MMBT5770
NPN RF Transistor
• This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range.
• Sourced from process 43.
3
2
1
SOT-23
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings
Symbol
Ta = 25°C unless otherwise noted
Parameter
Value
Units
VCBO
Collector-Base Voltage
30
V
VCEO
Collector-Emitter Voltage
15
V
VEBO
Emitter-Base Voltage
4.5
V
IC
Collector Current
10
mA
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
- Continuous
Thermal Characteristics Ta=25°C unless otherwise noted
Max.
Units
PD
Symbol
Total Device Dissipation
Derate above 25°C
Parameter
225
1.8
mW
mW/°C
RθJA
Thermal Resistance, Junction to Ambient
556
°C/W
* Device mounted on FR-4PCB 1.6” × 1.6” × 0.06”.
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min.
Max.
Units
Off Characteristics
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 1.0 μA, IE = 0
30
V
VCEO(sus)
Collector-Emitter Sustaining Voltage*
IC = 3.0 mA, IB = 0
15
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 10 μA, IC = 0
3
ICBO
Collector-Cutoff Current
VCB = 15 V, IE = 0
V
50
nA
On Characteristics *
hFE
DC Current Gain
VCE = 1.0V, IC = 3.0mA
VCE (sat)
Collector-Emitter Saturation Voltage
IC = 10mA, IB = 1.0mA
30
0.4
V
VBE (sat)
Base-Emitter Saturation Voltage
IC = 10mA, IB = 1.0mA
1.0
V
Small Signal Characteristics
fT
Current Gain Bandwidth Product
IC = 4.0mA, VCE = 10V, f = 100MHz
600
MHz
* Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
© 2007 Fairchild Semiconductor Corporation
MMBT5770 Rev. 1.0.0
www.fairchildsemi.com
1
MMBT5770 — NPN RF Transistor
February 2008
MMBT5770 — NPN RF Transistor
Typical Characteristics
© 2007 Fairchild Semiconductor Corporation
MMBT5770 Rev. 1.0.0
www.fairchildsemi.com
2
MMBT5770 — NPN RF Transistor
Typical Characteristics (continued)
© 2007 Fairchild Semiconductor Corporation
MMBT5770 Rev. 1.0.0
www.fairchildsemi.com
3
MMBT5770 — NPN RF Transistor
Typical Characteristics (continued)
© 2007 Fairchild Semiconductor Corporation
MMBT5770 Rev. 1.0.0
www.fairchildsemi.com
4
MMBT5770 — NPN RF Transistor
Typical Characteristics (continued)
© 2007 Fairchild Semiconductor Corporation
MMBT5770 Rev. 1.0.0
www.fairchildsemi.com
5
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
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Full Production
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve design.
Obsolete
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This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I31
© 2007 Fairchild Semiconductor Corporation
MMBT5770 Rev. 1.0.0
www.fairchildsemi.com
6
MMBT5770 NPN RF Transistor
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