MMBFJ270

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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. MMBFJ270 P-Channel Switch Features • This device is designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers. G • Sourced from process 88. S D SOT-23 Mark : 61S Absolute Maximum Ratings (Note1) Symbol Ta = 25°C unless otherwise noted Parameter Value Units VDG Drain-Gate Voltage -30 V VGS Gate-Source Voltage 30 V IGF Forward Gate Current 50 mA TJ, TSTG Operating and Storage Junction Temperature Range -55 ~ 150 °C Note1 : These ratings are limiting values above which the serviceability of any semiconductor device may by impaired. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Thermal Characteristics Symbol Parameter Value Units PD Total Device Dissipation Derate above 25°C 225 1.8 mW mW/°C RθJA Thermal Resistance, Junction to Ambient (Note2) 556 °C/W Note2 : Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Off Characteristics Test Condition MAX Units (Note3) V(BR)GSS Gate-Source Breakdwon Voltage IG = 1.0µA, VDS = 0 IGSS Gate Reverse Current VGS = 20V, VDS = 0 VGS(off) Gate-Source Cutoff Voltage VDS = -15V, ID = -1.0nA On Characteristics MIN 30 V 200 pA 0.5 2.0 V (Note3) IDSS Zero-Gate Voltage Drain Current * VDS = -15V, VGS = 0 -2.0 -15 mA gfs Forward Transferconductance VGS = 0V, VDS = 15V, f = 1.0kHz 6000 15000 µmhos goss Common- Source Output Conduc- VGS = 0V, VDS = 15V, f = 1.0kHz tance 200 µmhos Note3 : Short duration test pulse used to minimize self-heating effect. © 2008 Fairchild Semiconductor Corporation MMBFJ270 Rev. B www.fairchildsemi.com 1 MMBFJ270 — P-Channel Switch August 2008 Common Drain-Source - TRANSCONDUCTANCE (mmhos) - DRAIN CURRENT (mA) V GS = 0 V -12 1.0 V 1.5 V -8 2.0 V -4 2.5 V 3.0 V 3.5 V 50 0 -1 -2 -3 -4 VDS - DRAIN-SOURCE VOLTAGE (V) -5 100 50 I DSS , g fs @ V DS = 15V, V GS = 0 PULSED r DS @ -100 mV, VGS = 0 V GS(off) @ V DS = - 15V, I D = - 1.0 A 1 1 V GS (OFF) Transfer Characteristics Transfer Characteristics -24 - 55°C 25°C 125°C VGS(off) = 2.5 V -16 V DS = - 15 V - DRAIN CURRENT (mA) V GS(off) = - 4.5 V - 55°C 25°C 125°C - 55°C 25°C 125°C VGS(off) = 2.5 V 12 8 - 55°C 25°C 125°C 4 D -8 VGS(off) = - 4.5 V I I D - DRAIN CURRENT (mA) 0 1 2 3 VGS - GATE-SOURCE VOLTAGE (V) 0 4 Normalized Drain Resistance vs Bias Voltage g os - OUTPUT CONDUCTANCE ( mhos) - NORMALIZED RESISTANCE ( Ω ) 10 2 5 10 - GATE CUTOFF VOLTAGE (V) 16 V DS = - 15 V 0 DS fs 5 -32 r g 10 g 0 500 I DSS r DS fs I D 0.5 V 1,000 - DRAIN "ON" RESISTANCE (Ω) -16 100 DS T A = 25°C TYP V GS(off) = 4.5 V r Parameter Interactions -20 100 50 20 10 1 2 3 VGS - GATE-SOURCE VOLTAGE (V) 4 Output Conductance vs Drain Current 1000 V GS(off) @ 5.0V, 10 A r DS r DS = V GS 1 -________ V GS(off) 5 2 1 0 0.2 0.4 0.6 0.8 1 VGS /VGS(off) - NORMALIZED GATE-SOURCE VOLTAGE (V) © 2008 Fairchild Semiconductor Corporation MMBFJ270 Rev. B 0 f = 1.0 kHz -5.0V 100 -5.0V -10V V GS(off) = - 4.5V -20V -20V -10V 10 V GS(off) = - 2.5V _ 1 0.01 _ _ 0.1 1 I D - DRAIN CURRENT (mA) _ 10 www.fairchildsemi.com 2 MMBFJ270 — P-Channel Switch Typical Characteristics MMBFJ270 — P-Channel Switch Capacitance vs Voltage Transconductance vs Drain Current 100 C is (C rs ) - CAPACITANCE (pF) g fs - TRANSCONDUCTANCE (mmhos) Typical Characteristics (Continued) 10 V GS(off) = 2.5V 5 25°C V GS(off) = 6.0V - 55°C 25°C 125°C 1 0.5 V DG = -15V f = 1.0 kHz 0.1 _ 0.1 _ _ _ 1 10 - DRAIN CURRENT (mA) ID f = 0.1 - 1.0 MHz 5 1 100 Noise Voltage vs Frequency r DS - DRAIN "ON" RESISTANCE (Ω) e n - NOISE VOLTAGE (nV / √ Hz) 100 50 I D = - 0.2 mA 10 I D = 5.0 mA 5 V DG = - 15V BW = 6.0 Hz @ f = 10 Hz, 100 Hz = 0.2f @ f ≥ 1.0 kHz 1 0.01 0.1 1 10 f - FREQUENCY (kHz) 100 C is (V DS = -15V) 10 C rs (V DS = -15V) 0 4 8 12 16 V GS - GATE-SOURCE VOLTAGE (V) 20 Channel Resistance vs Temperature 1000 500 V DS = -100 mV V GS(off) = 2.5V V GS = 0 V GS(off) = 4.5V V GS(off) = 8.0V 100 50 10 -50 0 50 100 150 T A - AMBIENT TEMPERATURE ( o C) Power Derating 300 PC[W], POWER DISSIPATION 250 200 150 100 50 0 0 25 50 75 100 125 150 175 o Tc[ C], CASE TEMPERATURE © 2008 Fairchild Semiconductor Corporation MMBFJ270 Rev. B www.fairchildsemi.com 3 MMBFJ270 — P-Channel Switch Package Dimensions ±0.10 ±0.10 2.40 0.40 ±0.03 1.30 0.45~0.60 0.20 MIN SOT-23 0.03~0.10 0.38 REF 0.40 ±0.03 +0.05 0.12 –0.023 0.96~1.14 0.97REF 2.90 ±0.10 0.95 ±0.03 0.95 ±0.03 1.90 ±0.03 0.508REF Dimensions in Millimeters © 2008 Fairchild Semiconductor Corporation MMBFJ270 Rev. B www.fairchildsemi.com 4 MMBFJ270 P-Channel Switch © 2008 Fairchild Semiconductor Corporation MMBFJ270 Rev. B www.fairchildsemi.com 5 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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