MMBF5457

DATA SHEET www.onsemi.com N-Channel General Purpose Amplifier G D S MMBF5457 NOTE: Source & Drain are interchangeable This device is a low level audio amplifier and switching transistors, and can be used for analog switching applications. Sourced from Process 55. SOT−23 CASE 318−08 ABSOLUTE MAXIMUM RATINGS* (TA = 25°C unless otherwise noted) Symbol Rating Value Unit VDG Drain−Gate Voltage 25 V VGS Gate−Source Voltage −25 V IGF Forward Gate Current 10 mA −55 to +150 °C TJ, Tstg Operating and Storage Junction Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. *These rating are limiting values above which the serviceability of any semiconductor device may be impaired. 1. These rating are based on a maximum junction temperature of 150°C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. THERMAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Max Symbol PD Characteristic *MMBF5457 Unit 350 2.8 mW mW/°C Total Device Dissipation Derate above 25°C RqJC Thermal Resistance, Junction to Case − °C/W RqJA Thermal Resistance, Junction to Ambient 556 °C/W MARKING DIAGRAM 6DM 1 6D = Device Code M = Date Code ORDERING INFORMATION Device MMBF5457 Package Shipping† SOT−23 (Pb−Free, Halide Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. *Device mounted on FR−4 PCB 1.6” x 1.6” x 0.06”. © Semiconductor Components Industries, LLC, 1997 January, 2023 − Rev. 1 1 Publication Order Number: MMBF5457/D MMBF5457 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter Test Condition Min Typ Max Unit −25 − − V − − − − −1.0 −200 nA nA OFF CHARACTERISTICS V(BR)GSS IGSS VGS(off) VGS Gate−Source Breakdown Voltage IG = 10 mA, VDS = 0 Gate Reverse Current VGS = −15 V, VDS = 0 VGS = −15 V, VDS = 0, TA = 100°C Gate−Source Cutoff Voltage VDS = 15 V, ID = 10 nA −0.5 − −6.0 V Gate−Source Voltage VDS = 15 V, ID = 100 mA − −2.5 − V 1.0 3.0 5.0 mA ON CHARACTERISTICS IDSS Zero−Gate Voltage Drain Current (Note 3) VDS = 15 V, VGS = 0 SMALL SIGNAL CHARACTERISTICS gfs Forward Transfer Conductance (Note 3) VDS = 15 V, VGS = 0, f = 1.0 kHz 1000 − 5000 mmhos gos Output Conductance (Note 3) VDS = 15 V, VGS = 0, f = 1.0 kHz − 10 50 mmhos Ciss Input Capacitance VDS = 15 V, VGS = 0, f = 1.0 MHz − 4.5 7.0 pF Crss Reverse Transfer Capacitance VDS = 15 V, VGS = 0, f = 1.0 MHz − 1.5 3.0 pF NF Noise Figure VDS = 15 V, VGS = 0, f = 1.0 kHz, RG = 1.0 MW, BW = 1.0 Hz − − 3.0 dB Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. www.onsemi.com 2 MMBF5457 10 20 8 16 6 4 2 −1 −2 0 −1 −2 −3 −5 −4 VGS, GATE SOURCE VOLTAGE (V) VGS, GATE SOURCE VOLTAGE (V) Figure 1. Transfer Characteristics Figure 2. Transfer Characteristics gfs, TRANSCONDUCTANCE (mmhos) 10 8 6 4 2 0 −1 −2 −3 −4 6 4 2 0 0 −1 −2 −3 VGS, GATE SOURCE VOLTAGE (V) VGS, GATE SOURCE VOLTAGE (V) Figure 3. Transfer Characteristics Figure 4. Transfer Characteristics 4 3 2 1 0 8 −5 5 ID, DRAIN CURRENT (mA) 4 −3 IDSS, DRAIN SATURATION CURRENT (mA) gfs, TRANSCONDUCTANCE (mmhos) gfs, TRANSCONDUCTANCE (mmhos) 0 0 8 0 0 0 12 1 2 3 4 5 100 10 10 1 1 −1 0.1 −2 −5 −10 VDS, DRAIN SOURCE VOLTAGE (V) VGS(OFF), GATE CUTOFF VOLTAGE (V) Figure 5. Common Drain−Source Figure 6. Parameter Interaction www.onsemi.com 3 IDS, DRAIN ON RESISTANCE (kW) ID, DRAIN CURRENT (mA) ID, DRAIN CURRENT (mA) TYPICAL CHARACTERISTICS MMBF5457 100 gfs, TRANSCONDUCTANCE (mmhos) gos, OUTPUT CONDUCTANCE (mmhos) TYPICAL CHARACTERISTICS (CONTINUED) 10 1 0.1 1 10 10 1 0.1 0.01 ID, DRAIN CURRENT (mA) en, NOISE VOLTAGE (nV/√Hz) 100 100 10 −75 −25 25 75 125 10 1 175 0.01 0.1 TA, AMBIENT TEMPERATURE (°C) 10 1 100 f, FREQUENCY (kHz) Figure 9. Channel Resistance vs. Temperature Figure 10. Noise Voltage vs. Frequency 10 10k Ciss/Crss, CAPACITANCE (pF) IG/IGSS, GATE LEAKAGE CURRENT (pA) 10 Figure 8. Transconductance vs. Drain Current 1k 1k 100 10 1 1 ID, DRAIN CURRENT (mA) Figure 7. Output Conductance vs. Drain Current rDS, DRAIN ON RESISTANCE (W) 0.1 5 1 0 10 20 30 40 50 VDG, DRAIN GATE VOLTAGE (V) 0 −2 −4 −6 −8 −10 VGS, GATE SOURCE VOLTAGE (V) Figure 11. Leakage Current vs. Voltage Figure 12. Capacitance vs. Voltage www.onsemi.com 4 MMBF5457 PD, POWER DISSIPATION (mW) TYPICAL CHARACTERISTICS (CONTINUED) 700 600 500 SOT−23 400 300 200 100 0 0 25 50 75 100 125 150 TEMPERATURE (°C) Figure 13. Power Dissipation vs. Ambient Temperature www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AS DATE 30 JAN 2018 SCALE 4:1 D 0.25 3 E 1 2 T HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW SEE VIEW C c MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0° INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10° GENERIC MARKING DIAGRAM* END VIEW RECOMMENDED SOLDERING FOOTPRINT XXXMG G 1 3X 2.90 3X XXX = Specific Device Code M = Date Code G = Pb−Free Package 0.90 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS STYLE 1 THRU 5: CANCELLED STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 7: PIN 1. EMITTER 2. BASE 3. COLLECTOR STYLE 9: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE STYLE 11: STYLE 12: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. CATHODE 3. CATHODE−ANODE 3. ANODE STYLE 15: PIN 1. GATE 2. CATHODE 3. ANODE STYLE 16: PIN 1. ANODE 2. CATHODE 3. CATHODE STYLE 17: PIN 1. NO CONNECTION 2. ANODE 3. CATHODE STYLE 18: STYLE 19: STYLE 20: PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE 2. CATHODE 2. ANODE 2. ANODE 3. GATE 3. ANODE 3. CATHODE−ANODE STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 22: PIN 1. RETURN 2. OUTPUT 3. INPUT STYLE 23: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 24: PIN 1. GATE 2. DRAIN 3. SOURCE STYLE 27: PIN 1. CATHODE 2. CATHODE 3. CATHODE STYLE 28: PIN 1. ANODE 2. ANODE 3. ANODE DOCUMENT NUMBER: DESCRIPTION: 98ASB42226B SOT−23 (TO−236) STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE STYLE 13: PIN 1. SOURCE 2. DRAIN 3. GATE STYLE 25: PIN 1. ANODE 2. CATHODE 3. GATE STYLE 14: PIN 1. CATHODE 2. GATE 3. ANODE STYLE 26: PIN 1. CATHODE 2. ANODE 3. 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