MMBT6427LT1G_09

MMBT6427LT1G Darlington Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Symbol VCEO VCBO VEBO IC Value 40 40 12 500 Unit Vdc Vdc Vdc mAdc http://onsemi.com COLLECTOR 3 BASE 1 EMITTER 2 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 556 300 2.4 417 −55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C 1 1V M G G 1 2 3 RqJA PD SOT−23 (TO−236) CASE 318 STYLE 6 MARKING DIAGRAM RqJA TJ, Tstg Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 1V = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device MMBT6427LT1G Package Shipping† SOT−23 3,000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2009 August, 2009 − Rev. 3 1 Publication Order Number: MMBT6427LT1/D MMBT6427LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector − Emitter Breakdown Voltage (IC = 10 mAdc, VBE = 0) Collector − Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter − Base Breakdown Voltage (IC = 10 mAdc, IC = 0) Collector Cutoff Current (VCE = 25 Vdc, IB = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) Emitter Cutoff Current (VEB = 10 Vdc, IC = 0) ON CHARACTERISTICS DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) (IC = 100 mAdc, VCE = 5.0 Vdc) (IC = 500 mAdc, VCE = 5.0 Vdc) Collector − Emitter Saturation Voltage (IC = 50 mAdc, IB = 0.5 mAdc) (IC = 500 mAdc, IB = 0.5 mAdc) Base − Emitter Saturation Voltage (IC = 500 mAdc, IB = 0.5 mAdc) Base − Emitter On Voltage (IC = 50 mAdc, VCE = 5.0 Vdc) SMALL− SIGNAL CHARACTERISTICS Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Current Gain − High Frequency (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) Noise Figure (IC = 1.0 mAdc, VCE = 5.0 Vdc, RS = 100 kW, f = 1.0 kHz) 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. Cobo Cibo |hfe| NF − − 1.3 − 7.0 15 − 10 pF pF Vdc dB hFE 10,000 20,000 14,000 − − − − 100,000 200,000 140,000 1.2 1.5 2.0 1.75 − V(BR)CEO V(BR)CBO V(BR)EBO ICES ICBO IEBO 40 40 12 − − − − − − 1.0 50 50 Vdc Vdc Vdc mAdc nAdc nAdc Symbol Min Max Unit VCE(sat)(3) Vdc VBE(sat) VBE(on) Vdc Vdc RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model http://onsemi.com 2 MMBT6427LT1G NOISE CHARACTERISTICS (VCE = 5.0 Vdc, TA = 25°C) 500 200 en, NOISE VOLTAGE (nV) 100 10 mA 50 100 mA 20 IC = 1.0 mA 10 5.0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k f, FREQUENCY (Hz) 50 k 100 k BANDWIDTH = 1.0 Hz RS ≈ 0 i n, NOISE CURRENT (pA) 2.0 BANDWIDTH = 1.0 Hz 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k f, FREQUENCY (Hz) 50 k 100 k 100 mA 10 mA IC = 1.0 mA Figure 2. Noise Voltage Figure 3. Noise Current VT, TOTAL WIDEBAND NOISE VOLTAGE (nV) 200 14 BANDWIDTH = 10 Hz TO 15.7 kHz 12 NF, NOISE FIGURE (dB) 100 70 50 30 20 BANDWIDTH = 10 Hz TO 15.7 kHz IC = 10 mA 10 10 mA 8.0 6.0 4.0 2.0 0 1.0 IC = 1.0 mA 100 mA 100 mA 1.0 mA 10 1.0 2.0 5.0 10 20 50 100 200 RS, SOURCE RESISTANCE (kW) 500 1000 2.0 5.0 10 20 50 100 200 RS, SOURCE RESISTANCE (kW) 500 1000 Figure 4. Total Wideband Noise Voltage Figure 5. Wideband Noise Figure http://onsemi.com 3 MMBT6427LT1G SMALL−SIGNAL CHARACTERISTICS 20 TJ = 25°C 10 C, CAPACITANCE (pF) 7.0 5.0 Cibo Cobo |h fe |, SMALL-SIGNAL CURRENT GAIN 4.0 VCE = 5.0 V f = 100 MHz TJ = 25°C 2.0 1.0 0.8 0.6 0.4 3.0 2.0 0.04 0.1 0.2 0.4 1.0 2.0 4.0 VR, REVERSE VOLTAGE (VOLTS) 10 20 40 0.2 0.5 1.0 2.0 0.5 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) 500 Figure 6. Capacitance Figure 7. High Frequency Current Gain 200 k TJ = 125°C hFE, DC CURRENT GAIN 100 k 70 k 50 k 30 k 20 k 10 k 7.0 k 5.0 k 3.0 k 2.0 k 5.0 7.0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 3.0 TJ = 25°C 2.5 IC = 10 mA 2.0 50 mA 250 mA 500 mA 25°C 1.5 - 55°C VCE = 5.0 V 1.0 0.5 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 IB, BASE CURRENT (mA) 100 200 500 1000 Figure 8. DC Current Gain Figure 9. Collector Saturation Region RθV, TEMPERATURE COEFFICIENTS (mV/°C) 1.6 TJ = 25°C 1.4 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 1000 1.2 VBE(on) @ VCE = 5.0 V 1.0 - 1.0 *APPLIES FOR IC/IB ≤ hFE/3.0 *RqVC FOR VCE(sat) 25°C TO 125°C - 2.0 - 55°C TO 25°C - 3.0 25°C TO 125°C qVB FOR VBE - 55°C TO 25°C - 4.0 0.8 VCE(sat) @ IC/IB = 1000 0.6 5.0 7.0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 - 5.0 - 6.0 5.0 7.0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 Figure 10. “On” Voltages Figure 11. Temperature Coefficients http://onsemi.com 4 MMBT6427LT1G 1.0 0.7 0.5 0.3 0.2 0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.05 SINGLE PULSE D = 0.5 0.2 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) SINGLE PULSE ZqJC(t) = r(t) • RqJC TJ(pk) - TC = P(pk) ZqJC(t) ZqJA(t) = r(t) • RqJA TJ(pk) - TA = P(pk) ZqJA(t) 0.2 0.5 1.0 2.0 5.0 10 20 50 t, TIME (ms) 100 200 500 1.0 k 2.0 k 5.0 k 10 k Figure 12. Thermal Response FIGURE A tP PP PP t1 1/f t DUTY CYCLE + t1 f + 1 tP PEAK PULSE POWER = PP Design Note: Use of Transient Thermal Resistance Data http://onsemi.com 5 MMBT6427LT1G PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN D SEE VIEW C 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 E 1 2 HE c e b q 0.25 A A1 L L1 VIEW C DIM A A1 b c D E e L L1 HE MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone : 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 6 MMBT6427LT1/D