MMBT2222ATT1 General Purpose Transistor
NPN Silicon
These transistors are designed for general purpose amplifier applications. They are housed in the SOT−416/SC−75 package which is designed for low power surface mount applications.
Features
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COLLECTOR 3 1 BASE
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25°C)
Rating Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous Symbol VCEO VCBO VEBO IC Max 40 75 6.0 600 Unit Vdc Vdc Vdc mAdc 1 2 3
2 EMITTER
CASE 463 SOT−416/SC−75 STYLE 1
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation (Note 1) TA = 25°C Thermal Resistance, Junction−to−Ambient Operating and Storage Junction Temperature Range Symbol PD RqJA TJ, Tstg Max 150 833 −55 to +150 Unit mW °C/W °C 1 1P = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) 1P M G G
MARKING DIAGRAM
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint.
ORDERING INFORMATION
Device Package Shipping†
MMBT2222ATT1G SOT−416 3000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2010
October, 2010 − Rev. 4
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Publication Order Number: MMBT2222ATT1/D
MMBT2222ATT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Collector − Emitter Breakdown Voltage (Note 1) (IC = 1.0 mAdc, IB = 0) Collector − Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter − Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Base Cutoff Current (VCE = 60 Vdc, VEB = 3.0 Vdc) Collector Cutoff Current (VCE = 60 Vdc, VEB = 3.0 Vdc) ON CHARACTERISTICS (Note 2) DC Current Gain (IC = 0.1 mAdc, VCE = 10 Vdc) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 150 mAdc, VCE = 10 Vdc) (IC = 500 mAdc, VCE = 10 Vdc) Collector − Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) Base − Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) SMALL− SIGNAL CHARACTERISTICS Current − Gain − Bandwidth Product (IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) Voltage Feedback Ratio (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) Small − Signal Current Gain (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) Output Admittance (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) Noise Figure (VCE = 10 Vdc, IC = 100 mAdc, RS = 1.0 k ohms, f = 1.0 kHz) SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (VCC = 3.0 Vdc, VBE = − 0.5 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) (VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) td tr ts tf − − − − 10 25 225 60 ns fT Cobo Cibo hie hre hfe hoe NF 300 − − 0.25 − 75 25 − − 8.0 30 1.25 4.0 375 200 4.0 MHz pF pF kW X 10− 4 − mmhos dB HFE − 35 50 75 100 40 − − 0.6 − − − − − − Vdc 0.3 1.0 Vdc 1.2 2.0 V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX 40 75 6.0 − − − − − 20 10 Vdc Vdc Vdc nAdc nAdc Symbol Min Max Unit
VCE(sat)
VBE(sat)
ns
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint. 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
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MMBT2222ATT1
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+ 30 V +16 V 0 -2 V 1.0 to 100 ms, DUTY CYCLE ≈ 2.0% 1 kW < 2 ns 200 +16 V 0 CS* < 10 pF -14 V < 20 ns 1k 1N914 CS* < 10 pF 1.0 to 100 ms, DUTY CYCLE ≈ 2.0% + 30 V 200
-4 V Scope rise time < 4 ns *Total shunt capacitance of test jig, connectors, and oscilloscope.
Figure 1. Turn−On Time
Figure 2. Turn−Off Time
1000 700 500 hFE , DC CURRENT GAIN 300 200
TJ = 125°C
25°C 100 70 50 30 20 10 0.1 -55°C VCE = 1.0 V VCE = 10 V 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mA) 30 50 70 100 200 300 500 700 1.0 k
Figure 3. DC Current Gain
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
1.0 TJ = 25°C 0.8 IC = 1.0 mA
0.6
10 mA
150 mA
500 mA
0.4
0.2
0 0.005
0.01
0.02 0.03
0.05
0.1
0.2 0.3 0.5 1.0 IB, BASE CURRENT (mA)
2.0
3.0
5.0
10
20
30
50
Figure 4. Collector Saturation Region
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MMBT2222ATT1
200 100 70 50 t, TIME (ns) 30 20 10 7.0 5.0 3.0 2.0 5.0 7.0 10 200 300 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 500 IC/IB = 10 TJ = 25°C tr @ VCC = 30 V td @ VEB(off) = 2.0 V td @ VEB(off) = 0 500 300 200 100 70 50 30 20 10 7.0 5.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 200 300 500 t′s = ts - 1/8 tf VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25°C
t, TIME (ns)
tf
Figure 5. Turn − On Time
Figure 6. Turn − Off Time
10 8.0 NF, NOISE FIGURE (dB) IC = 1.0 mA, RS = 150 W 500 mA, RS = 200 W 100 mA, RS = 2.0 kW 50 mA, RS = 4.0 kW RS = OPTIMUM RS = SOURCE RS = RESISTANCE
10 f = 1.0 kHz 8.0 NF, NOISE FIGURE (dB) IC = 50 mA 100 mA 500 mA 1.0 mA
6.0
6.0
4.0
4.0
2.0
2.0
0 0.01 0.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0 10
20
50 100
0 50
100 200
500 1.0 k 2.0 k
5.0 k 10 k 20 k
50 k 100 k
f, FREQUENCY (kHz)
RS, SOURCE RESISTANCE (OHMS)
Figure 7. Frequency Effects
f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz)
Figure 8. Source Resistance Effects
30 20 CAPACITANCE (pF) Ceb 10 7.0 5.0 Ccb 3.0 2.0 0.1
500 VCE = 20 V TJ = 25°C 300 200
100 70 50 1.0
0.2 0.3
0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE VOLTAGE (VOLTS)
20 30
50
2.0
3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA)
50
70 100
Figure 9. Capacitances
Figure 10. Current−Gain Bandwidth Product
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MMBT2222ATT1
1 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) IC/IB = 10 VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 150°C 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 150°C −55°C 25°C IC/IB = 10
0.1 −55°C
25°C 0.001 0.01 0.1 1
0.01
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 11. Collector Emitter Saturation Voltage vs. Collector Current
VBE(on), BASE−EMITTER VOLTAGE (V) 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.001 0.01 0.1 1 150°C 25°C −55°C COEFFICIENT (mV/ °C) VCE = 1 V 0 - 0.5 - 1.0 - 1.5 - 2.0 - 2.5 +0.5
Figure 12. Base Emitter Saturation Voltage vs. Collector Current
RqVC for VCE(sat)
RqVB for VBE
0.1 0.2
0.5
IC, COLLECTOR CURRENT (A)
1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT (mA)
500
Figure 13. Base Emitter Voltage vs. Collector Current
10
Figure 14. Temperature Coefficients
10 ms 1 Thermal Limit IC (A) 0.1 100 ms 1s 1 ms
0.01 Single Pulse Test @ TA = 25°C 0.01 0.1 1 VCE (Vdc) 10 100
0.001
Figure 15. Safe Operating Area
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MMBT2222ATT1
PACKAGE DIMENSIONS
SC−75/SOT−416 CASE 463−01 ISSUE F
−E−
2 3
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER.
e
1
−D−
b 3 PL 0.20 (0.008)
M
D
HE
0.20 (0.008) E
DIM A A1 b C D E e L HE
MILLIMETERS MIN NOM MAX 0.70 0.80 0.90 0.00 0.05 0.10 0.15 0.20 0.30 0.10 0.15 0.25 1.55 1.60 1.65 0.70 0.80 0.90 1.00 BSC 0.10 0.15 0.20 1.50 1.60 1.70
INCHES NOM MAX 0.031 0.035 0.002 0.004 0.008 0.012 0.006 0.010 0.063 0.067 0.031 0.035 0.04 BSC 0.004 0.006 0.008 0.061 0.063 0.065 MIN 0.027 0.000 0.006 0.004 0.059 0.027
C
A L A1
STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR
SOLDERING FOOTPRINT*
0.356 0.014
1.803 0.071
0.787 0.031
0.508 0.020
1.000 0.039
SCALE 10:1 mm inches
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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MMBT2222ATT1/D
