MMBT2131T1 General Purpose Transistors
PNP Bipolar Junction Transistor
(Complementary NPN Device: MMBT2132T1/T3)
NOTE: Voltage and Current are negative for the PNP Transistor. Features http://onsemi.com
• Pb−Free Package is Available
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current Base Current Total Power Dissipation @ TC = 25°C Total Power Dissipation @ TC = 85°C Thermal Resistance, Junction−to−Ambient (Note 1) Total Power Dissipation @ TC = 25°C Total Power Dissipation @ TC = 85°C Thermal Resistance, Junction−to−Ambient (Note 2) Operating and Storage Temperature Range Symbol VCEO VCBO VEBO IC IB PD PD RqJA PD PD RqJA TJ, Tstg Value 30 40 5.0 700 350 342 178 366 665 346 188 −55 to +150 Unit V V V mA mA mW mW °C/W mW mW °C/W °C
0.7 AMPERES 30 VOLTS − V(BR)CEO 342 mW
COLLECTOR PINS 2, 5 BASE PIN 6 EMITTER PIN 3
4 65 12 3
SC−74 CASE 318F STYLE 2
MARKING DIAGRAM
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Minimum FR−4 or G−10 PCB, Operating to Steady State. 2. Mounted onto a 2″ square FR−4 Board (1″ sq. 2 oz Cu 0.06″ thick single sided), Operating to Steady State.
DB M G G
DB = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location.
ORDERING INFORMATION
Device MMBT2131T1 MMBT2131T1G Package SC−74 SC−74 (Pb−Free) Shipping † 3000/Tape & Reel 3000/Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
1
January, 2006 − Rev. 4
Publication Order Number: MMBT2131T1/D
MMBT2131T1
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Collector −Base Breakdown Voltage Collector −Emitter Breakdown Voltage Emitter−Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS DC Current Gain Collector −Emitter Saturation Voltage Collector −Emitter Saturation Voltage Base−Emitter Saturation Voltage Collector−Emitter Saturation Voltage (VCE = 3.0 V, IC = 100 mA) (IC = 500 mA, IB = 50 mA) (IC = 700 mA, IB = 70 mA) (IC = 700 mA, IB = 70 mA) (IC = 700 mA, VCE = 1.0 V) hFE VCE(sat) VCE(sat) VBE(sat) VBE(on) 150 − − − − − − − − − − 0.25 0.4 1.1 1.0 V V V V V (IC = 100 mA) (IC = 10 mA) (IE = 100 mA) (VCB = 25 V, IE = 0 A) (VCB = 25 V, IE = 0 A, TA = 125°C) (VEB = 5.0 V, IC = 0 A) V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO 40 30 5.0 − − − − − − − − − − − − 1.0 10 10 V V V mA mA Symbol Min Typ Max Unit
VCE(sat), COLLECTOR−EMITTER VOLTAGE (V)
VCE(sat), COLLECTOR−EMITTER VOLTAGE (V)
0.5 0.4 0.3 0.2 0.1 0 IC = 1.0 mA 0.000001 0.00001 0.1 A
0.2 0.5 A 0.15
0.7 A 0.5 A 10 mA 0.0001
0.1 0.1 A
0.05 IC = 1.0 mA 0 0.000001 0.00001
10 mA
0.001
0.01
0.1
0.0001
0.001
0.01
0.1
IB, BASE CURRENT (A)
IB, BASE CURRENT (A)
Figure 1. Collector Saturation Region
1000 VCE = 3.0 V h FE , DC CURRENT GAIN 1.0
Figure 2. Collector Saturation Region
VBE(sat)
150°C 25°C −40°C
VOLTAGE (V)
0.1
VCE(sat) 100 0.01 0.1 IC, COLLECTOR CURRENT (A) 1.0 0.01 0.001 0.01 0.1
IC/IB = 10 1.0
IC, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain
Figure 4. “ON” Voltages
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2
MMBT2131T1
1.0 VBE(sat) VCE(sat) , VOLTAGE (V) 0.12 0.16 IC/IB = 10 0 °C T = 85°C
25°C
VOLTAGE (V)
0.1 VCE(sat)
0.08
0.04
0.01
IC/IB = 100 0.001 0.01 0.1 1.0
0
0.01
0.1 IC, COLLECTOR CURRENT (A)
1.0
IC, COLLECTOR CURRENT (A)
Figure 5. “ON” Voltages
Figure 6. Collector−Emitter Saturation Voltage
0.6 IC/IB = 100 0.5 VCE(sat), VOLTAGE (V) 0.4 0.3 0.2 0.1 0 0 °C T = 85°C 25°C VBE(on) , VOLTAGE (V)
1.0 −40°C 0.75 25°C
0.5
150°C
0.25 VCE = 1.0 V
0.1 IC, COLLECTOR CURRENT (A)
1.0
0
0.0001
0.001
0.01
0.1
1.0
IC, COLLECTOR CURRENT (A)
Figure 7. Collector−Emitter Saturation Voltage
TRANSIENT THERMAL RESISTANCE (NORMALIZED)
Figure 8. VBE(on) Voltage
1.0 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.0001 0.001 0.01 0.1 TIME (sec) P(pk) t1 t2 DUTY CYCLE, D = t1/t2 1.0 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN569) ZqJA(t) = r(t) RqJA TJ(pk) − TA = P(pk) ZqJA(t)
0.01
10
100
Figure 9. Thermal Response Curve
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3
MMBT2131T1
PACKAGE DIMENSIONS
SC−74 CASE 318F−05 ISSUE L
D
6
5 1 2
4
HE
E
3
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318F−01, −02, −03 OBSOLETE. NEW STANDARD 318F−04. DIM A A1 b c D E e L HE q STYLE 2: PIN 1. 2. 3. 4. 5. 6. MIN 0.90 0.01 0.25 0.10 2.90 1.30 0.85 0.20 2.50 0° MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.37 0.50 0.18 0.26 3.00 3.10 1.50 1.70 0.95 1.05 0.40 0.60 2.75 3.00 10° − MIN 0.035 0.001 0.010 0.004 0.114 0.051 0.034 0.008 0.099 0° INCHES NOM 0.039 0.002 0.015 0.007 0.118 0.059 0.037 0.016 0.108 − MAX 0.043 0.004 0.020 0.010 0.122 0.067 0.041 0.024 0.118 10°
b e q
0.05 (0.002) A1
A L
C
NO CONNECTION COLLECTOR EMITTER NO CONNECTION COLLECTOR BASE
SOLDERING FOOTPRINT*
2.4 0.094
1.9 0.074 0.7 0.028
0.95 0.037 0.95 0.037
1.0 0.039
SCALE 10:1
mm inches
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
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PUBLICATION ORDERING INFORMATION
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4
MMBT2131T1/D
