MMBT4401WT1G
Switching Transistor
NPN Silicon
Features
• Moisture Sensitivity Level: 1
• ESD Rating: Human Body Model; 4 kV,
•
•
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Machine Model; 400 V
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
COLLECTOR
3
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
VCEO
40
Vdc
Collector−Base Voltage
VCBO
60
Vdc
Emitter−Base Voltage
VEBO
6.0
Vdc
IC
600
mAdc
Symbol
Max
Unit
PD
150
mW
RqJA
833
°C/W
TJ, Tstg
−55 to +150
°C
Collector Current − Continuous
3
1
SC−70 (SOT−323)
CASE 419
STYLE 3
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR−5 Board
TA = 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
2
MARKING DIAGRAM
2X MG
G
1
(Note: Microdot may be in either location)
*Date Code orientation may vary depending upon
manufacturing location.
ORDERING INFORMATION
Package
Shipping†
MMBT4401WT1G
SC−70
(Pb−Free)
3000 / Tape &
Reel
NSVMMBT4401WT1G
SC−70
(Pb−Free)
3000 / Tape &
Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
June, 2019 − Rev. 5
1
Publication Order Number:
MMBT4401WT1/D
MMBT4401WT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Max
Unit
Collector−Emitter Breakdown Voltage (Note 1) (IC = 1.0 mAdc, IB = 0)
V(BR)CEO
40
−
Vdc
Collector−Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0)
V(BR)CBO
60
−
Vdc
Emitter−Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0)
V(BR)EBO
6.0
−
Vdc
IBEV
−
0.1
mAdc
20
40
80
100
40
−
−
−
300
−
−
−
0.4
0.75
0.75
−
0.95
1.2
ICEX
−
0.1
mAdc
fT
250
−
MHz
Collector−Base Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Ccb
−
6.5
pF
Emitter−Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Ceb
−
30
pF
Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hie
1.0
15
kW
Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hre
0.1
8.0
X 10− 4
Small−Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
40
500
−
Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hoe
1.0
30
mmhos
(VCC = 30 Vdc, VEB = 2.0 Vdc,
IC = 150 mAdc, IB1 = 15 mAdc)
td
−
15
tr
−
20
(VCC = 30 Vdc, IC = 150 mAdc,
IB1 = IB2 = 15 mAdc)
ts
−
225
tf
−
30
Characteristic
OFF CHARACTERISTICS
Base Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc)
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 150 mAdc, VCE = 1.0 Vdc)
(IC = 500 mAdc, VCE = 2.0 Vdc)
hFE
Collector−Emitter Saturation Voltage
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
VCE(sat)
Base−Emitter Saturation Voltage
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
VBE(sat)
Collector Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc)
−
Vdc
Vdc
SMALL− SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product (IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
ns
ns
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+30 V
+30 V
+16 V
0
-2.0 V
1.0 to 100 ms,
DUTY CYCLE ≈ 2.0%
200 W
+16 V
1.0 to 100 ms,
DUTY CYCLE ≈ 2.0%
200 W
0
1.0 kW
< 2.0 ns
1.0 kW
-14 V
CS* < 10 pF
< 20 ns
-4.0 V
Scope rise time < 4.0 ns
*Total shunt capacitance of test jig connectors, and oscilloscope
Figure 1. Turn−On Time
Figure 2. Turn−Off Time
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2
CS* < 10 pF
MMBT4401WT1G
TRANSIENT CHARACTERISTICS
25°C
100°C
30
10
7.0
5.0
10
7.0
5.0
QT
2.0
1.0
0.7
0.5
0.3
0.2
Ccb
3.0
2.0
0.1
VCC = 30 V
IC/IB = 10
3.0
Cobo
Q, CHARGE (nC)
CAPACITANCE (pF)
20
QA
0.1
0.2 0.3 0.5
1.0
2.0 3.0 5.0
10
REVERSE VOLTAGE (VOLTS)
20 30
50
10
20
30
50 70 100
200
IC, COLLECTOR CURRENT (mA)
Figure 3. Capacitances
100
IC/IB = 10
70
VCC = 30 V
IC/IB = 10
70
tr
50
50
tr @ VCC = 30 V
tr @ VCC = 10 V
td @ VEB = 2.0 V
td @ VEB = 0
30
20
t, TIME (ns)
t, TIME (ns)
500
Figure 4. Charge Data
100
tf
30
20
10
10
7.0
7.0
5.0
5.0
10
20
30
50
70
100
200
300
500
10
20
30
50
70
100
200
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 5. Turn−On Time
Figure 6. Rise and Fall Times
300
300
500
100
ts′ = ts - 1/8 tf
IB1 = IB2
IC/IB = 10 to 20
VCC = 30 V
IB1 = IB2
70
50
t f , FALL TIME (ns)
200
t s′, STORAGE TIME (ns)
300
100
70
IC/IB = 20
30
20
IC/IB = 10
10
50
7.0
30
5.0
10
20
30
50
70
100
200
300
500
10
20
30
50
70
100
200
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 7. Storage Time
Figure 8. Fall Time
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3
300
500
MMBT4401WT1G
SMALL−SIGNAL CHARACTERISTICS NOISE FIGURE
VCE = 10 Vdc, TA = 25°C; Bandwidth = 1.0 Hz
10
10
IC = 1.0 mA, RS = 150 W
IC = 500 mA, RS = 200 W
IC = 100 mA, RS = 2.0 kW
IC = 50 mA, RS = 4.0 kW
8.0
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
8.0
f = 1.0 kHz
RS = OPTIMUM
RS = SOURCE
RS = RESISTANCE
6.0
4.0
IC = 50 mA
IC = 100 mA
IC = 500 mA
IC = 1.0 mA
6.0
4.0
2.0
2.0
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0
f, FREQUENCY (kHz)
0
10
20
50
50
100
100 200
500 1.0k 2.0k 5.0k 10k 20k
RS, SOURCE RESISTANCE (OHMS)
50k 100k
Figure 10. Source Resistance Effects
Figure 9. Frequency Effects
h PARAMETERS
VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C
This group of graphs illustrates the relationship between hfe and other “h” parameters for this series of transistors. To obtain
these curves, a high−gain and a low−gain unit were selected from the MMBT4401WT1 lines, and the same units were used
to develop the correspondingly numbered curves on each graph.
300
50k
hie , INPUT IMPEDANCE (OHMS)
hfe , CURRENT GAIN
200
100
MMBT4401LT1 UNIT 1
MMBT4401LT1 UNIT 2
70
50
30
0.1
0.2
0.3
0.5 0.7 1.0
2.0
3.0
10k
5.0k
2.0k
1.0k
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 11. Current Gain
Figure 12. Input Impedance
10
5.0 7.0 10
100
7.0
5.0
MMBT4401LT1 UNIT 1
MMBT4401LT1 UNIT 2
3.0
2.0
1.0
0.7
0.5
0.3
0.2
20k
500
5.0 7.0 10
hoe , OUTPUT ADMITTANCE (m mhos)
h re , VOLTAGE FEEDBACK RATIO (X 10-4 )
20
MMBT4401LT1 UNIT 1
MMBT4401LT1 UNIT 2
0.1
0.2
0.3
0.5 0.7 1.0
2.0
3.0
50
20
10
2.0
1.0
0.1
5.0 7.0 10
MMBT4401LT1 UNIT 1
MMBT4401LT1 UNIT 2
5.0
0.2
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 13. Voltage Feedback Ratio
Figure 14. Output Admittance
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4
5.0 7.0 10
MMBT4401WT1G
STATIC CHARACTERISTICS
1000
1000
VCE = 1 V
hFE, DC CURRENT GAIN
TA = 150°C
TA = 25°C
TA = −55°C
100
10
0.1
1
10
100
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
TA = 25°C
100
10
1000
TA = 25°C
1 mA
10 mA
100 mA
IC = 600 mA
0.2
0.001
0.01
0.1
1
10
100
TA = −55°C
TA = 25°C
TA = 150°C
0.1
1
10
100
1000
Figure 17. Saturation Region
Figure 18. Collector Emitter Saturation Voltage
vs. Collector Current
1.0
IC/IB = 10
0.9
VBE(ON), BASE−EMITTER
ON VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
0.2
IC, COLLECTOR CURRENT (mA)
1.0
TA = −55°C
TA = 25°C
0.5
0.3
0.2
1000
IC/IB = 10
0.02
1.2
0.4
100
IB, BASE CURRENT (mA)
1.1
0.6
10
Figure 16. DC Current Gain vs. Collector
Current
0.4
0.7
1
Figure 15. DC Current Gain vs. Collector
Current
0.6
0.8
0.1
IC, COLLECTOR CURRENT (mA)
0.8
0.9
TA = −55°C
IC, COLLECTOR CURRENT (mA)
1.0
0
TA = 150°C
VCE, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
VCE = 10 V
TA = 150°C
TA = −55°C
0.8
0.7
TA = 25°C
0.6
0.5
0.4
TA = 150°C
0.3
0.1
1
10
100
1000
0.2
VCE = 1 V
0.1
1
10
100
1000
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 19. Base Emitter Saturation Voltage vs.
Collector Current
Figure 20. Base Emitter Turn−ON Voltage vs.
Collector Current
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5
MMBT4401WT1G
1000
+0.5
1s
qVC for VCE(sat)
IC, COLLECTOR CURRENT (mA)
COEFFICIENT (mV/ °C)
0
-0.5
-1.0
-1.5
-2.0
-2.5
0.1 0.2
qVB for VBE
0.5
50
1.0 2.0
5.0 10 20
IC, COLLECTOR CURRENT (mA)
100 200
10
Single Pulse Test
at TA = 25°C
10
VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 21. Temperature Coefficients
Figure 22. Safe Operating Area
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6
0.1 ms
100
1.0
1.0
500
100 ms 10 ms 1 ms
100
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419
ISSUE R
DATE 11 OCT 2022
SCALE 4:1
GENERIC
MARKING DIAGRAM
XX MG
G
1
XX
M
G
= Specific Device Code
= Date Code
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
STYLE 1:
CANCELLED
STYLE 6:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
DOCUMENT NUMBER:
DESCRIPTION:
STYLE 2:
PIN 1. ANODE
2. N.C.
3. CATHODE
STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 4:
PIN 1. CATHODE
2. CATHODE
3. ANODE
STYLE 5:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 7:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 8:
PIN 1. GATE
2. SOURCE
3. DRAIN
STYLE 9:
PIN 1. ANODE
2. CATHODE
3. CATHODE-ANODE
STYLE 10:
PIN 1. CATHODE
2. ANODE
3. ANODE-CATHODE
98ASB42819B
SC−70 (SOT−323)
STYLE 11:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
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