MMBT2222ATT1G

MMBT2222ATT1G, NSVMMBT2222ATT1G General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT−416/SC−75 package which is designed for low power surface mount applications. www.onsemi.com COLLECTOR 3 Features • NSV Prefix for Automotive and Other Applications Requiring • 1 BASE Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 2 EMITTER 3 MAXIMUM RATINGS (TA = 25°C) 2 Symbol Max Unit Collector−Emitter Voltage VCEO 40 Vdc Collector−Base Voltage VCBO 75 Vdc Emitter−Base Voltage VEBO 6.0 Vdc IC 600 mAdc Symbol Max Unit PD 150 mW RqJA 833 °C/W TJ, Tstg −55 to +150 °C Rating Collector Current − Continuous CASE 463 SOT−416/SC−75 STYLE 1 1 MARKING DIAGRAM 1P M G G THERMAL CHARACTERISTICS Characteristic Total Device Dissipation (Note 1) TA = 25°C Thermal Resistance, Junction−to−Ambient Operating and Storage Junction Temperature Range 1 1P = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint. Package Shipping† SOT−416 (Pb−Free) 3000 / Tape & Reel NSVMMBT2222ATT1G SOT−416 (Pb−Free) 3000 / Tape & Reel Device MMBT2222ATT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2013 July, 2018 − Rev. 6 1 Publication Order Number: MMBT2222ATT1/D MMBT2222ATT1G, NSVMMBT2222ATT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Max Unit Collector −Emitter Breakdown Voltage (Note 1) (IC = 10 mAdc, IB = 0) V(BR)CEO 40 − Vdc Collector −Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO 75 − Vdc Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 6.0 − Vdc Base Cutoff Current (VCE = 60 Vdc, VEB = 3.0 Vdc) IBL − 20 nAdc Collector Cutoff Current (VCE = 60 Vdc, VEB = 3.0 Vdc) ICEX − 10 nAdc 35 50 75 100 40 − − − − − − − 0.3 1.0 0.6 − 1.2 2.0 fT 300 − MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cobo − 8.0 pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo − 30 pF Input Impedance (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) hie 0.25 1.25 kW Voltage Feedback Ratio (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) hre − 4.0 X 10− 4 Small −Signal Current Gain (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) hfe 75 375 − Output Admittance (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) hoe 25 200 mmhos Noise Figure (VCE = 10 Vdc, IC = 100 mAdc, RS = 1.0 k ohms, f = 1.0 kHz) NF − 4.0 dB (VCC = 3.0 Vdc, VBE = − 0.5 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) td − 10 tr − 25 (VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) ts − 225 tf − 60 Characteristic OFF CHARACTERISTICS ON CHARACTERISTICS (Note 2) HFE DC Current Gain (IC = 0.1 mAdc, VCE = 10 Vdc) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 150 mAdc, VCE = 10 Vdc) (IC = 500 mAdc, VCE = 10 Vdc) Collector −Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) VCE(sat) Base −Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) VBE(sat) − Vdc Vdc SMALL− SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint. 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. www.onsemi.com 2 ns ns MMBT2222ATT1G, NSVMMBT2222ATT1G SWITCHING TIME EQUIVALENT TEST CIRCUITS +30 V +30 V 1.0 to 100 ms, DUTY CYCLE ≈ 2.0% +16 V 200 1.0 to 100 ms, DUTY CYCLE ≈ 2.0% +16 V 200 0 0 -2 V 1 kW < 2 ns 1k -14 V CS* < 10 pF < 20 ns CS* < 10 pF 1N914 -4 V Scope rise time < 4 ns *Total shunt capacitance of test jig, connectors, and oscilloscope. Figure 1. Turn−On Time Figure 2. Turn−Off Time hFE , DC CURRENT GAIN 1000 700 500 TJ = 125°C 300 200 25°C 100 70 50 -55°C 30 VCE = 1.0 V VCE = 10 V 20 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mA) 30 50 70 100 200 300 500 700 1.0 k VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 3. DC Current Gain 1.0 TJ = 25°C 0.8 0.6 IC = 1.0 mA 10 mA 150 mA 500 mA 0.4 0.2 0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 IB, BASE CURRENT (mA) 2.0 Figure 4. Collector Saturation Region www.onsemi.com 3 3.0 5.0 10 20 30 50 MMBT2222ATT1G, NSVMMBT2222ATT1G 200 500 IC/IB = 10 TJ = 25°C tr @ VCC = 30 V td @ VEB(off) = 2.0 V td @ VEB(off) = 0 30 20 10 7.0 5.0 200 t′s = ts - 1/8 tf 100 70 50 tf 30 20 10 7.0 5.0 3.0 2.0 5.0 7.0 10 200 300 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 500 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) Figure 5. Turn −On Time RS = OPTIMUM RS = SOURCE RS = RESISTANCE IC = 1.0 mA, RS = 150 W 500 mA, RS = 200 W 100 mA, RS = 2.0 kW 50 mA, RS = 4.0 kW 500 6.0 f = 1.0 kHz 8.0 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 300 10 8.0 4.0 IC = 50 mA 100 mA 500 mA 1.0 mA 6.0 4.0 2.0 2.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 0 50 50 100 20 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k Figure 7. Frequency Effects Figure 8. Source Resistance Effects f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz) RS, SOURCE RESISTANCE (OHMS) 20 Ceb 10 7.0 5.0 Ccb 3.0 0.2 0.3 100 200 f, FREQUENCY (kHz) 30 CAPACITANCE (pF) 200 Figure 6. Turn −Off Time 10 2.0 0.1 VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25°C 300 t, TIME (ns) t, TIME (ns) 100 70 50 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE VOLTAGE (VOLTS) 20 30 50 500 VCE = 20 V TJ = 25°C 300 200 100 70 50 1.0 Figure 9. Capacitances 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 Figure 10. Current−Gain Bandwidth Product www.onsemi.com 4 MMBT2222ATT1G, NSVMMBT2222ATT1G 1.3 150°C 0.1 −55°C 25°C 0.001 1.0 0.9 −55°C 0.8 25°C 0.7 0.6 150°C 0.5 0.4 0.01 0.1 0.001 1 0.01 1 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 11. Collector Emitter Saturation Voltage vs. Collector Current Figure 12. Base Emitter Saturation Voltage vs. Collector Current 1.2 +0.5 VCE = 1 V 0 0.9 COEFFICIENT (mV/ °C) 1.0 −55°C 0.8 25°C 0.7 0.6 0.5 150°C 0.4 RqVC for VCE(sat) -0.5 -1.0 -1.5 RqVB for VBE -2.0 0.3 0.2 -2.5 0.001 0.01 0.1 1 0.1 0.2 0.5 IC, COLLECTOR CURRENT (A) 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) Figure 14. Temperature Coefficients Figure 13. Base Emitter Voltage vs. Collector Current 10 10 ms 100 ms 1 1 ms 1s Thermal Limit IC (A) VBE(on), BASE−EMITTER VOLTAGE (V) 1.1 0.3 0.2 0.01 1.1 IC/IB = 10 1.2 IC/IB = 10 VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 1 0.1 0.01 0.001 Single Pulse Test @ TA = 25°C 0.01 0.1 1 10 VCE (Vdc) Figure 15. Safe Operating Area www.onsemi.com 5 100 500 MMBT2222ATT1G, NSVMMBT2222ATT1G PACKAGE DIMENSIONS SC−75/SOT−416 CASE 463 ISSUE G NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. −E− 2 3 b 3 PL 0.20 (0.008) e DIM A A1 b C D E e L HE −D− 1 M D 0.20 (0.008) E HE C INCHES NOM MAX 0.031 0.035 0.002 0.004 0.008 0.012 0.006 0.010 0.063 0.065 0.031 0.035 0.04 BSC 0.004 0.006 0.008 0.060 0.063 0.067 MIN 0.027 0.000 0.006 0.004 0.061 0.027 STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR A L MILLIMETERS MIN NOM MAX 0.70 0.80 0.90 0.00 0.05 0.10 0.15 0.20 0.30 0.10 0.15 0.25 1.55 1.60 1.65 0.70 0.80 0.90 1.00 BSC 0.10 0.15 0.20 1.50 1.60 1.70 A1 SOLDERING FOOTPRINT* 0.356 0.014 1.803 0.071 0.787 0.031 0.508 0.020 1.000 0.039 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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