MMBT3904TT1 General Purpose Transistors
NPN Silicon
This transistor is designed for general purpose amplifier applications. It is housed in the SOT-416/SC-75 package which is designed for low power surface mount applications.
Features
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• Pb-Free Package is Available
MAXIMUM RATINGS (TA = 25°C)
Rating Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous Symbol VCEO VCBO VEBO IC Value 40 60 6.0 200 Unit Vdc Vdc Vdc mAdc
GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT
COLLECTOR 3 1 BASE 2 EMITTER Symbol PD 200 1.6 RqJA PD 300 2.4 RqJA TJ, Tstg 400 - 55 to +150 mW mW/°C °C/W °C 600 mW mW/°C °C/W 1 3 2 SOT-416/SC-75 CASE 463 STYLE 1 Max Unit
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation, FR-4 Board (Note 1) @TA = 25°C Derated above 25°C Thermal Resistance, Junction- to- Ambient (Note 1) Total Device Dissipation, FR-4 Board (Note 2) @TA = 25°C Derated above 25°C Thermal Resistance, Junction- to- Ambient (Note 2) Junction and Storage Temperature Range
MARKING DIAGRAM
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR-4 @ Minimum Pad 2. FR-4 @ 1.0 × 1.0 Inch Pad
AM M G G 1 AM = Device Code M = Date Code* G = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location.
ORDERING INFORMATION
Device MMBT3904TT1 MMBT3904TT1G Package SOT-416 SOT-416 (Pb-Free) Shipping† 3000 Tape & Reel 3000 Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2007
1
June, 2007 - Rev. 4
Publication Order Number: MMBT3904TT1/D
MMBT3904TT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (Note 3) (IC = 1.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter-Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) ON CHARACTERISTICS (Note 3) DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) Collector-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Base-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) SMALL-SIGNAL CHARACTERISTICS Current-Gain - Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) Voltage Feedback Ratio (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) Small-Signal Current Gain (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) Output Admittance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) Noise Figure (VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k W, f = 1.0 kHz) SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (VCC = 3.0 Vdc, VBE = -0.5 Vdc) (IC = 10 mAdc, IB1 = 1.0 mAdc) (VCC = 3.0 Vdc, IC = 10 mAdc) (IB1 = IB2 = 1.0 mAdc) MMBT3904TT1 MMBT3904TT1 MMBT3904TT1 MMBT3904TT1 td tr ts tf 35 35 200 ns 50 ns fT 300 Cobo Cibo hie 1.0 hre 0.5 hfe 100 hoe 1.0 NF 5.0 40 dB 400 mmhos 8.0 10 X 10- 4 8.0 kW 4.0 pF pF MHz hFE 40 70 100 60 30 VCE(sat) VBE(sat) 0.65 0.85 0.95 0.2 0.3 Vdc 300 Vdc V(BR)CEO 40 V(BR)CBO 60 V(BR)EBO 6.0 IBL ICEX 50 50 nAdc nAdc Vdc Vdc Vdc Symbol Min Max Unit
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
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MMBT3904TT1
r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE 1.0 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.00001 0.0001 0.001 0.01 0.1 t, TIME (s) 1.0 10 100 1000
0.1
Figure 1. Normalized Thermal Response
DUTY CYCLE = 2% 300 ns
+3 V +10.9 V 10 k 275
10 < t1 < 500 ms DUTY CYCLE = 2%
t1
+3 V +10.9 V 275 10 k
0 -0.5 V < 1 ns CS < 4 pF* -9.1 V < 1 ns 1N916 CS < 4 pF*
* Total shunt capacitance of test jig and connectors
Figure 2. Delay and Rise Time Equivalent Test Circuit
Figure 3. Storage and Fall Time Equivalent Test Circuit
TYPICAL TRANSIENT CHARACTERISTICS
TJ = 25°C TJ = 125°C 10 7.0 CAPACITANCE (pF) Q, CHARGE (pC) 5.0 Cibo 3.0 2.0 Cobo 5000 3000 2000 1000 700 500 300 200 100 70 50 QT QA VCC = 40 V IC/IB = 10
1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 REVERSE BIAS VOLTAGE (VOLTS)
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
IC, COLLECTOR CURRENT (mA)
Figure 4. Capacitance
Figure 5. Charge Data
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MMBT3904TT1
500 300 200 100 70 50 30 20 10 7 5 IC/IB = 10 500 300 200 t r, RISE TIME (ns) 100 70 50 30 20 10 7 5 1.0 2.0 3.0 5.0 7.0 10 20 30 VCC = 40 V IC/IB = 10
TIME (ns)
tr @ VCC = 3.0 V
40 V 15 V td @ VOB = 0 V 1.0 2.0 3.0 5.0 7.0 10 20 30 2.0 V 50 70 100 200
50 70 100
200
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 6. Turn-On Time
500 300 200 t s, STORAGE TIME (ns) ′ 100 70 50 30 20 10 7 5 1.0 2.0 3.0 5.0 7.0 10 20 30 IC/IB = 20 IC/IB = 10 t′s = ts - 1/8 tf IB1 = IB2 t f , FALL TIME (ns) 500 300 200
Figure 7. Rise Time
VCC = 40 V IB1 = IB2 IC/IB = 20
IC/IB = 20 IC/IB = 10
100 70 50 30 20 10 7 5 1.0 2.0 3.0 5.0 7.0 10 20 30 IC/IB = 10
50 70 100
200
50 70 100
200
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 8. Storage Time
Figure 9. Fall Time
TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS
(VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
12 10 NF, NOISE FIGURE (dB) 8 6 4 2 0 0.1 SOURCE RESISTANCE = 500 W IC = 100 mA 0.2 0.4 1.0 2.0 4.0 10 20 40 100 SOURCE RESISTANCE = 200 W IC = 1.0 mA NF, NOISE FIGURE (dB) SOURCE RESISTANCE = 200 W IC = 0.5 mA SOURCE RESISTANCE = 1.0 k IC = 50 mA 14 f = 1.0 kHz 12 10 8 6 4 2 0 0.1 IC = 100 mA IC = 1.0 mA
IC = 0.5 mA IC = 50 mA
0.2
0.4
1.0
2.0
4.0
10
20
40
100
f, FREQUENCY (kHz)
RS, SOURCE RESISTANCE (k OHMS)
Figure 10. Noise Figure
Figure 11. Noise Figure
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MMBT3904TT1
h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C)
300 hoe, OUTPUT ADMITTANCE ( m mhos) 5.0 10 100 50
200 h fe , CURRENT GAIN
20 10 5
100 70 50
2 1
30 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA)
0.1
0.2
0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA)
5.0
10
Figure 12. Current Gain
20 h re , VOLTAGE FEEDBACK RATIO (X 10 -4 ) h ie , INPUT IMPEDANCE (k OHMS) 10 5.0 10 7.0 5.0 3.0 2.0
Figure 13. Output Admittance
2.0 1.0 0.5
1.0 0.7 0.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 10
0.2
0.1
0.2
0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA)
5.0
10
Figure 14. Input Impedance
Figure 15. Voltage Feedback Ratio
TYPICAL STATIC CHARACTERISTICS
h FE, DC CURRENT GAIN (NORMALIZED) 2.0 TJ = +125°C 1.0 0.7 0.5 0.3 0.2 -55 °C +25°C MMBT3904WT1 VCE = 1.0 V
0.1 0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
200
IC, COLLECTOR CURRENT (mA)
Figure 16. DC Current Gain
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MMBT3904TT1
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) 1.0 TJ = 25°C 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA
0.6
0.4
0.2
0 0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
IB, BASE CURRENT (mA)
Figure 17. Collector Saturation Region
1.2 TJ = 25°C 1.0 V, VOLTAGE (VOLTS) 0.8 VBE @ VCE =1.0 V 0.6 0.4 VCE(sat) @ IC/IB =10 0.2 0 VBE(sat) @ IC/IB =10 COEFFICIENT (mV/ °C)
1.0 0.5 qVC FOR VCE(sat) 0 -0.5 -55 °C TO +25°C -1.0 +25°C TO +125°C -1.5 -2.0 qVB FOR VBE(sat) -55 °C TO +25°C +25°C TO +125°C
1.0
2.0
5.0
10
20
50
100
200
0
20
40
60
80
100
120
140
160
180 200
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 18. “ON” Voltages
Figure 19. Temperature Coefficients
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MMBT3904TT1
PACKAGE DIMENSIONS
SC-75/SOT-416 CASE 463-01 ISSUE F
-E2 3
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS MIN NOM MAX 0.70 0.80 0.90 0.00 0.05 0.10 0.15 0.20 0.30 0.10 0.15 0.25 1.55 1.60 1.65 0.70 0.80 0.90 1.00 BSC 0.10 0.15 0.20 1.50 1.60 1.70 INCHES NOM MAX 0.031 0.035 0.002 0.004 0.008 0.012 0.006 0.010 0.063 0.067 0.031 0.035 0.04 BSC 0.004 0.006 0.008 0.061 0.063 0.065 MIN 0.027 0.000 0.006 0.004 0.059 0.027
e
1
-D-
b 3 PL 0.20 (0.008)
M
D
HE
0.20 (0.008) E
DIM A A1 b C D E e L HE
C
A L A1
STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR
SOLDERING FOOTPRINT*
0.356 0.014
1.803 0.071
0.787 0.031
0.508 0.020
1.000 0.039
SCALE 10:1 mm inches
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
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MMBT3904TT1/D