MMBT2132T3
General Purpose
Transistors
NPN Bipolar Junction Transistor
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Features
• Pb−Free Package is Available
0.7 AMPS
30 VOLTS − V(BR)CEO
342 mW
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
VCEO
30
V
Collector−Base Voltage
VCBO
40
V
Emitter−Base Voltage
VEBO
5.0
V
Collector Current
IC
700
mA
Base Current
IB
350
mA
Total Power Dissipation @ TC = 25°C
Total Power Dissipation @ TC = 85°C
Thermal Resistance, Junction−to−Ambient
(Note 1)
PD
PD
342
178
mW
mW
RqJA
366
°C/W
Total Power Dissipation @ TC = 25°C
Total Power Dissipation @ TC = 85°C
Thermal Resistance, Junction−to−Ambient
(Note 2)
PD
PD
665
346
mW
mW
RqJA
188
°C/W
Operating and Storage Temperature Range
TJ, Tstg
−55 to +150
°C
COLLECTOR
PINS 2, 5
BASE
PIN 6
EMITTER
PIN 3
TSOP−6/SC−74
CASE 318F
STYLE 2
6
1
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Minimum FR−4 or G−10 PCB, Operating to Steady State.
2. Mounted onto a 2″ square FR−4 Board (1″ sq 2 oz Cu 0.06″ thick single sided),
Operating to Steady State.
MARKING DIAGRAM
DC M G
G
1
DC = Specific Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping †
MMBT2132T3
TSOP−6
10,000/Tape & Reel
TSOP−6
(Pb−Free)
10,000/Tape & Reel
MMBT2132T3G
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 1
1
Publication Order Number:
MMBT2132T3/D
MMBT2132T3
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector −Base Breakdown Voltage
(IC = 100 mAdc)
V(BR)CBO
40
−
−
Vdc
Collector −Emitter Breakdown Voltage
(IC = 10 mAdc)
V(BR)CEO
30
−
−
Vdc
Emitter−Base Breakdown Voltage
(IE = 100 mAdc)
V(BR)EBO
5.0
−
−
Vdc
(VCB = 25 Vdc, IE = 0 Adc)
(VCB = 25 Vdc, IE = 0 Adc, TA = 125°C)
ICBO
−
−
−
−
1.0
10
mAdc
(VEB = 5.0 Vdc, IC = 0 Adc)
IEBO
−
−
10
mAdc
(VCE = 3.0 Vdc, IC = 100 mAdc)
hFE
150
−
−
Vdc
Collector −Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
VCE(sat)
−
−
0.25
Vdc
Collector −Emitter Saturation Voltage
(IC = 700 mAdc, IB = 70 mAdc)
VCE(sat)
−
−
0.4
Vdc
Base−Emitter Saturation Voltage
(IC = 700 mAdc, IB = 70 mAdc)
VBE(sat)
−
−
1.1
Vdc
(IC = 700 mAdc, VCE = 1.0 Vdc)
VBE(on)
−
−
1.0
Vdc
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS
DC Current Gain
0.3
VCE(sat), COLLECTOR−EMITTER VOLTAGE (V)
VCE(sat), COLLECTOR−EMITTER VOLTAGE (V)
Collector−Emitter Saturation Voltage
0.7 A
0.2
0.5 A
0.1
10 mA
0
0.1 A
IC = 1.0 mA
0.000001 0.00001
0.0001
0.001
0.01
0.1
0.1
0.1 A
10 mA
IC = 1.0 mA
0
0.000001 0.00001
0.0001
0.01
IB, BASE CURRENT (A)
IB, BASE CURRENT (A)
Figure 1. Collector Saturation Region
Figure 2. Collector Saturation Region
0.1
1.0
1000
VBE(sat)
h FE , DC CURRENT GAIN
VCE = 3.0 V
VOLTAGE (V)
25°C
150°C
0.1
0.01
VCE(sat)
−40°C
100
0.001
0.01
0.1
1.0
0.001
IC/IB = 10
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain
Figure 4. “ON” Voltages
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2
1.0
MMBT2132T3
1.0
0.16
VCE(sat) , VOLTAGE (V)
IC/IB = 10
0.1
VCE(sat)
0.01
0.001
0.1
0.01
25°C
0°C
0.08
0.04
0
1.0
0.01
1.0
0.1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 5. “ON” Voltages
Figure 6. Collector−Emitter Saturation Voltage
0.2
1.0
0°C
IC/IB = 100
VCE(sat), VOLTAGE (V)
T = 85°C
0.12
IC/IB = 100
−40°C
25°C
0.15
VBE(on) , VOLTAGE (V)
VOLTAGE (V)
VBE(sat)
T = 85°C
0.1
0.05
0.75
25°C
150°C
0.5
0.25
VCE = 1.0 V
TRANSIENT THERMAL RESISTANCE (NORMALIZED)
0
0.01
0.1
0
1.0
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 7. Collector−Emitter Saturation Voltage
Figure 8. VBE(on) Voltage
1.0
1.0
0.5
0.2
0.1
0.1
P(pk)
0.05
t1
0.02
0.01
t2
DUTY CYCLE, D = t1/t2
0.01
0.0001
0.001
0.01
0.1
1.0
TIME (sec)
Figure 9. Thermal Response Curve
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3
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1 (SEE AN569)
ZqJA(t) = r(t) RqJA
TJ(pk) − TA = P(pk) ZqJA(t)
10
100
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SC−74
CASE 318F
ISSUE P
6
1
SCALE 2:1
DATE 07 OCT 2021
GENERIC
MARKING DIAGRAM*
XXX MG
G
XXX
M
G
= Specific Device Code
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
STYLE 1:
PIN 1. CATHODE
2. ANODE
3. CATHODE
4. CATHODE
5. ANODE
6. CATHODE
STYLE 2:
PIN 1. NO CONNECTION
2. COLLECTOR
3. EMITTER
4. NO CONNECTION
5. COLLECTOR
6. BASE
STYLE 3:
PIN 1. EMITTER 1
2. BASE 1
3. COLLECTOR 2
4. EMITTER 2
5. BASE 2
6. COLLECTOR 1
STYLE 4:
PIN 1. COLLECTOR 2
2. EMITTER 1/EMITTER 2
3. COLLECTOR 1
4. EMITTER 3
5. BASE 1/BASE 2/COLLECTOR 3
6. BASE 3
STYLE 5:
PIN 1. CHANNEL 1
2. ANODE
3. CHANNEL 2
4. CHANNEL 3
5. CATHODE
6. CHANNEL 4
STYLE 7:
PIN 1. SOURCE 1
2. GATE 1
3. DRAIN 2
4. SOURCE 2
5. GATE 2
6. DRAIN 1
STYLE 8:
PIN 1. EMITTER 1
2. BASE 2
3. COLLECTOR 2
4. EMITTER 2
5. BASE 1
6. COLLECTOR 1
STYLE 9:
PIN 1. EMITTER 2
2. BASE 2
3. COLLECTOR 1
4. EMITTER 1
5. BASE 1
6. COLLECTOR 2
STYLE 10:
PIN 1. ANODE/CATHODE
2. BASE
3. EMITTER
4. COLLECTOR
5. ANODE
6. CATHODE
STYLE 11:
PIN 1. EMITTER
2. BASE
3. ANODE/CATHODE
4. ANODE
5. CATHODE
6. COLLECTOR
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42973B
SC−74
STYLE 6:
PIN 1. CATHODE
2. ANODE
3. CATHODE
4. CATHODE
5. CATHODE
6. CATHODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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