MMBF5434

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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. MMBF5434 N-Channel Switch Features • This device is designed for digital switching applications where very low on resistance is mandatory. • Sourced from Process 58. 3 2 1 SuperSOT-3 Marking: 61Z 1. Drain 2. Source 3. Gate Ordering Information Part Number Top Mark Package Packing Method MMBF5434 61Z SSOT 3L Tape and Reel Absolute Maximum Ratings(1), (2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit V VDG Drain-Gate Voltage 25 VGS Gate-Source Voltage -25 V IGF Forward Gate Current 10 mA -55 to 150 C TJ, TSTG Operating and Storage Junction Temperature Range Notes: 1. These ratings are based on a maximum junction temperature of 150C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty-cycle operations. © 2003 Fairchild Semiconductor Corporation MMBF5434 Rev. 1.1 www.fairchildsemi.com MMBF5434 — N-Channel Switch April 2016 Values are at TA = 25°C unless otherwise noted. Symbol PD RJA Parameter Max. Unit Total Device Dissipation 350 mW Derate Above 25C 2.8 mW/C Thermal Resistance, Junction-to-Ambient(3) 556 C/W Notes: 3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. Electrical Characteristics Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Max. Unit 200 nA -4.0 V 200 pA Off Characteristics Gate-Source Breakdown Voltage IG = -1 A, VDS = 0 Gate Reverse Current VGS = -15 V, VDS = 0 VGS(off) Gate-Source Cut-Off Voltage VDS = 5 V, ID = 3nA ID(off) Gate-Source Cutoff Voltage VDS = 5.0, VGS = -10 V V(BR)GSS IGSS -25 -1.0 V On Characteristics IDSS rDS(on) Zero-Gate Voltage Drain Current(4) VDS = 15 V, IGS = 0 Drain-Source On Resistance 30 mA VGS = 0, ID = 10 mA 10  Small Signal Characteristics Ciss Input Capacitance VDS = 0, VGS = 10 V, f = 1.0 MHz 30 pF Crss Reverse Transfer Capacitance VDS = 0, VGS = 10 V, f = 1.0 MHz 15 pF Note: 4. Pulse test: pulse width 300 s, duty cycle 2%. © 2003 Fairchild Semiconductor Corporation MMBF5434 Rev. 1.1 www.fairchildsemi.com 2 MMBF5434 — N-Channel Switch Thermal Characteristics Parameter Interactions - DRAIN CURRENT (mA) - 3.0 V 60 40 - 4.0 V T A = 25°C C 20 TYP V GS(off) = - 5.0 V I D - 1.0 V - 5.0 V 0 0 0.4 0.8 1.2 1.6 VDS - DRAIN-SOURCE VOLTAGE (V) r DS @ V DS = 100mV, VGS = 0 50 V GS(off) @ V DS = 5.0V, I r DS 100 5 50 I DSS _ 2 0.1 50 - DRAIN CURRENT (mA) C iss (V DS = 5.0V) 10 D C rss (VDS = 0 ) 獤 T A = 25獤 °C TYP V GS(off) = - 0.7 V 40 30 V GS = 0 V 20 - 0.1 V - 0.2 V - 0.3 V - 0.4 V - 0.5 V 10 I C ts (C rs ) - CAPACITANCE (pF) 10 _ _ _ _ 0.5 1 5 10 VGS (OFF) - GATE CUTOFF VOLTAGE (V) Figure 2. Parameter Interactions f = 0.1 - 1.0 MHz 0 -4 -8 -12 -16 V GS - GATE-SOURCE VOLTAGE (V) 0 -20 0 20 10 e n - NOISE VOLTAGE (nV / √ Hz) 100 50 V GS(off) @ 5.0V, 10 μA r DS = r DS V GS 1 -________ V GS(off) 5 2 1 0 0.2 0.4 0.6 0.8 1 VGS /VGS(off)- NORMALIZED GATE-SOURCE VOLTAGE (V) 100 50 5 V DG = 10V BW = 6.0 Hz @ f = 10 Hz, 100 Hz = 0.21 @ f ≥ 1.0 kHz 10 5 I D = 1.0 mA I D = 10 mA 1 0.01 0.03 Figure 5. Normalized Drain Resistance vs. Bias Voltage © 2003 Fairchild Semiconductor Corporation MMBF5434 Rev. 1.1 1 2 3 4 VDS - DRAIN-SOURCE VOLTAGE (V) Figure 4. Common Drain-Source Figure 3. Common Drain-Source r DS - NORMALIZED RESISTANCE 500 = 3.0 nA 10 Figure 1. Common Drain-Source 100 D DRAIN CURRENT (mA) 80 1,000 I DSS @ V DS = 5.0V, V GS = 0 PULSED DSS - - 2.0 V V GS = 0 V 100 I r DS - DRAIN "ON" RESISTANCE () Common Drain-Source 100 0.1 0.5 1 2 10 f - FREQUENCY (kHz) 100 Figure 6. Noise Voltage vs. Frequency www.fairchildsemi.com 3 MMBF5434 — N-Channel Switch Typical Performance Characteristics Switching Turn-On Time vs Drain Current Switching Turn-On Time vs Gate-Source Cutoff Voltage 50 TA = 25°C C t OFF - TURN-OFF TIME (ns) t ON ON - TURN-ON TIME (ns) 10 VDD = 1.5V 8 V GS(off) = - 12V 6 I D = 30 mA 4 I D = 10 mA 2 0 0 V GS(off) = - 3.0V 獤 125獤 °C 獤 °C 125獤 5 獤 °C 25獤 °獤 C - 55獤 V GS(off) = - 5.0V 25獤 °獤 C 1 ID 10 - DRAIN CURRENT (mA) 獤 T A = 25獤 °C 獤 T A = - 55獤 °C V DG = 10V 獤 °C T A = 25獤 f = 1.0 kHz 獤 °C T A = 125獤 100 5 10 15 20 I D - DRAIN CURRENT (mA) 25 100 V DG = 5.0V 10V V GS(off) - 4.0V 5.0V 15V 20V 10V 10 15V 5.0V 10V 20V - 2.0V 1 0.1 15V 20V 獤 T A = 25獤 °C f = 1.0 kHz - 1.0V 1 I D - DRAIN CURRENT (mA) 10 700 600 V GS(off) = - 1.0V V GS(off) = - 3.0V V GS(off) = - 5.0V 1 I D - DRAIN CURRENT (mA) 10 500 T O -9 2 S u p e rS O T -3 400 300 200 100 0 0 25 50 75 100 125 150 o TEM PERATURE ( C) Figure 11. Transconductance vs. Drain Current © 2003 Fairchild Semiconductor Corporation MMBF5434 Rev. 1.1 0 Figure 10. Output Conductance vs. Drain Current 10 1 0.1 V GS(off) = - 12V PD - POWER DISSIPATION(mW) 100 TA = 25°C C VDD = 1.5V 10 g os - OUTPUT CONDUCTANCE ( μ mhos) Ω) r DS - DRAIN "ON" RESISTANCE (Ω V GS = 0 Figure 9. On Resistance vs. Drain Current g fs - TRANSCONDUCTANCE (mmhos) V GS(off) = - 3.5V Figure 8. Switching Turn-On Time vs. Drain Current 100 10 V GS(off) = - 5.5V 20 -2 -4 -6 -8 -10 VGS(off) GS(off) - GATE-SOURCE CUTOFF VOLTAGE (V) 50 V GS(off) = - 8.5V 30 0 Figure 7. Switching Turn-On Time vs. Gate-Source Cut-Off Voltage 1 40 Figure 12. Power Dissipation vs. Ambient Temperature www.fairchildsemi.com 4 MMBF5434 — N-Channel Switch Typical Performance Characteristics (Continued) 2.92±0.12 0.95 A 3 1.40 B 1.40±0.12 1 2.20 2 0.508 0.382 (0.29) 0.10 0.95 M 1.00 A B 1.90 1.90 LAND PATTERN RECOMMENDATION SEE DETAIL A 1.12 MAX 0.10 0.00 (0.94) 0.10 C M C 2.51±0.20 GAGE PLANE NOTES: UNLESS OTHERWISE SPECIFIED 0.178 0.102 0.20 0.43 0.33 (0.56) SCALE: 50:1 SEATING PLANE A) NO JEDEC REFERENCE AS OF AUGUST 2003 B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR EXTRUSIONS. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M - 2009. E) DRAWING FILE NAME: MKT-MA03BREV3 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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