MMBT5770

MMBT5770

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    SOT-23

  • 描述:

    TRANSISTOR RF NPN SOT-23

  • 数据手册
  • 价格&库存
MMBT5770 数据手册
MMBT5770 NPN RF Transistor • This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. • Sourced from process 43. 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 4.5 V IC Collector Current 10 mA TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C - Continuous Thermal Characteristics Ta=25°C unless otherwise noted Max. Units PD Symbol Total Device Dissipation Derate above 25°C Parameter 225 1.8 mW mW/°C RθJA Thermal Resistance, Junction to Ambient 556 °C/W * Device mounted on FR-4PCB 1.6” × 1.6” × 0.06”. Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition Min. Max. Units Off Characteristics V(BR)CBO Collector-Base Breakdown Voltage IC = 1.0 μA, IE = 0 30 V VCEO(sus) Collector-Emitter Sustaining Voltage* IC = 3.0 mA, IB = 0 15 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 μA, IC = 0 3 ICBO Collector-Cutoff Current VCB = 15 V, IE = 0 V 50 nA On Characteristics * hFE DC Current Gain VCE = 1.0V, IC = 3.0mA VCE (sat) Collector-Emitter Saturation Voltage IC = 10mA, IB = 1.0mA 30 0.4 V VBE (sat) Base-Emitter Saturation Voltage IC = 10mA, IB = 1.0mA 1.0 V Small Signal Characteristics fT Current Gain Bandwidth Product IC = 4.0mA, VCE = 10V, f = 100MHz 600 MHz * Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% © 2007 Fairchild Semiconductor Corporation MMBT5770 Rev. 1.0.0 www.fairchildsemi.com 1 MMBT5770 — NPN RF Transistor February 2008 MMBT5770 — NPN RF Transistor Typical Characteristics © 2007 Fairchild Semiconductor Corporation MMBT5770 Rev. 1.0.0 www.fairchildsemi.com 2 MMBT5770 — NPN RF Transistor Typical Characteristics (continued) © 2007 Fairchild Semiconductor Corporation MMBT5770 Rev. 1.0.0 www.fairchildsemi.com 3 MMBT5770 — NPN RF Transistor Typical Characteristics (continued) © 2007 Fairchild Semiconductor Corporation MMBT5770 Rev. 1.0.0 www.fairchildsemi.com 4 MMBT5770 — NPN RF Transistor Typical Characteristics (continued) © 2007 Fairchild Semiconductor Corporation MMBT5770 Rev. 1.0.0 www.fairchildsemi.com 5 The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx® Build it Now™ CorePLUS™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® Power247® POWEREDGE® Power-SPM™ PowerTrench® Programmable Active Droop™ QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 Green FPS™ Green FPS™ e-Series™ GTO™ i-Lo™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FPS™ FRFET® Global Power ResourceSM ® PDP-SPM™ Power220® SuperSOT™-8 SyncFET™ The Power Franchise® TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™ UHC® UniFET™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. 2. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I31 © 2007 Fairchild Semiconductor Corporation MMBT5770 Rev. 1.0.0 www.fairchildsemi.com 6 MMBT5770 NPN RF Transistor TRADEMARKS
MMBT5770 价格&库存

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