900
500
ID = IDSS
800
60°
300°
400
500
0.7
800
90°
900
290°
400
80°
280°
800
700
300°
0.1
500
70°
290°
0.2
700
600
700
600
0.6
320°
ID = IDSS, 0.25 IDSS
600
80°
330°
0.4
300
70°
340°
0.3
400
50°
0.8
350°
300
200
60°
0°
200
100
0.9
30°
ID = 0.25 IDSS
100
300
280°
0.0
200
270°
90°
100°
260°
100°
260°
110°
250°
110°
250°
120°
240°
120°
240°
130°
230°
130°
230°
140°
220°
140°
220°
900
150°
160°
170°
180°
190°
200°
210°
150°
160°
170°
Figure 5. S11s
30°
20°
10°
0°
350°
340°
330°
30°
20°
10°
80°
90°
700
110°
0.4
800
600
100°
210°
0°
350°
340°
330°
100 200
I
=
0.25
IDSS
D
300
1.0
400
100 200
500
300
600
400
700
0.9
500
800
600
ID = IDSS
700
900
800
900
0.8
310°
50°
300°
60°
290°
70°
280°
80°
270°
90°
270°
260°
100°
260°
250°
110°
250°
240°
120°
240°
230°
130°
230°
220°
140°
220°
320°
310°
300°
0.7
290°
900
700
600
200°
40°
0.5
60°
900
190°
320°
0.6
50°
800
180°
Figure 6. S12s
40°
70°
270°
100
500
0.3
ID = 0.25 IDSS
500
0.3
100
400
400
280°
0.6
300
200
0.4
100
0.5
300
120°
ID = IDSS
200
130°
0.6
140°
150°
160°
170°
180°
190°
200°
210°
150°
Figure 7. S21s
160°
170°
180°
190°
Figure 8. S22s
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3
200°
210°
MMBF4416LT1
COMMON GATE CHARACTERISTICS ADMITTANCE PARAMETERS
grg , REVERSE TRANSADMITTANCE (mmhos)
brg , REVERSE SUSCEPTANCE (mmhos)
(VDG = 15 Vdc, Tchannel = 25°C)
gig, INPUT CONDUCTANCE (mmhos)
big, INPUT SUSCEPTANCE (mmhos)
20
10
7.0
5.0
gig @ IDSS
3.0
grg @ 0.25 IDSS
2.0
1.0
0.7
0.5
big @ IDSS
big @ 0.25 IDSS
0.3
0.2
10
20
30
50 70 100
200 300
f, FREQUENCY (MHz)
0.5
0.3
0.1
0.07
0.05
0.25 IDSS
0.03
0.02
0.01
0.007
0.005
500 700 1000
brg @ IDSS
0.2
gig @ IDSS, 0.25 IDSS
10
10
7.0
5.0
gfg @ IDSS
3.0
gfg @ 0.25 IDSS
2.0
1.0
0.7
0.5
bfg @ IDSS
0.3
brg @ 0.25 IDSS
0.2
30
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000
Figure 10. Reverse Transfer Admittance (yrg)
gog, OUTPUT ADMITTANCE (mmhos)
bog, OUTPUT SUSCEPTANCE (mmhos)
gfg , FORWARD TRANSCONDUCTANCE (mmhos)
bfg , FORWARD SUSCEPTANCE (mmhos)
Figure 9. Input Admittance (yig)
20
1.0
0.7
0.5
bog @ IDSS, 0.25 IDSS
0.3
0.2
0.1
0.07
0.05
gog @ IDSS
0.03
0.02
gog @ 0.25 IDSS
0.1
0.01
10
20
30
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000
10
Figure 11. Forward Transfer Admittance (yfg)
20
30
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000
Figure 12. Output Admittance (yog)
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4
MMBF4416LT1
COMMON GATE CHARACTERISTICS
S−PARAMETERS
(VDS = 15 Vdc, Tchannel = 25°C, Data Points in MHz)
30°
20°
10°
0°
350°
340°
330°
30°
0.7
40°
100
310°
50°
300°
60°
290°
70°
280°
80°
0°
350°
340°
330°
0.04
200
300
320°
0.03
400
100
500
200
ID = IDSS
0.4
310°
600
300
0.5
60°
70°
40°
10°
ID = 0.25 IDSS
0.6
50°
320°
20°
0.02
700
400
500
300°
800
600
900
0.01
290°
700
80°
800
0.3
900
90°
90°
270°
100°
ID = IDSS
110°
110°
250°
270°
500
600
100°
260°
280°
0.0
100
700
600
700
260°
ID = 0.25 IDSS
250°
0.01
800
120°
120°
240°
240°
800
0.02
900
130°
130°
230°
230°
900
140°
140°
220°
150°
160°
170°
180°
190°
200°
210°
20°
10°
0°
350°
150°
160°
170°
340°
330°
30°
20°
10°
40°
320°
0°
1.5
1.0
100
100
0.4
190°
350°
300
200
200°
210°
340°
330°
500
320°
400
700
600
800
0.9
ID = IDSS
50°
180°
Figure 14. S12g
0.5
40°
220°
0.04
Figure 13. S11g
30°
0.03
900
310°
50°
300°
60°
290°
70°
280°
80°
270°
90°
270°
100°
260°
100°
260°
110°
250°
110°
250°
120°
240°
120°
240°
130°
230°
130°
230°
140°
220°
140°
220°
100
ID = IDSS, 0.25 IDSS
0.3
0.8
60°
0.2
70°
310°
ID = 0.25 IDSS
80°
0.1
900
90°
300°
0.7
290°
280°
0.6
900
150°
160°
170°
180°
190°
200°
210°
150°
Figure 15. S21g
160°
170°
180°
190°
Figure 16. S22g
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5
200°
210°
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AS
DATE 30 JAN 2018
SCALE 4:1
D
0.25
3
E
1
2
T
HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
DIM
A
A1
b
c
D
E
e
L
L1
HE
T
L
3X b
L1
VIEW C
e
TOP VIEW
A
A1
SIDE VIEW
SEE VIEW C
c
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.14
0.20
2.90
3.04
1.30
1.40
1.90
2.04
0.43
0.55
0.54
0.69
2.40
2.64
−−−
10 °
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0°
INCHES
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10°
GENERIC
MARKING DIAGRAM*
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT
XXXMG
G
1
3X
2.90
3X
XXX = Specific Device Code
M = Date Code
G
= Pb−Free Package
0.90
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
0.95
PITCH
0.80
DIMENSIONS: MILLIMETERS
STYLE 1 THRU 5:
CANCELLED
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 7:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
STYLE 9:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 10:
PIN 1. DRAIN
2. SOURCE
3. GATE
STYLE 11:
STYLE 12:
PIN 1. ANODE
PIN 1. CATHODE
2. CATHODE
2. CATHODE
3. CATHODE−ANODE
3. ANODE
STYLE 15:
PIN 1. GATE
2. CATHODE
3. ANODE
STYLE 16:
PIN 1. ANODE
2. CATHODE
3. CATHODE
STYLE 17:
PIN 1. NO CONNECTION
2. ANODE
3. CATHODE
STYLE 18:
STYLE 19:
STYLE 20:
PIN 1. NO CONNECTION PIN 1. CATHODE
PIN 1. CATHODE
2. CATHODE
2. ANODE
2. ANODE
3. GATE
3. ANODE
3. CATHODE−ANODE
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
STYLE 22:
PIN 1. RETURN
2. OUTPUT
3. INPUT
STYLE 23:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 24:
PIN 1. GATE
2. DRAIN
3. SOURCE
STYLE 27:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
STYLE 28:
PIN 1. ANODE
2. ANODE
3. ANODE
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT−23 (TO−236)
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
STYLE 13:
PIN 1. SOURCE
2. DRAIN
3. GATE
STYLE 25:
PIN 1. ANODE
2. CATHODE
3. GATE
STYLE 14:
PIN 1. CATHODE
2. GATE
3. ANODE
STYLE 26:
PIN 1. CATHODE
2. ANODE
3. NO CONNECTION
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Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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