MMBT4124LT1G
General Purpose Transistor
NPN Silicon
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
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Compliant
COLLECTOR
3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
VCEO
25
Vdc
Collector−Base Voltage
VCBO
30
Vdc
Emitter−Base Voltage
VEBO
5.0
Vdc
IC
200
mAdc
Symbol
Max
Unit
225
1.8
W
mW/°C
556
°C/W
300
2.4
W
mW/°C
RJA
417
°C/W
TJ, Tstg
−55 to +150
°C
Collector Current − Continuous
1
BASE
2
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
FR−5 Board (Note 1) @TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Substrate (Note 2) @TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
3
PD
RJA
PD
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
1
2
SOT−23 (TO−236)
CASE 318
STYLE 6
MARKING DIAGRAM
ZC M G
G
ZC = Device Code
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may vary
depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
MMBT4124LT1G
SOT−23
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2001
October, 2016 − Rev. 3
1
Publication Order Number:
MMBT4124LT1/D
MMBT4124LT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Collector−Emitter Breakdown Voltage (Note 3)
(IC = 1.0 mAdc, IE = 0)
V(BR)CEO
25
−
Vdc
Collector−Base Breakdown Voltage
(IC = 10 Adc, IE = 0)
V(BR)CBO
30
−
Vdc
Emitter−Base Breakdown Voltage
(IE = 10 Adc, IC = 0)
V(BR)EBO
5.0
−
Vdc
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
ICBO
−
50
nAdc
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
IEBO
−
50
nAdc
120
60
360
−
OFF CHARACTERISTICS
ON CHARACTERISTICS
DC Current Gain (Note 3)
(IC = 2.0 mAdc, VCE = 1.0 Vdc)
(IC = 50 mAdc, VCE = 1.0 Vdc)
hFE
−
Collector−Emitter Saturation Voltage (Note 3)
(IC = 50 mAdc, IB = 5.0 mAdc)
VCE(sat)
−
0.3
Vdc
Base−Emitter Saturation Voltage (Note 3)
(IC = 50 mAdc, IB = 5.0 mAdc)
VBE(sat)
−
0.95
Vdc
fT
300
−
MHz
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
−
8.0
pF
Collector−Base Capacitance
(IE = 0, VCB = 5.0 V, f = 1.0 MHz)
Ccb
−
4.0
pF
Small−Signal Current Gain
(IC = 2.0 mAdc, VCE = 10 Vdc, RS = 10 k , f = 1.0 kHz)
hfe
120
480
−
Current Gain − High Frequency
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
(IC = 2.0 mAdc, VCE = 10 V, f = 1.0 kHz)
|hfe|
3.0
120
−
480
Noise Figure
(IC = 100 Adc, VCE = 5.0 Vdc, RS = 1.0 k , f = 1.0 kHz)
NF
−
5.0
SMALL− SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
−
dB
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%.
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2
MMBT4124LT1G
200
10
100
5.0
TIME (ns)
CAPACITANCE (pF)
7.0
Cibo
3.0
ts
70
50
td
30
tf
tr
20
Cobo
2.0
VCC = 3 V
IC/IB = 10
VEB(off) = 0.5 V
10.0
7.0
1.0
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
REVERSE BIAS VOLTAGE (VOLTS)
5.0
20 30 40
1.0
2.0 3.0
Figure 1. Capacitance
5.0 7.0 10
20 30 50 70 100
IC, COLLECTOR CURRENT (mA)
200
Figure 2. Switching Times
AUDIO SMALL−SIGNAL CHARACTERISTICS
NOISE FIGURE
(VCE = 5 Vdc, TA = 25°C)
Bandwidth = 1.0 Hz
12
14
SOURCE RESISTANCE = 200
IC = 1 mA
f = 1 kHz
SOURCE RESISTANCE = 200
IC = 0.5 mA
8
6
SOURCE RESISTANCE = 1 k
IC = 50 A
4
2
0
0.1
SOURCE RESISTANCE = 500
IC = 100 A
0.2
0.4
1
2
4
10
f, FREQUENCY (kHz)
IC = 1 mA
12
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
10
IC = 0.5 mA
10
IC = 50 A
8
IC = 100 A
6
4
2
20
40
0
0.1
100
Figure 3. Frequency Variations
0.2
0.4
1.0 2.0
4.0
10
20
RS, SOURCE RESISTANCE (k)
Figure 4. Source Resistance
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3
40
100
MMBT4124LT1G
h PARAMETERS
(VCE = 10 V, f = 1 kHz, TA = 25°C)
100
hoe , OUTPUT ADMITTANCE ( mhos)
hfe , CURRENT GAIN
300
200
100
70
50
30
50
20
10
5
2
1
0.1
0.2
0.5
1.0
2.0
IC, COLLECTOR CURRENT (mA)
5.0
10
0.1
0.2
Figure 5. Current Gain
h re , VOLTAGE FEEDBACK RATIO (X 10-4 )
10
hie , INPUT IMPEDANCE (kΩ )
5.0
10
5.0
10
Figure 6. Output Admittance
20
5.0
2.0
1.0
0.5
0.2
0.5
1.0
2.0
IC, COLLECTOR CURRENT (mA)
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.1
0.2
0.5
1.0
2.0
IC, COLLECTOR CURRENT (mA)
5.0
10
0.1
Figure 7. Input Impedance
0.2
0.5
1.0
2.0
IC, COLLECTOR CURRENT (mA)
Figure 8. Voltage Feedback Ratio
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4
MMBT4124LT1G
STATIC CHARACTERISTICS
h FE , DC CURRENT GAIN (NORMALIZED)
2.0
TJ = +125°C
1.0
VCE = 1 V
+25°C
0.7
-55°C
0.5
0.3
0.2
0.1
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0 7.0 10
IC, COLLECTOR CURRENT (mA)
20
30
50
70
100
200
VCE , COLLECTOR EMITTER VOLTAGE (VOLTS)
Figure 9. DC Current Gain
1.0
TJ = 25°C
0.8
IC = 1 mA
30 mA
10 mA
100 mA
0.6
0.4
0.2
0
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
IB, BASE CURRENT (mA)
0.7
1.0
2.0
3.0
5.0
7.0
10
Figure 10. Collector Saturation Region
θV, TEMPERATURE COEFFICIENTS (mV/°C)
1.2
TJ = 25°C
VBE(sat) @ IC/IB = 10
V, VOLTAGE (VOLTS)
1.0
0.8
VBE @ VCE = 1 V
0.6
0.4
VCE(sat) @ IC/IB = 10
0.2
0
1.0
2.0
5.0
10
20
50
IC, COLLECTOR CURRENT (mA)
100
1.0
0.5
0
-55°C to +25°C
-0.5
-55°C to +25°C
-1.0
+25°C to +125°C
VB for VBE(sat)
-1.5
-2.0
200
+25°C to +125°C
VC for VCE(sat)
0
Figure 11. “On” Voltages
20
40
60
80 100 120 140 160
IC, COLLECTOR CURRENT (mA)
Figure 12. Temperature Coefficients
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5
180 200
MMBT4124LT1G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
0.25
3
E
1
2
T
HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
DIM
A
A1
b
c
D
E
e
L
L1
HE
T
L
3X b
L1
VIEW C
e
TOP VIEW
A
A1
SIDE VIEW
c
SEE VIEW C
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0_
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.14
0.20
2.90
3.04
1.30
1.40
1.90
2.04
0.43
0.55
0.54
0.69
2.40
2.64
−−−
10 _
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0_
INCHES
NOM
MAX
0.039
0.044
0.002
0.004
0.017
0.020
0.006
0.008
0.114
0.120
0.051
0.055
0.075
0.080
0.017
0.022
0.021
0.027
0.094
0.104
−−−
10 _
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
3X
2.90
3X
0.90
0.95
PITCH
0.80
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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MMBT4124LT1/D
