MMBT3416LT3

MMBT3416LT3 General Purpose Amplifier NPN Silicon Features • Pb−Free Package is Available http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 40 Vdc Collector −Base Voltage VEBO 4.0 Vdc IC 100 mAdc Collector Current − Continuous COLLECTOR 3 1 BASE 2 EMITTER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C Symbol Thermal Resistance, Junction−to−Ambient RqJA Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C PD Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Max Unit 225 1.8 mW mW/°C 556 °C/W PD 3 1 2 300 2.4 mW mW/°C RqJA 417 °C/W TJ, Tstg −55 to +150 °C SOT−23 (TO−236) CASE 318 STYLE 6 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. MARKING DIAGRAM GP M G G 1 GP = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping † MMBT3416LT3 SOT−23 10,000/Tape & Reel MMBT3416LT3G SOT−23 10,000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2006 February, 2006 − Rev. 1 1 Publication Order Number: MMBT3416LT3/D MMBT3416LT3 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit Collector −Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO 40 − Vdc Emitter −Base Breakdown Voltage (IE = 100 mAdc, IC = 0) V(BR)EBO 4.0 − Vdc Collector Cutoff Current (VCB = 25 Vdc, IE = 0) ICBO1 − 100 nAdc Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) IEBO − 100 nAdc DC Current Gain (IC = 2.0 mAdc, VCE = 4.5 Vdc) hFE 75 225 − Collector −Emitter Saturation Voltage (IC = 50 mAdc, IB = 3.0 mAdc) VCE(sat) − 0.3 Vdc Base −Emitter Saturation Voltage (IC = 50 mAdc, IB = 3.0 mAdc) VBE(sat) 0.6 1.3 Vdc ICBO2 − 15 mAdc hFE 75 − − OFF CHARACTERISTICS ON CHARACTERISTICS SMALL− SIGNAL CHARACTERISTICS Collector Cutoff Current (VCB = 18 Vdc, TA = 100°C) Small−Signal Current Gain (IC = 2.0 mAdc, VCE = 4.0 Vdc, f = 1 kHz) EQUIVALENT SWITCHING TIME TEST CIRCUITS +3.0 V 300 ns DUTY CYCLE = 2% 275 +10.9 V 10 < t1 < 500 ms DUTY CYCLE = 2% 10 k −0.5 V