MMBT200

PN200A / MMBT200 — PNP General-Purpose Amplifier PN200A / MMBT200 PNP General-Purpose Amplifier Description This device is designed for general-purpose amplifier applications at collector currents to 300 mA. Sourced from Process 68. C E TO-92 SOT-23 EBC Figure 1. PN200A Device Package B Figure 2. MMBT200 Device Package Ordering Information Part Number Marking Package Packing Method PN200A PN200A TO-92 3L Bulk MMBT200 N2 SOT-23 3L Tape and Reel Absolute Maximum Ratings(1),(2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit VCEO Collector-Emitter Voltage -45 V VCBO Collector-Base Voltage -60 V VEBO Emitter-Base Voltage -6 V -500 mA -55 to +150 °C IC TJ, TSTG Collector Current - Continuous Operating and Storage Junction Temperature Range Notes: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or lowduty cycle operations. © 1997 Semiconductor Components Industries, LLC. October-2017, Rev. 2 Publication Order Number: PN200A/D Values are at TA = 25°C unless otherwise noted. Symbol Max. Parameter (3) PN200A MMBT200(4) Unit Total Device Dissipation 625 350 mW Derate Above 25°C 5.0 2.8 mW/°C RθJC Thermal Resistance, Junction to Case 83.3 RθJA Thermal Resistance, Junction to Ambient 200 PD °C/W 357 °C/W Notes: 3. PCB size: FR-4 76 x 114 x 1.57 mm3 (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. 4. Device mounted on FR-4 PCB 1.6 inch X 1.6 inch X 0.06 inch. Electrical Characteristics Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Max. Unit Off Characteristics BVCEO Collector-Base Breakdown Voltage IC = -10 μA, IB = 0 Collector-Emitter Breakdown IC = -1.0 mA, IE = 0 Voltage(5) BVEBO Emitter-Base Breakdown Voltage IE = -10 μA, IC = 0 ICBO Collector Cut-Off Current VCB = -50 V, IE = 0 -50 nA ICES Collector Cut-Off Current VCE = -40 V, IE = 0 -50 nA IEBO Emitter Cut-Off Current VEB = -4.0 V, IC = 0 -50 nA BVCBO -60 V -45 V -6.0 V On Characteristics hFE DC Current Gain IC = -100 μA, VCE = -1.0 V MMBT200 PN200A 240 IC = -10 mA, VCE = -1.0 V MMBT200 100 450 PN200A 300 600 PN200A 100 MMBT200 100 PN200A 100 IC = -100 mA, VCE = -1.0 V(5) IC = -150 mA, VCE = -5.0 V(5) VCE(sat) Collector-Emitter Saturation Voltage IC = -10 mA, IB = -1.0 mA VBE(sat) Base-Emitter Saturation Voltage IC = -10 mA, IB = -1.0 mA IC = -200 mA, IB = -20 IC = -200 mA, IB = -20 80 350 -0.2 mA(5) -0.4 -0.85 mA(5) -1.00 V V Small Signal Characteristics fT Cob NF Current Gain - Bandwidth Product VCE = -20 V, IC = -20 mA, Output Capacitance VCB = -10 V, f = -1.0 MHz 6.0 pF Noise Figure IC = -100 μA, VCE = -5.0 V, RG = 2.0 kΩ, f = 1.0 kHz 4.0 dB Note: 5. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%. www.onsemi.com 2 250 MHz PN200A / MMBT200 — PNP General-Purpose Amplifier Thermal Characteristics β β VCESAT - COLLECTOR EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN 500 V CE = 5V 400 0.25 125 °C 300 - 40 °C 0 0.01 0.1 1 10 100 I C - COLLECTOR CURRENT (mA) 0 0.1 V BEON - BAS E EMITTER ON VOLTAGE (V) V BESAT - BASE EM ITTE R VOLTAGE (V) β = 10 25 °C - 40 °C 1 10 100 I C - COLLECTOR CURRE NT (mA) 300 - 40°C 25 °C 0.6 125 °C 125 °C 0.4 0.4 V CE = 5V 0.2 0.2 1 10 100 I C - COLLECTOR CURRE NT (mA) 300 0 0.1 1 10 I C - COLLECTOR CURRE NT (mA) 100 200 Figure 6. Base-Emitter On Voltage vs. Collector Current BV CER - BREAKDOWN VOLTAGE (V) Figure 5. Base-Emitter Saturation Voltage vs. Collector Current I CBO - COLLE CTOR CURRENT (nA) 125 °C 1 0.8 - 40 °C 0.6 0 0.1 25 °C 0.1 Figure 4. Collector-Emitter Saturation Voltage vs. Collector Current 1 0.8 0.2 0.05 Figure 3. Typical Pulsed Current Gain vs. Collector Current 1.2 β = 10 0.15 25 °C 200 100 0.3 100 95 V CB = 50V 90 10 85 1 80 0.1 0.01 25 75 50 75 100 T A - AMBIE NT TEMPERATURE ( ° C) 70 0.1 125 Figure 7. Collector Cut-Off Current vs. Ambient Temperature 1 10 RESISTANCE (kΩ ) 100 1000 Figure 8. Collector-Emitter Breakdown Voltage with Resistance Between Emitter-Base www.onsemi.com 3 PN200A / MMBT200 — PNP General-Purpose Amplifier Typical Performance Characteristics β V CE - COLLECTOR-EMITTER VOLTAGE (V) 100 4 f = 1.0 MHz CAPACITANCE (pF) Ta = 25°C 3 Ic = 2 100 uA 300 mA 50 mA 1 0 100 300 700 10 Cib Cob 0.1 2000 4000 1 I B - BASE CURRENT (uA) f T - GAIN BANDWIDTH PRODUCT (MHz) 300 40 270 Vce = 5V TIME (nS) 210 20 180 IB1 = IB2 = Ic / 10 V cc = 10 V 150 120 90 10 tf 60 30 1 10 20 50 0 10 100 150 I C - COLLECTOR CURRENT (mA) 700 600 500 TO-92 400 SOT-23 300 200 100 0 25 50 75 100 TEMPER ATURE ( °C) 125 tr td 20 30 50 100 200 I C - COLLECTOR CURRENT (mA) 300 Figure 12. Switching Times vs. Collector Current Figure 11. Gain Bandwidth Product vs. Collector Current P D - POWER DISSIPATION (mW) ts 240 30 0 100 Figure 10. Input and Output Capacitance vs. Reverse Voltage Figure 9. Collector Saturation Region 0 10 V CE - COLLECTOR VOLTAGE (V) 150 Figure 13. Power Dissipation vs. Ambient Temperature www.onsemi.com 4 PN200A / MMBT200 — PNP General-Purpose Amplifier Typical Performance Characteristics (Continued) PN200A / MMBT200 — PNP General-Purpose Amplifier Physical Dimensions TO-92 D Figure 14. 3-LEAD, TO-92, MOLDED, STD STRAGHIT LEAD (NO EOL CODE) (ACTIVE) Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor's worldwide terms and conditions, specifically the warranty therein, which covers ON Semiconductor products. www.onsemi.com 5 SOT-23 0.95 2.92±0.20 3 1.40 1.30+0.20 -0.15 1 (0.29) 2 0.95 1.90 2.20 0.60 0.37 0.20 A B 1.90 1.00 LAND PATTERN RECOMMENDATION SEE DETAIL A 1.20 MAX 0.10 0.00 (0.93) 0.10 C C 2.40±0.30 NOTES: UNLESS OTHERWISE SPECIFIED GAGE PLANE 0.23 0.08 0.25 0.20 MIN (0.55) SEATING PLANE A) REFERENCE JEDEC REGISTRATION TO-236, VARIATION AB, ISSUE H. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE INCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR EXTRUSIONS. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M - 1994. E) DRAWING FILE NAME: MA03DREV10 SCALE: 2X Figure 15. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE (ACTIVE) Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and conditions, specifically the warranty therein, which covers ON Semiconductor products. www.onsemi.com 6 PN200A / MMBT200 — PNP General-Purpose Amplifier Physical Dimensions (Continued) ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ❖ © Semiconductor Components Industries, LLC N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative www.onsemi.com