MMBT3904_NL

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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 2N3904 / MMBT3904 / PZT3904 NPN General-Purpose Amplifier Description This device is designed as a general-purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. 2N3904 PZT3904 MMBT3904 C C E E TO-92 SOT-23 EBC Mark:1A C SOT-223 B B Ordering Information Part Number Marking Package Packing Method Pack Quantity 2N3904BU 2N3904 TO-92 3L Bulk 10000 2N3904TA 2N3904 TO-92 3L Ammo 2000 2N3904TAR 2N3904 TO-92 3L Ammo 2000 2N3904TF 2N3904 TO-92 3L Tape and Reel 2000 2N3904TFR 2N3904 TO-92 3L Tape and Reel 2000 MMBT3904 1A SOT-23 3L Tape and Reel 3000 PZT3904 3904 SOT-223 4L Tape and Reel 2500 © 2002 Fairchild Semiconductor Corporation 2N3904 / MMBT3904 / PZT3904 Rev. 1.1.0 www.fairchildsemi.com 2N3904 / MMBT3904 / PZT3904 — NPN General-Purpose Amplifier October 2014 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 6.0 V 200 mA -55 to 150 °C IC TJ, TSTG Collector Current - Continuous Operating and Storage Junction Temperature Range Notes: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty cycle operations. Thermal Characteristics Values are at TA = 25°C unless otherwise noted. Symbol PD Maximum Parameter Total Device Dissipation Unit 2N3904 MMBT3904(3) PZT3904(4) 625 350 1,000 mW 2.8 8.0 mW/°C Derate Above 25°C 5.0 RθJC Thermal Resistance, Junction to Case 83.3 RθJA Thermal Resistance, Junction to Ambient 200 °C/W 357 125 °C/W Notes: 3. Device is mounted on FR-4 PCB 1.6 inch X 1.6 inch X 0.06 inch. 4. Device is mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm, mounting pad for the collector lead minimum 6 cm2. © 2002 Fairchild Semiconductor Corporation 2N3904 / MMBT3904 / PZT3904 Rev. 1.1.0 www.fairchildsemi.com 2 2N3904 / MMBT3904 / PZT3904 — NPN General-Purpose Amplifier Absolute Maximum Ratings(1), (2) Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Max. Unit OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage IC = 1.0 mA, IB = 0 V(BR)CBO Collector-Base Breakdown Voltage V(BR)EBO IBL ICEX 40 V IC = 10 μA, IE = 0 60 V Emitter-Base Breakdown Voltage IE = 10 μA, IC = 0 6.0 Base Cut-Off Current VCE = 30 V, VEB = 3 V 50 nA Collector Cut-Off Current VCE = 30 V, VEB = 3 V 50 nA V (5) ON CHARACTERISTICS hFE DC Current Gain VCE(sat) Collector-Emitter Saturation Voltage VBE(sat) Base-Emitter Saturation Voltage IC = 0.1 mA, VCE = 1.0 V 40 IC = 1.0 mA, VCE = 1.0 V 70 IC = 10 mA, VCE = 1.0 V 100 IC = 50 mA, VCE = 1.0 V 60 IC =100 mA, VCE = 1.0V 30 300 IC = 10 mA, IB = 1.0 mA 0.2 IC = 50 mA, IB = 5.0 mA 0.3 IC = 10 mA, IB = 1.0 mA 0.65 IC = 50 mA, IB = 5.0 mA 0.85 0.95 V V SMALL SIGNAL CHARACTERISTICS Current Gain - Bandwidth Product IC = 10 mA, VCE = 20 V, f = 100 MHz Cobo Output Capacitance VCB = 5.0 V, IE = 0, f = 100 kHz 4.0 pF Cibo Input Capacitance VEB = 0.5 V, IC = 0, f = 100 kHz 8.0 pF NF Noise Figure IC = 100 μA, VCE = 5.0 V, RS = 1.0 kΩ, f = 10 Hz to 15.7 kHz 5.0 dB VCC = 3.0 V, VBE = 0.5 V IC = 10 mA, IB1 = 1.0 mA 35 ns 35 ns VCC = 3.0 V, IC = 10 mA, IB1 = IB2 = 1.0 mA 200 ns 50 ns fT 300 MHz SWITCHING CHARACTERISTICS td Delay Time tr Rise Time ts Storage Time tf Fall Time Note: 5. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%. © 2002 Fairchild Semiconductor Corporation 2N3904 / MMBT3904 / PZT3904 Rev. 1.1.0 www.fairchildsemi.com 3 2N3904 / MMBT3904 / PZT3904 — NPN General-Purpose Amplifier Electrical Characteristics VCESAT- COLLECTOR-EMITTER VOLTAGE (V) h FE - TYP ICAL PULSED CURRE NT GAIN 500 V CE = 5V 400 125 °C 300 25 °C 200 - 40 °C 100 0 0.1 IC 1 10 - COLLECTOR CURRENT (mA) 100 125 °C 0.1 25 °C 0.05 0.1 125 °C VCE = 5V 1 10 - COLLECTOR CURRENT (mA) 25 °C 125 °C 0.2 0.1 100 1 10 I C - COLLECTOR CURRENT (mA) 100 Figure 4. Base-Emitter On Voltage vs. Collector Current Figure 3. Base-Emitter Saturation Voltage vs. Collector Current 10 500 f = 1.0 MHz CAPACITANCE (pF) VCB = 30V 10 1 0.1 25 - 40 °C 0.4 0.4 100 100 0.6 25 °C 0.6 0.1 1 10 I C - COLLECTOR CURRENT (mA) 1 0.8 - 40 °C IC ICBO- COLLECTOR CURRENT (nA) - 40 °C VBE(ON)- BASE-EMITTER ON VOLTAGE (V) VBESAT- BASE-EMITTER VOLTAGE (V) β = 10 0.8 β = 10 Figure 2. Collector-Emitter Saturation Voltage vs. Collector Current Figure 1. Typical Pulsed Current Gain vs. Collector Current 1 0.15 50 75 100 125 TA - AMBIENT TEMPERATURE ( °C) 4 3 C ibo 2 C obo 1 0.1 150 1 10 REVERSE BIAS VOLTAGE (V) 100 Figure 6. Capacitance vs. Reverse Bias Voltage Figure 5. Collector Cut-Off Current vs. Ambient Temperature © 2002 Fairchild Semiconductor Corporation 2N3904 / MMBT3904 / PZT3904 Rev. 1.1.0 5 www.fairchildsemi.com 4 2N3904 / MMBT3904 / PZT3904 — NPN General-Purpose Amplifier Typical Performance Characteristics 12 I C = 1.0 mA R S = 200Ω 10 V CE = 5.0V I C = 1.0 mA NF - NOISE FIGURE (dB) NF - NOISE FIGURE (dB) 12 I C = 50 μA R S = 1.0 kΩ 8 I C = 0.5 mA R S = 200Ω 6 4 2 I C = 100 μA, R S = 500 Ω 0 0.1 1 10 f - FREQUENCY (kHz) 10 I C = 5.0 mA I C = 50 μA 8 6 I C = 100 μA 4 2 0 0.1 100 Figure 7. Noise Figure vs. Frequency 1 10 R S - SOURCE RESISTANCE ( kΩ Ω) 100 Figure 8. Noise Figure vs. Source Resistance h fe θ V CE = 40V I C = 10 mA 1 10 100 f - FREQUENCY (MHz) PD - POWER DISSIPATION (W) fe h 0 20 40 60 80 100 120 140 160 180 θ - DEGREES - CURRENT GAIN (dB) 1 50 45 40 35 30 25 20 15 10 5 0 SOT-223 0.75 TO-92 0.5 SOT-23 0.25 0 1000 0 Figure 9. Current Gain and Phase Angle vs. Frequency 500 I B1 = I B2 = VCC = 40V t r - RISE TIME (ns) TIME (nS) 15V 2.0V 10 10 I C - COLLECTOR CURRENT (mA) 100 I B1 = I B2 = Ic 10 T J = 25°C T J = 125°C 5 100 1 10 I C - COLLECTOR CURRENT (mA) 100 Figure 12. Rise Time vs. Collector Current Figure 11. Turn-On Time vs. Collector Current © 2002 Fairchild Semiconductor Corporation 2N3904 / MMBT3904 / PZT3904 Rev. 1.1.0 150 10 t d @ VCB = 0V 1 125 500 Ic 10 t r @ V CC = 3.0V 5 50 75 100 TEMPERATURE (o C) Figure 10. Power Dissipation vs. Ambient Temperature 40V 100 25 www.fairchildsemi.com 5 2N3904 / MMBT3904 / PZT3904 — NPN General-Purpose Amplifier Typical Performance Characteristics (Continued) T J = 25°C I B1 = I B2 = 500 Ic I B1 = I B2 = 10 t f - FALL TIME (ns) t S - STORAGE TIME (ns) 500 100 T J = 125°C 10 5 VCC = 40V 100 T J = 25°C 10 1 10 I C - COLLECTOR CURRENT (mA) 5 100 Figure 13. Storage Time vs. Collector Current V CE = 10 V f = 1.0 kHz T A = 25oC 100 10 0.1 1 I C - COLLECTOR CURRENT (mA) 1 10 I C - COLLECTOR CURRENT (mA) 100 Figure 14. Fall Time vs. Collector Current h oe - OUTPUT ADMITTANCE ( μmhos) 500 h fe - CURRENT GAIN T J = 125°C Ic 10 100 10 V CE = 10 V f = 1.0 kHz T A = 25oC 10 1 0.1 1 I C - COLLECTOR CURRENT (mA) 10 Figure 16. Output Admittance h ie - INPUT IMPEDANCE (kΩ ) 100 h re - VOLTAGE FEEDBACK RATIO (x10 _4 ) Figure 15. Current Gain V CE = 10 V f = 1.0 kHz T A = 25oC 10 1 0.1 0.1 1 I C - COLLECTOR CURRENT (mA) 10 V CE = 10 V f = 1.0 kHz T A = 25oC 7 5 4 3 2 1 0.1 1 I C - COLLECTOR CURRENT (mA) 10 Figure 18. Voltage Feedback Ratio Figure 17. Input Impedance © 2002 Fairchild Semiconductor Corporation 2N3904 / MMBT3904 / PZT3904 Rev. 1.1.0 10 www.fairchildsemi.com 6 2N3904 / MMBT3904 / PZT3904 — NPN General-Purpose Amplifier Typical Performance Characteristics (Continued) 2N3904 / MMBT3904 / PZT3904 — NPN General-Purpose Amplifier Test Circuits 3.0 V 275 Ω 300 ns 10.6 V Duty Cycle = 2% Ω 10 KΩ 0 C1 < 4.0 pF - 0.5 V < 1.0 ns Figure 19. Delay and Rise Time Equivalent Test Circuit 3.0 V 10 < t1 < 500 μs t1 10.9 V 275 Ω Duty Cycle = 2% Ω 10 KΩ 0 C1 < 4.0 pF 1N916 - 9.1 V < 1.0 ns Figure 20. Storage and Fall Time Equivalent Test Circuit © 2002 Fairchild Semiconductor Corporation 2N3904 / MMBT3904 / PZT3904 Rev. 1.1.0 www.fairchildsemi.com 7 6.70 6.20 0.10 B C B 3.10 2.90 3.25 4 1.90 A 3.70 3.30 1 6.10 1.90 3 0.84 0.60 2.30 2.30 0.95 4.60 0.10 C B LAND PATTERN RECOMMENDATION SEE DETAIL A 1.80 MAX C 0.08 C 0.10 0.00 10° 5° GAGE PLANE R0.15±0.05 R0.15±0.05 10° TYP 0° 0.25 SEATING PLANE 10° 5° 0.60 MIN 1.70 DETAIL A SCALE: 2:1 0.35 0.20 7.30 6.70 NOTES: UNLESS OTHERWISE SPECIFIED A) DRAWING BASED ON JEDEC REGISTRATION TO-261C, VARIATION AA. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS DO NOT INCLUDE BURRS OR MOLD FLASH. MOLD FLASH OR BURRS DOES NOT EXCEED 0.10MM. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M-2009. E) LANDPATTERN NAME: SOT230P700X180-4BN F) DRAWING FILENAME: MKT-MA04AREV3 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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