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or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
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Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
MMBT4403M3T5G
PNP Switching Transistor
The MMBT4403M3T5G device is a spin−off of our popular
SOT−23 three−leaded device. It is designed for general purpose
switching applications and is housed in the SOT−723 surface mount
package. This device is ideal for low−power surface mount
applications where board space is at a premium.
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Features
• Reduces Board Space
• This is a Halide−Free Device
• This is a Pb−Free Device
COLLECTOR
3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
VCEO
−40
Vdc
Collector −Base Voltage
VCBO
−40
Vdc
Emitter−Base Voltage
VEBO
−5.0
Vdc
IC
−600
mAdc
Symbol
Max
Unit
Collector Current − Continuous
1
BASE
2
EMITTER
MARKING
DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
FR−5 Board (Note 1)
TA = 25°C
Derate above 25°C
PD
Thermal Resistance,
Junction−to−Ambient
RqJA
470
°C/W
PD
640
mW
5.1
mW/°C
RqJA
195
°C/W
TJ, Tstg
−55 to
+150
°C
Total Device Dissipation
Alumina Substrate, (Note 2) TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
265
2.1
mW
mW/°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
© Semiconductor Components Industries, LLC, 2009
January, 2009 − Rev. 0
3
1
2
1
AG
M
SOT−723
CASE 631AA
STYLE 1
AG M
= Specific Device Code
= Date Code
ORDERING INFORMATION
Device
MMBT4403M3T5G
Package
Shipping†
SOT−723 8000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
MMBT4403M3/D
MMBT4403M3T5G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 3)
(IC = −1.0 mAdc, IB = 0)
V(BR)CEO
−40
−
Vdc
Collector −Base Breakdown Voltage
(IC = −0.1 mAdc, IE = 0)
V(BR)CBO
−40
−
Vdc
Emitter−Base Breakdown Voltage
(IE = −0.1 mAdc, IC = 0)
V(BR)EBO
−5.0
−
Vdc
Base Cutoff Current
(VCE = −35 Vdc, VEB = −0.4 Vdc)
IBEV
−
−0.1
mAdc
Collector Cutoff Current
(VCE = −35 Vdc, VEB = −0.4 Vdc)
ICEX
−
−0.1
mAdc
30
60
100
100
20
−
−
−
300
−
−
−
−
−0.4
−0.75
−0.75
−
−0.95
−1.3
fT
200
−
MHz
ON CHARACTERISTICS
DC Current Gain
(IC = −0.1 mAdc, VCE = −1.0 Vdc)
(IC = −1.0 mAdc, VCE = −1.0 Vdc)
(IC = −10 mAdc, VCE = −1.0 Vdc)
(IC = −150 mAdc, VCE = −2.0 Vdc)
(IC = −500 mAdc, VCE = −2.0 Vdc)
(Note 3)
(Note 3)
Collector −Emitter Saturation Voltage (Note 3)
Base −Emitter Saturation Voltage (Note 3)
(IC = −150 mAdc, IB = −15 mAdc)
(IC = −500 mAdc, IB = −50 mAdc)
(IC = −150 mAdc, IB = −15 mAdc)
(IC = −500 mAdc, IB = −50 mAdc)
hFE
VCE(sat)
VBE(sat)
Vdc
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = −20 mAdc, VCE = −10 Vdc, f = 100 MHz)
Collector−Base Capacitance
(VCB = −10 Vdc, IE = 0, f = 1.0 MHz)
Ccb
−
8.5
pF
Emitter−Base Capacitance
(VBE = −0.5 Vdc, IC = 0, f = 1.0 MHz)
Ceb
−
30
pF
Input Impedance
(IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz)
hie
1.5
15
kW
Voltage Feedback Ratio
(IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz)
hre
0.1
8.0
X 10− 4
Small −Signal Current Gain
(IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz)
hfe
60
500
−
Output Admittance
(IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz)
hoe
1.0
100
mMhos
(VCC = −30 Vdc, VEB = −2.0 Vdc,
IC = −150 mAdc, IB1 = −15 mAdc)
td
−
15
tr
−
20
(VCC = −30 Vdc, IC = −150 mAdc,
IB1 = IB2 = −15 mAdc)
ts
−
225
tf
−
30
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
ns
ns
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
SWITCHING TIME EQUIVALENT TEST CIRCUIT
-30 V
-30 V
200 W
< 2 ns
+2 V
+14 V
0
0
1.0 kW
-16 V
200 W
< 20 ns
1.0 kW
CS* < 10 pF
-16 V
10 to 100 ms,
DUTY CYCLE = 2%
1.0 to 100 ms,
DUTY CYCLE = 2%
+4.0 V
Scope rise time < 4.0 ns
*Total shunt capacitance of test jig connectors, and oscilloscope
Figure 1. Turn−On Time
Figure 2. Turn−Off Time
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2
CS* < 10 p
MMBT4403M3T5G
STATIC CHARACTERISTICS
450
VCE = 5.0 V
VCE = 2.0 V
VCE = 1.0 V
h FE , DC CURRENT GAIN
400
350
TJ = 150°C
300
250
25°C
200
150
100
-55°C
50
0.001
0.0001
0.01
IC, COLLECTOR CURRENT (A)
0.1
1
Figure 3. DC Current Gain
VCE, COLLECTOR-EMITTER VOLTAGE (V)
1.2
IC = 1.0 mA
10 mA
100 mA
500 mA
1.0
0.8
0.6
0.4
0.2
0
0.001
0.01
0.1
10
1
100
Ib, BASE CURRENT (mA)
0.35
0.5
IC/IB = 10
0.30
0
COEFFICIENT (mV/ °C)
VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE (V)
Figure 4. Collector Saturation Region
0.25
150°C
0.20
25°C
0.15
0.10
qVC for VCE(sat)
0.5
1.0
1.5
-55°C
qVS for VBE
2.0
0.05
0
0.0001
0.1
0.001
0.01
IC, COLLECTOR CURRENT (A)
2.5
0.1 0.2
1
Figure 5. Collector−Emitter Saturation Voltage
vs. Collector Current
0.5
50 100 200
1.0 2.0 5.0 10 20
IC, COLLECTOR CURRENT (mA)
Figure 6. Temperature Coefficients
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3
500
MMBT4403M3T5G
1.0
1.0
IC/IB = 10
VBE(on), BASE−EMITTER TURN ON
VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
1.1
0.9
0.8
−55°C
0.7
0.6
25°C
0.5
0.4
0.3
150°C
0.0001
0.001
0.01
0.1
1
VCE = 2.0 V
0.9
−55°C
0.8
0.7
25°C
0.6
0.5
0.4
150°C
0.3
0.2
0.0001
0.001
IC, COLLECTOR CURRENT (A)
Figure 7. Base−Emitter Saturation Voltage vs.
Collector Current
1
15
Cobo, OUTPUT CAPACITANCE (pF)
Cibo, INPUT CAPACITANCE (pF)
0.1
Figure 8. Base−Emitter Turn On Voltage vs.
Collector Current
40
35
30
25
20
15
10
0.01
IC, COLLECTOR CURRENT (A)
0
1
2
3
4
5
6
13
11
9
7
5
3
0
Veb, EMITTER BASE VOLTAGE (V)
5
10
15
20
25
30
35
Vcb, COLLECTOR BASE VOLTAGE (V)
Figure 9. Input Capacitance vs. Emitter Base
Voltage
Figure 10. Output Capacitance vs. Collector
Base Voltage
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4
40
MMBT4403M3T5G
PACKAGE DIMENSIONS
SOT−723
CASE 631AA−01
ISSUE C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
−X−
D
b1
A
−Y−
3
1
e
2
E
HE
L
b 2X
0.08 (0.0032) X Y
C
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
DIM
A
b
b1
C
D
E
e
HE
L
MILLIMETERS
MIN
NOM
MAX
0.45
0.50
0.55
0.15
0.21
0.27
0.25
0.31
0.37
0.07
0.12
0.17
1.15
1.20
1.25
0.75
0.80
0.85
0.40 BSC
1.15
1.20
1.25
0.15
0.20
0.25
INCHES
MIN
NOM
MAX
0.018 0.020 0.022
0.0059 0.0083 0.0106
0.010 0.012 0.015
0.0028 0.0047 0.0067
0.045 0.047 0.049
0.03 0.032 0.034
0.016 BSC
0.045 0.047 0.049
0.0059 0.0079 0.0098
SOLDERING FOOTPRINT*
0.40
0.0157
0.40
0.0157
1.0
0.039
0.40
0.0157
0.40
0.0157
0.40
0.0157
SCALE 20:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
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5
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
MMBT4403M3/D
