MMBFJ309LT1

MMBFJ309LT1, MMBFJ310LT1 JFET − VHF/UHF Amplifier Transistor N−Channel http://onsemi.com Features 2 SOURCE • Pb−Free Packages are Available MAXIMUM RATINGS Rating Drain−Source Voltage Gate−Source Voltage Gate Current Symbol VDS VGS IG Value 25 25 10 Unit Vdc Vdc mAdc 3 Symbol PD 225 1.8 RqJA TJ, Tstg 556 −55 to +150 mW mW/°C °C/W °C Max Unit 1 2 3 GATE 1 DRAIN THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature SOT−23 (TO−236) CASE 318 STYLE 10 MARKING DIAGRAM Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−5 = 1.0 x 0.75 x 0.062 in. 6x M G G 1 = Device Code x = U for MMBFJ309LT1 x = T for MMBFJ310LT1 M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. 6x ORDERING INFORMATION Device MMBFJ309LT1 MMBFJ309LT1G MMBFJ310LT1 MMBFJ310LT1G Package SOT−23 Shipping † 3,000 / Tape & Reel SOT−23 3,000 / Tape & Reel (Pb−Free) SOT−23 3,000 / Tape & Reel SOT−23 3,000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2006 1 February, 2006 − Rev. 3 Publication Order Number: MMBFJ309LT1/D MMBFJ309LT1, MMBFJ310LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Gate−Source Breakdown Voltage (IG = −1.0 mAdc, VDS = 0) Gate Reverse Current (VGS = −15 Vdc) Gate Reverse Current (VGS = −15 Vdc, TA = 125°C) Gate Source Cutoff Voltage (VDS = 10 Vdc, ID = 1.0 nAdc) ON CHARACTERISTICS Zero−Gate−Voltage Drain Current (VDS = 10 Vdc, VGS = 0) Gate−Source Forward Voltage (IG = 1.0 mAdc, VDS = 0) SMALL−SIGNAL CHARACTERISTICS Forward Transfer Admittance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) Output Admittance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) Input Capacitance (VGS = −10 Vdc, VDS = 0 Vdc, f = 1.0 MHz) Reverse Transfer Capacitance (VGS = −10 Vdc, VDS = 0 Vdc, f = 1.0 MHz) Equivalent Short−Circuit Input Noise Voltage (VDS = 10 Vdc, ID = 10 mAdc, f = 100 Hz) |Yfs| |yos| Ciss Crss en 8.0 − − − − − − − − 10 18 250 5.0 2.5 − mmhos mmhos pF pF MMBFJ309 MMBFJ310 IDSS VGS(f) 12 24 − − − − 30 60 1.0 mAdc Vdc MMBFJ309 MMBFJ310 V(BR)GSS IGSS VGS(off) −25 − − −1.0 −2.0 − − − − − − −1.0 −1.0 −4.0 −6.5 Vdc nAdc mAdc Vdc Symbol Min Typ Max Unit nV Hz http://onsemi.com 2 MMBFJ309LT1, MMBFJ310LT1 IDSS, SATURATION DRAIN CURRENT (mA) 70 60 I D , DRAIN CURRENT (mA) VDS = 10 V 50 40 30 20 10 −5.0 IDSS +25 °C +25 °C 40 +150°C +25 °C −55 °C +150°C 0 30 20 10 0 TA = −55°C 70 60 50 −1.0 −4.0 −3.0 −2.0 ID − VGS, GATE−SOURCE VOLTAGE (VOLTS) IDSS − VGS, GATE−SOURCE CUTOFF VOLTAGE (VOLTS) Figure 1. Drain Current and Transfer Characteristics versus Gate−Source Voltage Yfs , FORWARD TRANSCONDUCTANCE μ mhos) ( 100 k Yfs 1.0 k Yos, OUTPUT ADMITTANCE (μ mhos) CAPACITANCE (pF) 10 RDS 7.0 120 R DS , ON RESISTANCE (OHMS) Yfs 10 k 96 100 72 Cgs 4.0 48 1.0 k Yos VGS(off) = −2.3 V = VGS(off) = −5.7 V = 10 Cgd 1.0 0 10 24 100 0.01 1.0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 ID, DRAIN CURRENT (mA) 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 0 VGS, GATE SOURCE VOLTAGE (VOLTS) Figure 2. Common−Source Output Admittance and Forward Transconductance versus Drain Current Figure 3. On Resistance and Junction Capacitance versus Gate−Source Voltage http://onsemi.com 3 MMBFJ309LT1, MMBFJ310LT1 |S21|, |S11| 30 VDS = 10 V ID = 10 mA TA = 25°C 3.0 0.85 0.45 S22 2.4 Y12 (mmhos) Y11 0.79 0.39 S21 1.8 0.73 0.33 VDS = 10 V ID = 10 mA TA = 25°C S11 0.6 Y12 0 100 200 300 500 f, FREQUENCY (MHz) 700 1000 0.55 0.15 100 0.61 0.21 S12 200 300 500 f, FREQUENCY (MHz) 700 1000 0.90 0.012 0.92 0.036 0.96 0.048 0.98 |S12|, |S22| 0.060 1.00 |Y11|, |Y21 |, |Y22 | (mmhos) 24 18 12 Y21 Y22 1.2 0.67 0.27 0.024 0.94 6.0 Figure 4. Common−Gate Y Parameter Magnitude versus Frequency q21, q11 180° 50° q22 170° 160° 150° 140° 130° 40° 30° 20° 10° 0° 100 q21 q12, q22 −2 0° 87° −20 ° −40 ° −60 ° −80 ° −100 ° q12 q11 VDS = 10 V ID = 10 mA TA = 25°C 700 −120 ° 84° −140 ° −160 ° 83° −180 ° −200 ° 82° 1000 85° 86° Figure 5. Common−Gate S Parameter Magnitude versus Frequency q11, q12 −20 ° 120° −40 ° 100° −60 ° 80° −80 ° 60° q12 −100 ° 40° −120 ° 20° 100 VDS = 10 V ID = 10 mA TA = 25°C 200 300 500 f, FREQUENCY (MHz) q11 −80 ° −100 ° 1000 q21 q21 q21, q22 q11 q22 0 −20 ° −40 ° −60 ° 200 300 500 f, FREQUENCY (MHz) 700 Figure 6. Common−Gate Y Parameter Phase−Angle versus Frequency Figure 7. S Parameter Phase−Angle versus Frequency http://onsemi.com 4 MMBFJ309LT1, MMBFJ310LT1 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN D 3 SEE VIEW C E 1 2 HE c b e q 0.25 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 A L A1 L1 VIEW C DIM A A1 b c D E e L L1 HE MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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