MMBT3906WT1G

MMBT3904WT1, NPN MMBT3906WT1, PNP General Purpose Transistors NPN and PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT−323/SC−70 package which is designed for low power surface mount applications. Features http://onsemi.com COLLECTOR 3 • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Collector − Emitter Voltage MMBT3904WT1 MMBT3906WT1 Collector − Base Voltage MMBT3904WT1 MMBT3906WT1 MMBT3904WT1 MMBT3906WT1 Symbol VCEO Value 40 −40 60 −40 6.0 −5.0 200 −200 Unit Vdc 1 2 Vdc 3 SC−70 (SOT−323) CASE 419 STYLE 3 VCBO MARKING DIAGRAM Vdc xx M G G 1 = AM for MMBT3904WT1 = 2A for MMBT3906WT1 M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. xx Emitter − Base Voltage VEBO Collector Current − Continuous MMBT3904WT1 MMBT3906WT1 IC mAdc THERMAL CHARACTERISTICS Characteristic Total Device Dissipation (Note 1) @TA = 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol PD RqJA TJ, Tstg Max 150 833 − 55 to +150 Unit mW °C/W °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint. ORDERING INFORMATION Device MMBT3904WT1G Package Shipping† SC−70/ 3000/Tape & Reel SOT−323 (Pb−Free) SC−70/ 3000/Tape & Reel SOT−323 (Pb−Free) MMBT3906WT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2011 January, 2011 − Rev. 7 1 Publication Order Number: MMBT3904WT1/D MMBT3904WT1, NPN MMBT3906WT1, PNP ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector − Emitter Breakdown Voltage (Note 2) (IC = 1.0 mAdc, IB = 0) (IC = −1.0 mAdc, IB = 0) Collector − Base Breakdown Voltage (IC = 10 mAdc, IE = 0) (IC = −10 mAdc, IE = 0) Emitter − Base Breakdown Voltage (IE = 10 mAdc, IC = 0) (IE = −10 mAdc, IC = 0) Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) (VCE = −30 Vdc, VEB = −3.0 Vdc) Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) (VCE = −30 Vdc, VEB = −3.0 Vdc) ON CHARACTERISTICS (Note 2) DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = −0.1 mAdc, VCE = −1.0 Vdc) (IC = −1.0 mAdc, VCE = −1.0 Vdc) (IC = −10 mAdc, VCE = −1.0 Vdc) (IC = −50 mAdc, VCE = −1.0 Vdc) (IC = −100 mAdc, VCE = −1.0 Vdc) Collector − Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) (IC = −10 mAdc, IB = −1.0 mAdc) (IC = −50 mAdc, IB = −5.0 mAdc) Base − Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) (IC = −10 mAdc, IB = −1.0 mAdc) (IC = −50 mAdc, IB = −5.0 mAdc) 2. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%. MMBT3904WT1 hFE 40 70 100 60 30 60 80 100 60 30 − − − − 0.65 − −0.65 − − − 300 − − − − 300 − − 0.2 0.3 −0.25 −0.4 0.85 0.95 −0.85 −0.95 − MMBT3904WT1 MMBT3906WT1 MMBT3904WT1 MMBT3906WT1 MMBT3904WT1 MMBT3906WT1 MMBT3904WT1 MMBT3906WT1 MMBT3904WT1 MMBT3906WT1 V(BR)CEO 40 −40 60 −40 6.0 −5.0 − − − − − − − − − − 50 −50 50 −50 Vdc Symbol Min Max Unit V(BR)CBO Vdc V(BR)EBO Vdc IBL nAdc ICEX nAdc MMBT3906WT1 MMBT3904WT1 MMBT3906WT1 VCE(sat) Vdc MMBT3904WT1 MMBT3906WT1 VBE(sat) Vdc http://onsemi.com 2 MMBT3904WT1, NPN MMBT3906WT1, PNP ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic SMALL− SIGNAL CHARACTERISTICS Current − Gain − Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) (IC = −10 mAdc, VCE = −20 Vdc, f = 100 MHz) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) (VCB = −5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) (VEB = −0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) Voltage Feedback Ratio (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) Small − Signal Current Gain (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) Output Admittance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) Noise Figure (VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k W, f = 1.0 kHz) (VCE = −5.0 Vdc, IC = −100 mAdc, RS = 1.0 k W, f = 1.0 kHz) SWITCHING CHARACTERISTICS Characteristic Delay Time Rise Time Storage Time Fall Time Condition (VCC = 3.0 Vdc, VBE = − 0.5 Vdc) (VCC = −3.0 Vdc, VBE = 0.5 Vdc) (IC = 10 mAdc, IB1 = 1.0 mAdc) (IC = −10 mAdc, IB1 = −1.0 mAdc) (VCC = 3.0 Vdc, IC = 10 mAdc) (VCC = −3.0 Vdc, IC = −10 mAdc) (IB1 = IB2 = 1.0 mAdc) (IB1 = IB2 = −1.0 mAdc) MMBT3904WT1 MMBT3906WT1 MMBT3904WT1 MMBT3906WT1 MMBT3904WT1 MMBT3906WT1 MMBT3904WT1 MMBT3906WT1 Symbol td tr ts tf Min − − − − − − − − Max 35 35 35 35 200 225 50 75 ns Unit ns MMBT3904WT1 MMBT3906WT1 MMBT3904WT1 MMBT3906WT1 MMBT3904WT1 MMBT3906WT1 MMBT3904WT1 MMBT3906WT1 MMBT3904WT1 MMBT3906WT1 MMBT3904WT1 MMBT3906WT1 MMBT3904WT1 MMBT3906WT1 MMBT3904WT1 MMBT3906WT1 fT 300 250 − − − − 1.0 2.0 0.5 0.1 100 100 1.0 3.0 − − − − 4.0 4.5 8.0 10.0 10 12 8.0 10 400 400 40 60 5.0 4.0 MHz Symbol Min Max Unit Cobo pF Cibo pF hie kW hre X 10− 4 hfe − hoe mmhos NF dB MMBT3904WT1 +3 V +10.9 V 10 k 0 - 0.5 V < 1 ns CS < 4 pF* - 9.1 V < 1 ns 1N916 CS < 4 pF* 275 +3 V +10.9 V 275 10 k DUTY CYCLE = 2% 300 ns 10 < t1 < 500 ms DUTY CYCLE = 2% t1 * Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Equivalent Test Circuit Figure 2. Storage and Fall Time Equivalent Test Circuit http://onsemi.com 3 MMBT3904WT1, NPN MMBT3906WT1, PNP MMBT3904WT1 TYPICAL TRANSIENT CHARACTERISTICS TJ = 25°C TJ = 125°C 500 IC/IB = 10 300 200 t r, RISE TIME (ns) 100 70 50 30 20 10 7 5 1.0 MMBT3904WT1 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 VCC = 40 V IC/IB = 10 500 300 200 100 70 50 30 20 10 7 5 MMBT3904WT1 td @ VOB = 0 V 1.0 2.0 3.0 5.0 7.0 10 20 30 TIME (ns) tr @ VCC = 3.0 V 40 V 15 V 2.0 V 50 70 100 200 Figure 3. Turn − On Time 500 300 200 t s, STORAGE TIME (ns) ′ 100 70 50 30 20 10 7 5 1.0 MMBT3904WT1 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC/IB = 20 IC/IB = 10 t′s = ts - 1/8 tf IB1 = IB2 t f , FALL TIME (ns) 500 300 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 4. Rise Time VCC = 40 V IB1 = IB2 IC/IB = 20 IC/IB = 20 IC/IB = 10 100 70 50 30 20 10 7 5 1.0 IC/IB = 10 MMBT3904WT1 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 5. Storage Time Figure 6. Fall Time TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz) 12 10 NF, NOISE FIGURE (dB) 8 6 4 2 0 0.1 SOURCE RESISTANCE = 500 W IC = 100 mA 0.2 0.4 1.0 2.0 4.0 10 SOURCE RESISTANCE = 200 W IC = 1.0 mA NF, NOISE FIGURE (dB) SOURCE RESISTANCE = 200 W IC = 0.5 mA SOURCE RESISTANCE = 1.0 k IC = 50 mA 14 f = 1.0 kHz 12 10 8 6 4 2 MMBT3904WT1 20 40 100 0 0.1 0.2 0.4 1.0 2.0 4.0 10 MMBT3904WT1 20 40 100 IC = 100 mA IC = 1.0 mA IC = 0.5 mA IC = 50 mA f, FREQUENCY (kHz) Figure 7. Noise Figure http://onsemi.com 4 RS, SOURCE RESISTANCE (k OHMS) Figure 8. Noise Figure MMBT3904WT1, NPN MMBT3906WT1, PNP MMBT3904WT1 h PARAMETERS (VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C) 300 hoe, OUTPUT ADMITTANCE (m mhos) MMBT3904WT1 200 h fe , CURRENT GAIN 100 50 MMBT3904WT1 20 10 5 100 70 50 2 1 30 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 10 Figure 9. Current Gain 20 h re , VOLTAGE FEEDBACK RATIO (X 10 -4 ) h ie , INPUT IMPEDANCE (k OHMS) 10 5.0 MMBT3904WT1 10 7.0 5.0 3.0 2.0 Figure 10. Output Admittance MMBT3904WT1 2.0 1.0 0.5 1.0 0.7 0.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 10 0.2 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 10 Figure 11. Input Impedance Figure 12. Voltage Feedback Ratio TYPICAL STATIC CHARACTERISTICS 1000 VCE = 1 V hFE, DC CURRENT GAIN TJ = 150°C 25°C 100 - 55°C MMBT3904WT1 10 1.0 10 IC, COLLECTOR CURRENT (mA) 100 1000 Figure 13. DC Current Gain http://onsemi.com 5 MMBT3904WT1, NPN MMBT3906WT1, PNP MMBT3904WT1 VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) 1.0 MMBT3904WT1 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA TJ = 25°C 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) Figure 14. Collector Saturation Region 0.9 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.001 0.01 0.1 1 −55°C 25°C IC/IB = 10 150°C 1.4 IC/IB = 10 1.2 1.0 0.8 0.6 0.4 0.2 150°C −55°C 25°C 0.0001 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 15. Collector Emitter Saturation Voltage vs. Collector Current VBE(on), BASE−EMITTER VOLTAGE (V) 1.4 VCE = 1 V 1.2 1.0 0.8 0.6 0.4 0.2 −55°C 25°C Figure 16. Base Emitter Saturation Voltage vs. Collector Current 150°C 0.0001 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) Figure 17. Base Emitter Voltage vs. Collector Current http://onsemi.com 6 MMBT3904WT1, NPN MMBT3906WT1, PNP MMBT3904WT1 TJ = 25°C TJ = 125°C 1.0 MMBT3904WT1 0.5 COEFFICIENT (mV/ °C) qVC FOR VCE(sat) 0 - 0.5 - 55°C TO +25°C - 1.0 +25°C TO +125°C - 1.5 - 2.0 qVB FOR VBE(sat) 1.0 0.1 - 55°C TO +25°C +25°C TO +125°C CAPACITANCE (pF) 7.0 5.0 Cibo 3.0 2.0 Cobo 10 MMBT3904WT1 0 20 40 60 80 100 120 140 160 180 200 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 IC, COLLECTOR CURRENT (mA) REVERSE BIAS VOLTAGE (VOLTS) Figure 18. Temperature Coefficients 1000 fT, CURRENT−GAIN−BANDWIDTH PRODUCT (MHz) IC, COLLECTOR CURRENT (A) VCE = 1 V TA = 25°C 1 Figure 19. Capacitance 100 mS 10 mS 1S 0.1 1 mS 100 Thermal Limit 0.01 10 0.1 1 10 100 1000 0.001 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 20. Current Gain Bandwidth Product vs. Collector Current Figure 21. Safe Operating Area http://onsemi.com 7 MMBT3904WT1, NPN MMBT3906WT1, PNP MMBT3906WT1 3V + 9.1 V 275 < 1 ns 10 k CS < 4 pF* +10.6 V 300 ns DUTY CYCLE = 2% 10 < t1 < 500 ms DUTY CYCLE = 2% t1 10.9 V 0 10 k 1N916 CS < 4 pF* < 1 ns 275 3V * Total shunt capacitance of test jig and connectors Figure 22. Delay and Rise Time Equivalent Test Circuit Figure 23. Storage and Fall Time Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS TJ = 25°C TJ = 125°C 500 300 200 100 TIME (ns) 70 50 30 20 10 7 5 tr @ VCC = 3.0 V 15 V 40 V 2.0 V td @ VOB = 0 V 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) MMBT3906WT1 IC/IB = 10 500 300 200 t f , FALL TIME (ns) 100 70 50 30 20 10 7 5 IC/IB = 10 MMBT3906WT1 IC/IB = 20 VCC = 40 V IB1 = IB2 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) Figure 24. Turn − On Time Figure 25. Fall Time TYPICAL AUDIO SMALL− SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE = −5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz) 5.0 4.0 NF, NOISE FIGURE (dB) SOURCE RESISTANCE = 200 W IC = 1.0 mA NF, NOISE FIGURE (dB) SOURCE RESISTANCE = 200 W IC = 0.5 mA SOURCE RESISTANCE = 2.0 k IC = 50 mA 2.0 12 f = 1.0 kHz 10 IC = 0.5 mA 8.0 6.0 4.0 2.0 MMBT3906WT1 20 40 100 0 0.1 0.2 0.4 1.0 2.0 4.0 10 IC = 50 mA IC = 100 mA MMBT3906WT1 20 40 100 RS, SOURCE RESISTANCE (kW) IC = 1.0 mA 3.0 1.0 SOURCE RESISTANCE = 2.0 k IC = 100 mA 0.2 0.4 1.0 2.0 4.0 10 f, FREQUENCY (kHz) 0 0.1 Figure 26. http://onsemi.com 8 Figure 27. MMBT3904WT1, NPN MMBT3906WT1, PNP MMBT3906WT1 h PARAMETERS (VCE = −10 Vdc, f = 1.0 kHz, TA = 25°C) 300 MMBT3906WT1 200 hfe , CURRENT GAIN hoe, OUTPUT ADMITTANCE (m mhos) 100 70 50 30 20 MMBT3906WT1 100 70 50 10 7.0 5.0 0.1 0.2 0.5 0.7 1.0 2.0 3.0 0.3 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 30 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 Figure 28. Current Gain 20 h re , VOLTAGE FEEDBACK RATIO (X 10 -4 ) MMBT3906WT1 10 h ie , INPUT IMPEDANCE (k Ω ) 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 10 7.0 5.0 3.0 2.0 Figure 29. Output Admittance MMBT3906WT1 1.0 0.7 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 Figure 30. Input Impedance Figure 31. Voltage Feedback Ratio STATIC CHARACTERISTICS 1000 VCE = 1 V hFE, DC CURRENT GAIN TJ = 150°C 25°C 100 - 55°C MMBT3906WT1 10 1.0 10 IC, COLLECTOR CURRENT (mA) 100 1000 Figure 32. DC Current Gain http://onsemi.com 9 MMBT3904WT1, NPN MMBT3906WT1, PNP MMBT3906WT1 VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) 1.0 MMBT3906WT1 0.8 IC = 1.0 mA 0.6 10 mA 30 mA 100 mA TJ = 25°C 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 IB, BASE CURRENT (mA) 0.7 1.0 2.0 3.0 5.0 7.0 10 Figure 33. Collector Saturation Region 0.50 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 −55°C 25°C IC/IB = 10 VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 150°C 1.4 IC/IB = 10 1.2 1.0 0.8 0.6 0.4 0.2 150°C −55°C 25°C 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 34. Collector Emitter Saturation Voltage vs. Collector Current VBE(on), BASE−EMITTER VOLTAGE (V) 1.4 VCE = 1 V 1.2 1.0 0.8 0.6 0.4 0.2 150°C −55°C 25°C Figure 35. Base Emitter Saturation Voltage vs. Collector Current 0.0001 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) Figure 36. Base Emitter Voltage vs. Collector Current http://onsemi.com 10 MMBT3904WT1, NPN MMBT3906WT1, PNP MMBT3906WT1 TJ = 25°C TJ = 125°C θV, TEMPERATURE COEFFICIENTS (mV/°C) 1.0 0.5 0 -0.5 -1.0 -1.5 -2.0 1.0 0.1 MMBT3906WT1 +25°C TO +125°C qVS FOR VBE(sat) - 55°C TO +25°C qVC FOR VCE(sat) +25°C TO +125°C - 55°C TO +25°C CAPACITANCE (pF) 5.0 Cobo Cibo 3.0 2.0 10 7.0 MMBT3906WT1 0 20 40 60 80 100 120 140 IC, COLLECTOR CURRENT (mA) 160 180 200 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 REVERSE BIAS VOLTAGE (VOLTS) Figure 37. Temperature Coefficients 1000 fT, CURRENT−GAIN−BANDWIDTH PRODUCT (MHz) IC, COLLECTOR CURRENT (A) VCE = 1 V TA = 25°C 1 Figure 38. Capacitance 100 mS 10 mS 1 mS 0.1 1S Thermal Limit 0.01 100 10 0.1 1 10 100 1000 0.001 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 39. Current Gain Bandwidth Product vs. Collector Current Figure 40. Safe Operating Area http://onsemi.com 11 MMBT3904WT1, NPN MMBT3906WT1, PNP PACKAGE DIMENSIONS SC−70 (SOT−323) CASE 419−04 ISSUE N D e1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A A1 A2 b c D E e e1 L HE MIN 0.80 0.00 0.30 0.10 1.80 1.15 1.20 0.20 2.00 MILLIMETERS NOM MAX 0.90 1.00 0.05 0.10 0.70 REF 0.35 0.40 0.18 0.25 2.10 2.20 1.24 1.35 1.30 1.40 0.65 BSC 0.38 0.56 2.10 2.40 MIN 0.032 0.000 0.012 0.004 0.071 0.045 0.047 0.008 0.079 INCHES NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.015 0.083 MAX 0.040 0.004 0.016 0.010 0.087 0.053 0.055 0.022 0.095 3 HE 1 2 E b e A 0.05 (0.002) A1 A2 L c STYLE 3: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.65 0.025 0.65 0.025 1.9 0.075 0.9 0.035 0.7 0.028 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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