MMBT2907ALT3G

MMBT2907ALT1G General Purpose Transistors PNP Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Collector Current − Peak (Note 3) Symbol VCEO VCBO VEBO IC ICM Value −60 −60 −5.0 −600 −1200 Unit Vdc Vdc Vdc mAdc mAdc 1 2 225 1.8 556 300 2.4 417 − 55 to +150 mW mW/°C °C/W mW mW/°C °C/W °C 1 2F = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. 3 SOT−23 (TO−236AB) CASE 318 STYLE 6 1 BASE 2 EMITTER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board (Note 1) @TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) @TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol PD Max Unit RqJA PD MARKING DIAGRAM 2F M G G RqJA TJ, Tstg Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR− 5 = 1.0  0.75  0.062 in. 2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina. 3. Reference SOA curve. ORDERING INFORMATION Device MMBT2907ALT1G MMBT2907ALT3G Package SOT−23 (Pb−Free) Shipping† 3000 Tape & Reel SOT−23 10,000 Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2011 January, 2011 − Rev. 11 1 Publication Order Number: MMBT2907ALT1/D MMBT2907ALT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note 4) (IC = −1.0 mAdc, IB = 0) (IC = −10 mAdc, IB = 0) Collector − Base Breakdown Voltage (IC = −10 mAdc, IE = 0) Emitter − Base Breakdown Voltage (IE = −10 mAdc, IC = 0) Collector Cutoff Current (VCE = −30 Vdc, VEB(off) = −0.5 Vdc) Collector Cutoff Current (VCB = −50 Vdc, IE = 0) (VCB = −50 Vdc, IE = 0, TA = 125°C) Base Cutoff Current (VCE = −30 Vdc, VEB(off) = −0.5 Vdc) ON CHARACTERISTICS DC Current Gain (IC = −0.1 mAdc, VCE = −10 Vdc) (IC = −1.0 mAdc, VCE = −10 Vdc) (IC = −10 mAdc, VCE = −10 Vdc) (IC = −150 mAdc, VCE = −10 Vdc) (IC = −500 mAdc, VCE = −10 Vdc) (Note 4) Collector − Emitter Saturation Voltage (Note 4) (IC = −150 mAdc, IB = −15 mAdc) (Note 4) (IC = −500 mAdc, IB = −50 mAdc) Base − Emitter Saturation Voltage (Note 4) (IC = −150 mAdc, IB = −15 mAdc) (IC = −500 mAdc, IB = −50 mAdc) SMALL− SIGNAL CHARACTERISTICS Current − Gain − Bandwidth Product (Notes 4, 5), (IC = −50 mAdc, VCE = −20 Vdc, f = 100 MHz) Output Capacitance (VCB = −10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = −2.0 Vdc, IC = 0, f = 1.0 MHz) SWITCHING CHARACTERISTICS Turn−On Time Delay Time Rise Time Turn−Off Time Storage Time Fall Time (VCC = −6.0 Vdc, IC = −150 mAdc, IB1 = IB2 = −15 mAdc) (VCC = −30 Vdc, IC = −150 mAdc, IB1 = −15 mAdc) ton td tr toff ts tf − − − − − − 45 10 40 100 80 30 ns fT Cobo Cibo 200 − − − 8.0 30 MHz pF hFE − 75 100 100 100 50 − − − − − − − 300 − Vdc −0.4 −1.6 Vdc −1.3 −2.6 V(BR)CEO −60 −60 −60 −5.0 − − − − − − − − −50 −0.010 −10 −50 Vdc Symbol Min Max Unit V(BR)CBO V(BR)EBO ICEX ICBO Vdc Vdc nAdc mAdc IBL nAdc VCE(sat) VBE(sat) 4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 5. fT is defined as the frequency at which |hfe| extrapolates to unity. INPUT Zo = 50 W PRF = 150 PPS RISE TIME ≤ 2.0 ns P.W. < 200 ns 0 -16 V 200 ns 50 1.0 k INPUT Zo = 50 W PRF = 150 PPS RISE TIME ≤ 2.0 ns P.W. < 200 ns 0 -30 V 200 ns +15 V -6.0 V 37 TO OSCILLOSCOPE RISE TIME ≤ 5.0 ns 1N916 -30 V 200 1.0 k 1.0 k 50 TO OSCILLOSCOPE RISE TIME ≤ 5.0 ns Figure 1. Delay and Rise Time Test Circuit Figure 2. Storage and Fall Time Test Circuit http://onsemi.com 2 MMBT2907ALT1G TYPICAL CHARACTERISTICS 1000 TJ = 150°C hFE, DC CURRENT GAIN 25°C 100 - 55°C VCE = 10 V 10 1.0 10 IC, COLLECTOR CURRENT (mA) 100 1000 Figure 3. DC Current Gain VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) -1.0 -0.8 IC = -1.0 mA -0.6 -10 mA -100 mA -500 mA -0.4 -0.2 0 -0.005 -0.01 -0.02 -0.03 -0.05 -0.07 -0.1 -0.2 -0.3 -0.5 -0.7 -1.0 IB, BASE CURRENT (mA) -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 Figure 4. Collector Saturation Region 300 200 100 70 50 30 20 td @ VBE(off) = 0 V 10 7.0 5.0 3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 IC, COLLECTOR CURRENT tr 500 VCC = -30 V IC/IB = 10 TJ = 25°C t, TIME (ns) 300 200 tf 100 70 50 30 20 2.0 V -200 -300 -500 10 7.0 5.0 -5.0 -7.0 -10 t′s = ts - 1/8 tf VCC = -30 V IC/IB = 10 IB1 = IB2 TJ = 25°C t, TIME (ns) -20 -30 -50 -70 -100 -200 -300 -500 IC, COLLECTOR CURRENT (mA) Figure 5. Turn−On Time Figure 6. Turn−Off Time http://onsemi.com 3 MMBT2907ALT1G TYPICAL SMALL− SIGNAL Characteristics NOISE FIGURE VCE = 10 Vdc, TA = 25°C 10 10 f = 1.0 kHz 8.0 NF, NOISE FIGURE (dB) IC = -1.0 mA, Rs = 430 W -500 mA, Rs = 560 W -50 mA, Rs = 2.7 kW -100 mA, Rs = 1.6 kW Rs = OPTIMUM SOURCE RESISTANCE NF, NOISE FIGURE (dB) 8.0 6.0 6.0 4.0 4.0 IC = -50 mA -100 mA -500 mA -1.0 mA 2.0 2.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k f, FREQUENCY (kHz) Rs, SOURCE RESISTANCE (OHMS) Figure 7. Frequency Effects f T, CURRENT-GAIN — BANDWIDTH PRODUCT (MHz) Figure 8. Source Resistance Effects 30 20 C, CAPACITANCE (pF) Ceb 400 300 200 10 7.0 5.0 3.0 2.0 -0.1 Ccb 100 80 60 40 30 20 -1.0 -2.0 VCE = -20 V TJ = 25°C -0.2 -0.3 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 -5.0 -10 -20 -50 -100 -200 -500 -1000 REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) Figure 9. Capacitances 1 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) IC/IB = 10 150°C 25°C −55°C 0.1 VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.001 0.01 0.1 1 0.2 Figure 10. Current−Gain − Bandwidth Product IC/IB = 10 −55°C 25°C 150°C 0.01 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 11. Collector Emitter Saturation Voltage vs. Collector Current http://onsemi.com 4 Figure 12. Base Emitter Saturation Voltage vs. Collector Current MMBT2907ALT1G TYPICAL SMALL− SIGNAL Characteristics NOISE FIGURE VCE = 10 Vdc, TA = 25°C VBE(on), BASE−EMITTER VOLTAGE (V) 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.001 0.01 0.1 1 -2.5 -0.1 -0.2 -0.5 -1.0 -2.0 150°C 25°C −55°C COEFFICIENT (mV/ ° C) VCE = 1 V +0.5 0 RqVC for VCE(sat) -0.5 -1.0 -1.5 -2.0 RqVB for VBE -5.0 -10 -20 -50 -100 -200 -500 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (mA) Figure 13. Base Emitter Voltage vs. Collector Current 10 Figure 14. Temperature Coefficients 10 ms 1 Thermal Limit IC (A) 0.1 100 ms 1s 1 ms 0.01 Single Pulse Test @ TA = 25°C 0.01 0.1 1 VCE (Vdc) 10 100 0.001 Figure 15. Safe Operating Area http://onsemi.com 5 MMBT2907ALT1G PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AP D SEE VIEW C 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX A 0.89 1.00 1.11 0.035 0.040 0.044 A1 0.01 0.06 0.10 0.001 0.002 0.004 b 0.37 0.44 0.50 0.015 0.018 0.020 c 0.09 0.13 0.18 0.003 0.005 0.007 D 2.80 2.90 3.04 0.110 0.114 0.120 E 1.20 1.30 1.40 0.047 0.051 0.055 e 1.78 1.90 2.04 0.070 0.075 0.081 L 0.10 0.20 0.30 0.004 0.008 0.012 0.35 0.54 0.69 0.014 0.021 0.029 L1 HE 2.10 2.40 2.64 0.083 0.094 0.104 q 0° −−− 10 ° 0° −−− 10° STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR E 1 2 HE c e b q 0.25 A A1 L L1 VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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