MMBT4126LT1G

MMBT4126LT1G General Purpose Transistor PNP Silicon Features • Moisture Sensitivity Level: 1 • ESD Rating: − Human Body Model: > 4000 V • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant − Machine Model: > 400 V http://onsemi.com COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current−Continuous Symbol VCEO VCBO VEBO IC Value −25 −25 −4 −200 Unit Vdc Vdc Vdc mAdc 1 2 EMITTER 3 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board (Note 1) @TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 1) Total Device Dissipation Alumina Substrate, (Note 2) @TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 2) Junction and Storage Temperature Range Symbol PD Max 225 1.8 556 Unit mW mW/°C °C/W 2 SOT−23 CASE 318 STYLE 6 RqJA PD MARKING DIAGRAM 300 2.4 417 − 55 to +150 mW mW/°C °C/W °C RqJA TJ, Tstg C3 M G G Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR− 5 = 1.0  0.75  0.062 in. 2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina. C3 = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device MMBT4126LT1G Package SOT−23 (Pb−Free) Shipping† 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2009 August, 2009 − Rev. 2 1 Publication Order Number: MMBT4126LT1/D MMBT4126LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector − Emitter Breakdown Voltage (Note 3) (IC = −1.0 mAdc, IB = 0) Collector−Base Breakdown Voltage (IC = −10 mAdc, IE = 0) Emitter−Base Breakdown Voltage (IE = −10 mAdc, IC = 0) Collector Cutoff Current (VCE = −30 Vdc, VEB = −3.0 Vdc) ON CHARACTERISTICS (Note 3) DC Current Gain (IC = −2.0 mAdc, VCE = −1.0 Vdc) (IC = −50 mAdc, VCE = −1.0 Vdc) Collector − Emitter Saturation Voltage (IC = −50 mAdc, IB = −5.0 mAdc) Base − Emitter Saturation Voltage (IC = −50 mAdc, IB = −5.0 mAdc) SMALL− SIGNAL CHARACTERISTICS Current − Gain − Bandwidth Product (IC = −10 mAdc, VCE = −20 Vdc, f = 100 MHz) Output Capacitance (VCB = −5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = −0.5 Vdc, IC = 0, f = 1.0 MHz) Small − Signal Current Gain (IC = −2.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Noise Figure (IC = −100 mAdc, VCE = −5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz) 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. fT Cobo Cibo hfe 250 − − 120 2.5 − − 4.5 10 480 − 4.0 MHz pF pF − HFE 120 60 − − 300 − −0.4 −0.95 − V(BR)CEO V(BR)CBO V(BR)EBO ICEX −25 −25 −4 − − − Vdc − nAdc −50 Vdc Vdc Symbol Min Max Unit VCE(sat) VBE(sat) Vdc Vdc NF dB TYPICAL TRANSIENT CHARACTERISTICS TJ = 25°C TJ = 125°C 10 7.0 CAPACITANCE (pF) Q, CHARGE (pC) 5.0 Cobo Cibo 3.0 2.0 5000 3000 2000 1000 700 500 300 200 100 70 50 VCC = 40 V IC/IB = 10 QT QA 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE BIAS (VOLTS) 20 30 40 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 200 Figure 1. Capacitance Figure 2. Charge Data http://onsemi.com 2 MMBT4126LT1G TYPICAL AUDIO SMALL− SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE = − 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz) 5.0 SOURCE RESISTANCE = 200 W IC = 1.0 mA NF, NOISE FIGURE (dB) SOURCE RESISTANCE = 200 W IC = 0.5 mA SOURCE RESISTANCE = 2.0 k IC = 50 mA 12 f = 1.0 kHz 10 IC = 0.5 mA 8 6 4 2 0 IC = 50 mA IC = 100 mA IC = 1.0 mA NF, NOISE FIGURE (dB) 4.0 3.0 2.0 SOURCE RESISTANCE = 2.0 k IC = 100 mA 0.2 0.4 1.0 2.0 4.0 10 f, FREQUENCY (kHz) 20 40 100 1.0 0 0.1 0.1 0.2 0.4 1.0 2.0 4.0 10 20 Rg, SOURCE RESISTANCE (k OHMS) 40 100 Figure 3. Figure 4. h PARAMETERS (VCE = − 10 Vdc, f = 1.0 kHz, TA = 25°C) 300 hoe, OUTPUT ADMITTANCE ( m mhos) 5.0 7.0 10 100 70 50 30 20 h fe , DC CURRENT GAIN 200 100 70 50 10 7 30 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 Figure 5. Current Gain 20 h re , VOLTAGE FEEDBACK RATIO (X 10 -4 ) h ie , INPUT IMPEDANCE (k OHMS) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 10 7.0 5.0 3.0 2.0 Figure 6. Output Admittance 1.0 0.7 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 Figure 7. Input Impedance Figure 8. Voltage Feedback Ratio http://onsemi.com 3 MMBT4126LT1G TYPICAL STATIC CHARACTERISTICS 2.0 h FE, DC CURRENT GAIN (NORMALIZED) TJ = +125°C +25°C - 55°C VCE = 1.0 V 1.0 0.7 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 20 30 50 70 100 200 Figure 9. DC Current Gain VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) 1.0 TJ = 25°C 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 IB, BASE CURRENT (mA) 0.7 1.0 2.0 3.0 5.0 7.0 10 Figure 10. Collector Saturation Region TJ = 25°C 0.8 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 10 VBE @ VCE = 1.0 V q V , TEMPERATURE COEFFICIENTS (mV/ °C) 1.0 1.0 0.5 0 - 0.5 +25°C TO +125°C - 1.0 - 55°C TO +25°C - 1.5 - 2.0 qVB FOR VBE(sat) qVC FOR VCE(sat) +25°C TO +125°C - 55°C TO +25°C 0.6 0.4 VCE(sat) @ IC/IB = 10 0.2 0 1.0 2.0 50 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 200 0 20 40 60 80 100 120 140 IC, COLLECTOR CURRENT (mA) 160 180 200 Figure 11. “ON” Voltages Figure 12. Temperature Coefficients http://onsemi.com 4 MMBT4126LT1G PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN D SEE VIEW C 3 E 1 2 HE c e b q 0.25 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 A A1 L L1 VIEW C DIM A A1 b c D E e L L1 HE MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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