MMBF5457LT1

MMBF5457LT1 Preferred Device JFET − General Purpose Transistor N−Channel Features http://onsemi.com • Pb−Free Package is Available 2 SOURCE MAXIMUM RATINGS Rating Drain−Source Voltage Drain−Gate Voltage Reverse Gate−Source Voltage Gate Current Symbol VDS VDG VGS(r) IG Value 25 25 −25 10 Unit Vdc Vdc Vdc mAdc 3 GATE 1 DRAIN THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board (Note 1) (TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA TJ, Tstg 556 −55 to +150 Unit 1 3 mW mW/°C °C/W °C SOT−23 (TO−236) CASE 318 STYLE 10 2 MARKING DIAGRAM Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−5 = 1.0  0.75  0.062 in. 6MG G 1 6 = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device MMBF5457LT1 MMBF5457LT1G Package SOT−23 SOT−23 (Pb−Free) Shipping † 3000/Tape & Reel 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2005 1 July, 2005 − Rev. 4 Publication Order Number: MMBF5457LT1/D MMBF5457LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Gate−Source Breakdown Voltage (IG = 10 mAdc, VDS = 0) Gate Reverse Current (VGS = 15 Vdc, VDS = 0) (VGS = 15 Vdc, VDS = 0, TA = 100°C) Gate Source Cutoff Voltage (VDS = 15 Vdc, ID = 10 nAdc) Gate Source Voltage (VDS = 15 Vdc, ID = 100 mAdc) ON CHARACTERISTICS Zero−Gate−Voltage Drain Current (Note 2) (VDS = 15 Vdc, VGS = 0) SMALL−SIGNAL CHARACTERISTICS Forward Transfer Admittance (Note 2) (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) Output Common Source Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) 2. Pulse Test: Pulse Width ≤ 630 ms, Duty Cycle ≤ 10%. |Yfs| |yos| Ciss Crss 1000 − − − − 10 4.5 1.5 5000 50 7.0 3.0 mmhos mmhos pF pF IDSS 1.0 − 5.0 mAdc V(BR)GSS IGSS − − VGS(off) VGS −0.5 − − − − −2.5 −1.0 −200 −6.0 − Vdc Vdc −25 − − Vdc nAdc Symbol Min Typ Max Unit http://onsemi.com 2 MMBF5457LT1 TYPICAL CHARACTERISTICS 14 12 NF, NOISE FIGURE (dB) 10 8 6 4 2 0 0.001 0.01 0.1 1.0 RS, SOURCE RESISTANCE (Megohms) 10 VDS = 15 V VGS = 0 f = 1 kHz Figure 1. Noise Figure versus Source Resistance 1.2 1.0 0.8 0.6 0.4 0.2 0 −0.2 V 1.2 VGS = 0 V I D , DRAIN CURRENT (mA) 1.0 0.8 VDS = 15 V 0.6 0.4 0.2 0 −1.2 VGS(off) ^ −1.2 V VGS(off) ^ −1.2 V I D , DRAIN CURRENT (mA) −0.4 V −0.6 V −0.8 V −1.0 V 0 5 10 15 20 VDS, DRAIN−SOURCE VOLTAGE (VOLTS) 25 −0.8 −0.4 VGS, GATE−SOURCE VOLTAGE (VOLTS) 0 Figure 2. Typical Drain Characteristics Figure 3. Common Source Transfer Characteristics http://onsemi.com 3 MMBF5457LT1 TYPICAL CHARACTERISTICS 5 VGS = 0 V I D , DRAIN CURRENT (mA) I D , DRAIN CURRENT (mA) 4 VGS(off) ^ −3.5 V 3 −1 V 5 VGS(off) ^ −3.5 V 4 3 VDS = 15 V 2 2 −2 V −3 V 0 0 10 15 20 VDS, DRAIN−SOURCE VOLTAGE (VOLTS) 5 25 1 1 0 −5 −3 −2 −1 −4 VGS, GATE−SOURCE VOLTAGE (VOLTS) 0 Figure 4. Typical Drain Characteristics Figure 5. Common Source Transfer Characteristics 10 10 VGS = 0 V I D , DRAIN CURRENT (mA) I D , DRAIN CURRENT (mA) 8 VGS(off) ^ −5.8 V −1 V 6 −2 V 4 −3 V 2 0 0 5 10 15 20 VDS, DRAIN−SOURCE VOLTAGE (VOLTS) 25 −4 V −5 V VGS(off) ^ −5.8 V 8 6 VDS = 15 V 4 2 0 −7 −6 −5 −4 −3 −2 −1 VGS, GATE − SOURCE VOLTAGE (VOLTS) 0 Figure 6. Typical Drain Characteristics Figure 7. Common Source Transfer Characteristics Note: Graphical data is presented for dc conditions. Tabular data is given for pulsed conditions (Pulse Width = 630 ms, Duty Cycle = 10%). Under dc conditions, self heating in higher IDSS units reduces IDSS. http://onsemi.com 4 MMBF5457LT1 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AL D 3 1 2 E HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. DIM A A1 b c D E e L HE MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.029 0.104 e A b A1 L C STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 MMBF5457LT1 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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