MMBFJ108

J109 / MMBFJ108 — N-Channel Switch J109 / MMBFJ108 N-Channel Switch Features • This device is designed for digital switching applications where very low on resistance is mandatory. • Sourced from process 58 3 2 1 TO-92 1 SuperSOT-3 Marking: I8 1. Drain 2. Source 3. Gate 1. Drain 2. Source 3. Gate Figure 1. J109 Device Package Figure 2. MMBFJ108 Device Package Ordering Information Part Number Top Mark Package Packing Method J109 J109 TO-92 3L Bulk J109-D26Z J109 TO-92 3L Tape and Reel MMBFJ108 I8 SSOT 3L Tape and Reel Absolute Maximum Ratings(1), (2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit VDG Drain-Gate Voltage 25 V VGS Gate-Source Voltage -25 V IGF Forward Gate Current 10 mA -55 to 150 °C TJ, TSTG Operating and Storage Junction Temperature Range Notes: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or lowduty-cycle operations. © 2002 Semiconductor Components Industries, LLC. October-2017, Rev. 3 Publication Order Number: J109/D Values are at TA = 25°C unless otherwise noted. Symbol PD Max. Parameter J109 (3) MMBFJ108(4) Unit Total Device Dissipation 625 350 mW Derate Above 25°C 5.0 2.8 mW/°C RθJC Thermal Resistance, Junction-to-Case 125 RθJA Thermal Resistance, Junction-to-Ambient 200 °C/W °C/W 357 Notes: 3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. 4. Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead minimum 6cm2. Electrical Characteristics Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Max. Unit Off Characteristics V(BR)GSS IGSS VGS(off) Gate-Source Breakdown Voltage Gate Reverse Current Gate-Source Cut-Off Voltage IG = -10 μA, VDS = 0 -25 V VGS = -15 V, VDS = 0 -3.0 VGS = -15 V, VDS = 0, TA = 100°C -200 VDS = 15 V, ID = 10 nA MMBFJ108 -3.0 -10.0 J109 -2.0 -6.0 nA V On Characteristics IDSS rDS(on) Zero-Gate Voltage Drain Current(5) VDS = 15 V, VGS = 0 Drain-Source On Resistance VDS ≤ 0.1 V, VGS = 0 MMBFJ108 80 J109 40 mA MMBFJ108 8.0 J109 12 Ω Small Signal Characteristics Cdg(on) Csg(off) Drain-Gate &Source-Gate On Capacitance VDS = 0, VGS = 0, f = 1.0 MHz 85 pF Cdg(off) Drain-Gate Off Capacitance VDS = 0, VGS = -10 V, f = 1.0 MHz 15 pF Csg(off) Source-Gate Off Capacitance VDS = 0, VGS = -10 V, f = 1.0 MHz 15 pF Note: 5. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2%. www.onsemic.com 2 J109 / MMBFJ108 — N-Channel Switch Thermal Characteristics Parameter Interactions - DRAIN CURRENT (mA) - 3.0 V 60 40 - 4.0 V T A = 25캜 °C 20 TYP V GS(off) = - 5.0 V I D - 1.0 V - 5.0 V 0 0 0.4 0.8 1.2 1.6 VDS - DRAIN-SOURCE VOLTAGE (V) r DS @ V DS = 100mV, VGS = 0 50 V GS(off) @ V DS = 5.0V, I r DS 100 5 50 I DSS _ 2 0.1 10 _ _ _ _ 0.5 1 5 10 VGS (OFF) - GATE CUTOFF VOLTAGE (V) Figure 4. Parameter Interactions 50 100 - DRAIN CURRENT (mA) f = 0.1 - 1.0 MHz C iss (V DS = 5.0V) 10 D C rss (VDS = 0 ) 獤 T A = 25獤 °C TYP V GS(off) = - 0.7 V 40 30 V GS = 0 V 20 - 0.1 V - 0.2 V - 0.3 V - 0.4 V - 0.5 V 10 I C ts (C rs ) - CAPACITANCE (pF) 500 = 3.0 nA 10 Figure 3. Common Drain-Source 0 -4 -8 -12 -16 V GS - GATE-SOURCE VOLTAGE (V) 0 -20 0 20 10 V GS(off) @ 5.0V, 10 μA r DS r DS = V GS 1 -________ V GS(off) 5 2 1 0 0.2 0.4 0.6 0.8 1 VGS /VGS(off)- NORMALIZED GATE-SOURCE VOLTAGE (V) e n - NOISE VOLTAGE (nV / √ Hz) 100 50 1 2 3 4 VDS - DRAIN-SOURCE VOLTAGE (V) 5 Figure 6. Common Drain-Source Figure 5. Common Drain-Source r DS - NORMALIZED RESISTANCE D DRAIN CURRENT (mA) 80 1,000 I DSS @ V DS = 5.0V, V GS = 0 PULSED DSS - - 2.0 V V GS = 0 V 100 I r DS - DRAIN "ON" RESISTANCE (Ω) Common Drain-Source 100 Figure 7. Normalized Drain Resistance vs. Bias Voltage 100 50 V DG = 10V BW = 6.0 Hz @ f = 10 Hz, 100 Hz = 0.21 @ f ≥ 1.0 kHz 10 5 I D = 1.0 mA I D = 10 mA 1 0.01 0.03 0.1 0.5 1 2 10 f - FREQUENCY (kHz) Figure 8. Noise Voltage vs. Frequency www.onsemic.com 3 100 J109 / MMBFJ108 — N-Channel Switch Typical Performance Characteristics Switching Turn-On Time vs Drain Current Switching Turn-On Time vs Gate-Source Cutoff Voltage 50 t OFF - TURN-OFF TIME (ns) 캜 TA = 25°C VDD = 1.5V 8 V GS(off) = - 12V 6 I D = 30 mA 4 I D = 10 mA 2 0 Ω) r DS - DRAIN "ON" RESISTANCE (Ω V GS = 0 V GS(off) = - 3.0V 獤 125獤 °C 獤 °C 125獤 10 5 獤 °C 25獤 °獤 C - 55獤 V GS(off) = - 5.0V 25獤 °獤 C 1 1 ID 10 - DRAIN CURRENT (mA) 100 Figure 11. On Resistance vs. Drain Current g fs - TRANSCONDUCTANCE (mmhos) V GS(off) = - 3.5V 100 獤 T A = 25獤 °C 獤 T A = - 55獤 °C V DG = 10V 獤 °C T A = 25獤 f = 1.0 kHz 獤 °C T A = 125獤 V GS(off) = - 12V 0 0 5 10 15 20 I D - DRAIN CURRENT (mA) 25 100 V DG = 5.0V 10V V GS(off) 5.0V 15V 20V - 4.0V 10V 10 5.0V 15V 10V 20V 15V - 2.0V 20V 1 0.1 獤 T A = 25獤 °C f = 1.0 kHz - 1.0V 1 I D - DRAIN CURRENT (mA) 10 Figure 12. Output Conductance vs. Drain Current 700 600 10 V GS(off) = - 1.0V V GS(off) = - 3.0V 1 0.1 TA = 25캜 °C VDD = 1.5V 10 Figure 10. Switching Turn-On Time vs. Drain Current 100 50 V GS(off) = - 5.5V 20 -2 -4 -6 -8 -10 VGS(off) GS(off) - GATE-SOURCE CUTOFF VOLTAGE (V) Figure 9. Switching Turn-On Time vs. Gate-Source Cut-Off Voltage V GS(off) = - 8.5V 30 g os - OUTPUT CONDUCTANCE ( μ mhos) 0 40 V GS(off) = - 5.0V 1 I D - DRAIN CURRENT (mA) 10 PD - POWER DISSIPATION(mW) t ON ON - TURN-ON TIME (ns) 10 500 T O -9 2 S u p e rS O T -3 400 300 200 100 0 0 25 50 75 100 125 o TEM PERATURE ( C) Figure 13. Transconductance vs. Drain Current www.onsemic.com 4 Figure 14. Power Dissipation vs. Ambient Temperature 150 J109 / MMBFJ108 — N-Channel Switch Typical Performance Characteristics (Continued) J109 / MMBFJ108 — N-Channel Switch Physical Dimensions D Figure 15. 3-Lead, TO-92, JEDEC TO-92 Compliant Straight Lead Configuration, Bulk Type www.onsemic.com 5 J109 / MMBFJ108 — N-Channel Switch Physical Dimensions (Continued) Figure 16. 3-Lead, TO-92, Molded, 0.2 In Line Spacing Lead Form, Ammo, Tape and Reel Type www.onsemic.com 6 J109 / MMBFJ108 — N-Channel Switch Physical Dimensions (Continued) Figure 17. MOLDED PACKAGE, SUPERSOT, 3-LEAD www.onsemic.com 7 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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