MMBFJ201

DATA SHEET www.onsemi.com N-Channel General-Purpose Amplifier 3 3 1 MMBFJ201, MMBFJ202 Description 1 2 2 SOT−23 (TO−236) CASE 318−08 SOT−23 CASE 318BM This device is designed primarily for low level audio and general−purpose applications with high impedance signal sources. Sourced from process 52. 2 Source Applications  These are Pb−Free Devices 3 Gate ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise noted) 1 Drain (Note 1, 2) Symbol Value Unit VDG Drain−Gate Voltage 40 V VGS Gate−Source Voltage −40 V IGF Forward Gate Current 50 mA −55 to 150 C TJ, TSTG Parameter Operating and Storage Junction Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. These ratings are based on a maximum junction temperature of 150C. 2. These are steady−state limits. onsemi should be consulted on applications involving pulsed or low−duty−cycle operations. THERMAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Note 3) Symbol PD RqJA Parameter Max MARKING DIAGRAM 62xM 1 62x x M = Specific Device Code = P or Q = Date Code ORDERING INFORMATION See detailed ordering and shipping information on page 4 of this data sheet. Unit Total Device Dissipation 350 mW Derate Above 25_C 2.8 mW/C Thermal Resistance, Junction−to−Ambient 357 C/W 3. Device mounted on FR−4 PCB 36 mm x 18 mm x 1.5 mm; mounting pad for the collector lead minimum 6 cm2.  Semiconductor Components Industries, LLC, 1997 September, 2022 − Rev. 4 1 Publication Order Number: MMBFJ202/D MMBFJ201, MMBFJ202 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Parameter Test Condition Min Max Unit OFF CHARACTERISTICS V(BR)GSS IGSS VGS(off) Gate−Source Breakdown Voltage IG = −1.0 mA, VDS = 0 −40 − V Gate Reverse Current VGS = −20 V, VDS = 0 − −100 pA Gate−Source Cut−Off Voltage VDS = 20 V, ID = 10 nA MMBFJ201 −0.3 −1.5 V MMBFJ202 −0.8 −4.0 MMBFJ201 0.2 1.0 MMBFJ202 0.9 4.5 MMBFJ201 500 MMBFJ202 1000 ON CHARACTERISTICS IDSS Zero−Gate Voltage Drain Current (Note 4) VDS = 20 V, IGS = 0 mA SMALL SIGNAL CHARACTERISTICS yFS Forward Transfer Admittance VDS = 20 V, f = 1.0 kHz mmhos Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse test: pulse width  300 ms, duty cycle  2%. www.onsemi.com 2 MMBFJ201, MMBFJ202 TYPICAL PERFORMANCE CHARACTERISTICS 0.6 2.5 ID, Drain Current (mA) 0.4 ID, Drain Current (mA) VGS = −100 mV 0.5 −200 mV 0.3 −300 mV 0.2 −400 mV 0.1 −500 mV 0.0 −600 mV −800 mV 4 5 0 1 2 3 VGS = −100 mV 2.0 −200 mV −300 mV −400 mV 1.5 −600 mV 1.0 −800 mV −1.0 V 0.5 −1.2 V −1.4 V 0.0 0 1 4 5 −1.5 V VDS, Drain−Source Voltage (V) Figure 2. Common Drain−Source (MMBJF202) 10 7 VGS = 0 V 9 8 7 Ciss 6 5 4 3 2 Coss 1 0 0 4 8 12 16 5 Ciss 4 3 2 Coss 1 0 20 VGS = 0 V 6 0 4 3.0 VDS = 20 V ID, Drain Current (mA) 0.4 0.3 0.2 +125C 0.1 0.0 +25C Ta = −55C 0 0.2 0.4 0.6 0.8 12 16 20 Figure 4. Capacitance vs. Voltage (MMBJF202) Figure 3. Capacitance vs. Voltage (MMBJF201) 0.5 8 VDS, Drain−Source Voltage (V) VDS, Drain−Source Voltage (V) ID, Drain Current (mA) 3 Figure 1. Common Drain−Source (MMBJF201) Ciss, Coss, Capacitance (pF) Ciss, Coss, Capacitance (pF) VDS, Drain−Source Voltage (V) 2 VDS = 20 V 2.0 +25C 1.5 1.0 +125C 0.5 0.0 1 Ta = −55C 2.5 VGS, Gate Source Current (V) 0 0.5 1 1.5 2 VGS, Gate Source Current (V) Figure 6. Transfer Characteristics (MMBFJ202) Figure 5. Transfer Characteristics (MMBFJ201) www.onsemi.com 3 MMBFJ201, MMBFJ202 TYPICAL PERFORMANCE CHARACTERISTICS (continued) 4.0 2.0 gfs, Transconductance (mW) gfs, Transconductance (mW) 2.5 Ta = −55C +25C 1.5 +125C 1.0 0.5 0.0 0.0 −0.2 −0.4 −0.6 −0.8 3.5 Ta = −55C 3.0 +25C 2.5 2.0 +125C 1.5 1.0 0.5 0.0 0.0 −1.0 −0.5 350 1000 MMBFJ202 Total PD (mW) IGSS, Gate Leakage Current (nA) 400 Ta = +25C 10 1 0,01 0 20 300 250 200 150 100 MMBFJ201 0,1 −2.0 Figure 8. Transfer Characteristics (MMBFJ202) Figure 7. Transfer Characteristics (MMBFJ201) 100 −1.5 VGS, Gate to Source Current (V) VGS, Gate to Source Current (V) 10000 −1.0 50 40 60 0 80 0 20 40 VDG (V) 60 80 100 120 140 160 Temperature, Ta (5C) Figure 9. Leakage Current vs. Voltage Figure 10. Total PD vs. Temperature ORDERING INFORMATION Part Number Top Mark Package Shipping† MMBFJ201 62P SOT−23 (Pb−Free) 3000 / Tape & Reel MMBFJ202 62Q SOT−23 (TO−236) (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 4 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AS DATE 30 JAN 2018 SCALE 4:1 D 0.25 3 E 1 2 T HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW SEE VIEW C c MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0° INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10° GENERIC MARKING DIAGRAM* END VIEW RECOMMENDED SOLDERING FOOTPRINT XXXMG G 1 3X 2.90 3X XXX = Specific Device Code M = Date Code G = Pb−Free Package 0.90 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS STYLE 1 THRU 5: CANCELLED STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 7: PIN 1. EMITTER 2. BASE 3. COLLECTOR STYLE 9: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE STYLE 11: STYLE 12: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. CATHODE 3. CATHODE−ANODE 3. ANODE STYLE 15: PIN 1. GATE 2. CATHODE 3. ANODE STYLE 16: PIN 1. ANODE 2. CATHODE 3. CATHODE STYLE 17: PIN 1. NO CONNECTION 2. ANODE 3. CATHODE STYLE 18: STYLE 19: STYLE 20: PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE 2. CATHODE 2. ANODE 2. ANODE 3. GATE 3. ANODE 3. CATHODE−ANODE STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 22: PIN 1. RETURN 2. OUTPUT 3. INPUT STYLE 23: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 24: PIN 1. GATE 2. DRAIN 3. SOURCE STYLE 27: PIN 1. CATHODE 2. CATHODE 3. CATHODE STYLE 28: PIN 1. ANODE 2. ANODE 3. ANODE DOCUMENT NUMBER: DESCRIPTION: 98ASB42226B SOT−23 (TO−236) STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE STYLE 13: PIN 1. SOURCE 2. DRAIN 3. GATE STYLE 25: PIN 1. ANODE 2. CATHODE 3. GATE STYLE 14: PIN 1. CATHODE 2. GATE 3. ANODE STYLE 26: PIN 1. CATHODE 2. ANODE 3. NO CONNECTION Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−23 CASE 318BM ISSUE A DATE 01 SEP 2021 GENERIC MARKING DIAGRAM* XXXMG G 1 XXX = Specific Device Code M = Date Code G = Pb−Free Package DOCUMENT NUMBER: DESCRIPTION: *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. 98AON13784G SOT−23 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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