Description
Features
The PN2907A, MMBT2907A, and PZT2907A are 60 V
PNP bipolar transistors designed for use as a generalpurpose amplifier or switch in applications that require
200 MHz (Minimum)
up to 500 mA. Offered in an ultra-small surface-mount
• Maximum Turn-On Time (ton): 45 ns
package (SOT-223), the PZT2907A is ideal for spaceconstrained systems. The NPN complementary types
• Maximum Turn-Off Time (toff): 100 ns
are the PN2222A, MMBT2222A, and PZT2222A;
• Ultra-Small Surface-Mount Package: SOT-223 (PZT2907A)
respectively.
• High DC Current Gain (hFE) Range: 100 ~ 300
• High-Current Gain Bandwidth Product (fT):
Applications
• General-Purpose Amplifier
• Switch
MMBT2907A
PN2907A
PZT2907A
C
C
E
E
TO-92
SOT-23
Mark:2F
EBC
C
SOT-223
B
B
Ordering Information
Part Number
Top Mark
Package
Packing Method
PN2907ABU
2907A
TO-92 3L
Bulk
PN2907ATF
2907A
TO-92 3L
Tape and Reel
PN2907ATFR
2907A
TO-92 3L
Tape and Reel
PN2907ATA
2907A
TO-92 3L
Ammo
PN2907ATAR
2907A
TO-92 3L
Ammo
MMBT2907A
2F
SOT-23 3L
Tape and Reel
MMBT2907A-D87Z
2F
SOT-23 3L
Tape and Reel
PZT2907A
2907A
SOT-223 4L
Tape and Reel
© 1998 Semiconductor Components Industries, LLC.
October-2017, Rev. 2
Publication Order Number:
PZT2907A/D
PN2907A / MMBT2907A / PZT2907A — 60 V PNP General-Purpose Transistor
PN2907A / MMBT2907A / PZT2907A
60 V PNP General-Purpose Transistor
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Value
Unit
VCEO
Collector-Emitter Voltage
-60
V
VCBO
Collector-Base Voltage
-60
V
VEBO
Emitter-Base Voltage
-5.0
V
-800
mA
-55 to +150
°C
IC
TJ, TSTG
Parameter
Collector Current - Continuous
Operating and Storage Junction Temperature Range
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or lowduty cycle operations.
Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Max.
Parameter
Unit
PN2907A(4)
MMBT2907A(3)
PZT2907A(4)
Total Device Dissipation
625
350
1000
mW
Derate Above 25°C
5.0
2.8
8.0
mW/°C
RθJC
Thermal Resistance, Junction to Case
83.3
RθJA
Thermal Resistance, Junction to Ambient
200
357
125
PD
°C/W
Notes:
3. Device is mounted on FR-4 PCB 1.6 inch X 1.6 inch X 0.06 inch.
4. PCB size: FR-4 76 x 114 x 1.57 mm3 (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
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2
°C/W
PN2907A / MMBT2907A / PZT2907A — 60 V PNP General-Purpose Transistor
Absolute Maximum Ratings(1),(2)
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min.
Max.
Unit
Off Characteristics
V(BR)CEO Collector-Emitter Breakdown Voltage(5) IC = -10 mA, IB = 0
IC = -10 μA, IE = 0
V(BR)CBO Collector-Base Breakdown Voltage
-60
V
-60
V
Emitter-Base Breakdown Voltage
IE = -10 μA, IC = 0
-5.0
V
Base Cut-Off Current
VCE = -30 V, VEB = -0.5 V
-50
nA
ICEX
Collector Cut-Off Current
VCE = -30 V, VEB = -0.5 V
-50
nA
ICBO
Collector Cut-Off Current
V(BR)EBO
IBL
VCB = -50 V, IE = 0
-0.02
VCB = -50 V, IE = 0, TA = 150°C
-20
μA
On Characteristics
IC = -0.1 mA, VCE = -10 V
hFE
DC Current Gain
IC = -1.0 mA, VCE = -10 V
100
IC = -10 mA, VCE = -10 V
100
IC = -150 mA, VCE = -10 V(5)
100
V(5)
50
IC = -500 mA, VCE = -10
VCE(sat)
Collector-Emitter Saturation Voltage(5)
VBE(sat)
Base-Emitter Saturation Voltage
75
300
IC = -150 mA, IB = -15 mA
-0.4
IC = -500 mA, IB = -50 mA
-1.6
IC = -150 mA, IB = -15 mA(5)
-1.3
IC = -500 mA, IB = -50 mA
-2.6
V
V
Small Signal Characteristics
Current Gain - Bandwidth Product
IC = -50 mA, VCE = -20 V,
f = 100 MHz
Cob
Output Capacitance
VCB = -10 V, IE = 0,
f = 100 kHz
8.0
pF
Cib
Input Capacitance
VEB = -2.0 V, IC = 0, f = 100 kHz
30
pF
45
ns
10
ns
40
ns
100
ns
80
ns
30
ns
fT
200
MHz
Switching Characteristics
ton
Turn-On Time
td
Delay Time
tr
Rise Time
toff
Turn-Off Time
ts
Storage Time
tf
Fall Time
VCC = -30 V, IC = -150 mA,
IB1 = -15 mA
VCC = -6.0 V, IC = -150 mA,
IB1 = IB2 = -15mA
Notes:
5. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%.
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PN2907A / MMBT2907A / PZT2907A — 60 V PNP General-Purpose Transistor
Electrical Characteristics
VCESAT - COLLECTOR EMITTE R VOLTAGE (V)
VCE = 5V
400
125 °C
300
0.3
25 °C
200
100
0.3
0.1
1
3
10
30
100
I C - COLLECTOR CURRENT (mA)
300
0
125 °C
- 40 °C
1
1
25 °C
0.4
125 °C
β = 10
125 °C
VCE = 5V
0.2
0.2
1
10
100
I C - COLLECTOR CURRENT (mA)
500
0
0.1
25
20
100
CAPACITANCE (pF)
V CB = 35V
10
1
0.1
0.01
25
1
10
I C - COLLECTOR CURRE NT (mA)
Figure 4. Base-Emitter On Voltage vs.
Collector Current
Figure 3. Base-Emitter Saturation Voltage vs.
Collector Current
I CBO - COLLE CTOR CURRENT (nA)
- 40 °C
0.6
25 °C
0
500
1
0.8
- 40 °C
0.8
0.6
10
100
I C - COLLECTOR CURRE NT (mA)
Figure 2. Collector-Emitter Saturation Voltage vs.
Collector Current
Figure 1. Typical Pulsed Current Gain vs.
Collector Current
0.4
25 °C
0.2
- 40 °C
0
0.1
V BESAT - BASE EMITTER VOLTAGE (V)
β = 10
0.4
V BE( ON)- BAS E EMITTER ON VOLTAGE (V)
h FE - TYPICAL PULSED CURRENT GAIN
0.5
500
50
75
100
T A - AMBIE NT TEMP ERATURE (° C)
Figure 5. Collector Cut-Off Current vs.
Ambient Temperature
16
12
4
0
0.1
125
C ib
8
C ob
1
10
REVERSE BIAS VOLTAGE (V)
50
Figure 6. Input and Output Capacitance vs.
Reverse Bias Voltage
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PN2907A / MMBT2907A / PZT2907A — 60 V PNP General-Purpose Transistor
Typical Performance Characteristics
250
I B1 = I B2 =
I B1 = I B2 =
10
400
V cc = 15 V
ts
150
TIME (nS)
TIME (nS)
200
500
Ic
100
tr
tf
V cc = 15 V
300
200
t off
100
50
t on
td
0
10
100
I C - COLLECTOR CURRENT (mA)
0
10
1000
100
I C - COLLECTOR CURRENT (mA)
1000
Figure 8. Turn-On and Turn-Off Times vs.
Collector Current
Figure 7. Switching Times vs. Collector Current
1
50
PD - POWER DISSIPATION (W)
I B1 - TURN 0N BASE CURRENT (mA)
Ic
10
20
SOT-223
0.75
10
t r = 15 V
5
30 ns
TO-92
0.5
SOT-23
0.25
2
60 ns
1
10
100
I C - COLLECTOR CURRENT (mA)
500
0
0
25
50
75
100
TEMPERATURE ( oC)
125
Figure 10. Power Dissipation vs.
Ambient Temperature
Figure 9. Rise Time vs.
Collector and Turn-On Base Currents
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5
150
PN2907A / MMBT2907A / PZT2907A — 60 V PNP General-Purpose Transistor
Typical Performance Characteristics (Continued)
hoe
2
h re
h fe
1
0.5
h ie
0.2
0.1_
V CE = -10 V
T A = 25 oC
_
1
_
_
_
2
5
10
20
I C - COLLECTOR CURRENT (mA)
_
50
CHAR. RELATIVE TO VALUES AT TA = 25oC
Figure 11. Common Emitter Characteristics
1.5
I C = -10mA
1.4 V = -10 V
CE
1.3
1.2
CHAR. RELATIVE TO VALUES AT VCE = -10V
CHAR. RELATIVE TO VALUES AT I C= -10mA
5
1.3
1.2
1.1
1
h ie
0.9
h fe
0.8
-4
h fe
h ie
h re
hoe
1
0.8
0.7
h re
h ie
0.6
0.5
-40
h fe
-20
0
20
40
60
80
T A - AMBIENT TEMPERATURE ( o C)
I C = -10mA
T A = 25oC
-8
-12
-16
V CE - COLLECTOR VOLTAGE (V)
-20
Figure 12. Common Emitter Characteristics
1.1 hoe
0.9
h re and hoe
h re
h ie
h fe
hoe
100
Figure 13. Common Emitter Characteristics
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PN2907A / MMBT2907A / PZT2907A — 60 V PNP General-Purpose Transistor
Typical Performance Characteristics (f = 1.0 kHz)
TO-92 (Bulk)
D
Figure 14. 3-LEAD, TO92, JEDEC TO-92 COMPLIANT STRAIGHT LEAD CONFIGURATION (OLD TO92AM3)
(ACTIVE)
Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in
any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to
verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and
conditions, specifically the warranty therein, which covers ON Semiconductor products.
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7
PN2907A / MMBT2907A / PZT2907A — 60 V PNP General-Purpose Transistor
Physical Dimensions
TO-92 (Tape and Reel, Ammo)
Figure 15. 3-LEAD, TO92, MOLDED 0.200 IN LINE SPACING LEAD FORM (J61Z OPTION) (ACTIVE)
Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in
any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to
verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and
conditions, specifically the warranty therein, which covers ON Semiconductor products.
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PN2907A / MMBT2907A / PZT2907A — 60 V PNP General-Purpose Transistor
Physical Dimensions (Continued)
SOT-23
0.95
2.92±0.20
3
1.40
1.30+0.20
-0.15
1
(0.29)
2
0.95
1.90
2.20
0.60
0.37
0.20
A B
1.90
1.00
LAND PATTERN
RECOMMENDATION
SEE DETAIL A
1.20 MAX
0.10
0.00
(0.93)
0.10
C
C
2.40±0.30
NOTES: UNLESS OTHERWISE SPECIFIED
GAGE PLANE
0.23
0.08
0.25
0.20 MIN
(0.55)
SEATING
PLANE
A) REFERENCE JEDEC REGISTRATION
TO-236, VARIATION AB, ISSUE H.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS ARE INCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR EXTRUSIONS.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M - 1994.
E) DRAWING FILE NAME: MA03DREV10
SCALE: 2X
Figure 16. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE (ACTIVE)
Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in
any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to
verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and
conditions, specifically the warranty therein, which covers ON Semiconductor products.
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PN2907A / MMBT2907A / PZT2907A — 60 V PNP General-Purpose Transistor
Physical Dimensions (Continued)
SOT-223
Figure 17. MOLDED PACKAGING, SOT-223, 4-LEAD (ACTIVE)
Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in
any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to
verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and
conditions, specifically the warranty therein, which covers ON Semiconductor products.
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PN2907A / MMBT2907A / PZT2907A — 60 V PNP General-Purpose Transistor
Physical Dimensions (Continued)
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