MMBT6517LT1G High Voltage Transistor
NPN Silicon
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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COLLECTOR 3 1 BASE
MAXIMUM RATINGS
Rating Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Base Current Collector Current − Continuous Symbol VCEO VCBO VEBO IB IC Value 350 350 5.0 25 100 Unit V V V mA mA
1 2 3
2 EMITTER
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 − 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C
SOT−23 (TO−236AB) CASE 318 STYLE 6
MARKING DIAGRAM
1Z M G G 1 1Z = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location.
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR− 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
ORDERING INFORMATION
Device MMBT6517LT1G MMBT6517LT3G Package SOT−23 (Pb−Free) Shipping† 3000 Tape & Reel
SOT−23 10,000 Tape & Reel (Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 6
1
Publication Order Number: MMBT6517LT1/D
MMBT6517LT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Collector − Emitter Breakdown Voltage (IC = 1.0 mA) Collector − Base Breakdown Voltage (IC = 100 mA) Emitter − Base Breakdown Voltage (IE = 10 mA) Collector Cutoff Current (VCB = 250 V) Emitter Cutoff Current (VEB = 5.0 V) ON CHARACTERISTICS DC Current Gain (IC = 1.0 mA, VCE = 10 V) (IC = 10 mA, VCE = 10 V) (IC = 30 mA, VCE = 10 V) (IC = 50 mA, VCE = 10 V) (IC = 100 mA, VCE = 10 V) Collector − Emitter Saturation Voltage (Note 3) (IC = 10 mA, IB = 1.0 mA) (IC = 20 mA, IB = 2.0 mA) (IC = 30 mA, IB = 3.0 mA) (IC = 50 mA, IB = 5.0 mA) Base − Emitter Saturation Voltage (IC = 10 mA, IB = 1.0 mA) (IC = 20 mA, IB = 2.0 mA) (IC = 30 mA, IB = 3.0 mA) Base − Emitter On Voltage (IC = 100 mA, VCE = 10 V) SMALL− SIGNAL CHARACTERISTICS Current Gain − Bandwidth Product (IC = 10 mA, VCE = 20 V, f = 20 MHz) Collector−Base Capacitance (VCB = 20 V, f = 1.0 MHz) Emitter−Base Capacitance (VEB = 0.5 V, f = 1.0 MHz) 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. fT Ccb Ceb MHz 40 − − 200 pF 6.0 pF 80 hFE − 20 30 30 20 15 − − − − − − − − − − 200 200 − V 0.30 0.35 0.50 1.0 V 0.75 0.85 0.90 V 2.0 V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO V 350 350 6.0 − − − V − V − nA 50 nA 50 Symbol Min Max Unit
VCE(sat)
VBE(sat)
VBE(on)
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MMBT6517LT1G
200 VCE = 10 V hFE, DC CURRENT GAIN 100 70 50 30 20 - 55°C 25°C f T, CURRENT-GAIN — BANDWIDTH PRODUCT (MHz) TJ = 125°C 100 70 50 TJ = 25°C VCE = 20 V f = 20 MHz
30 20
10 1.0
2.0
3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA)
50 70 100
10 1.0
2.0
3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA)
50 70
100
Figure 1. DC Current Gain
Figure 2. Current−Gain — Bandwidth Product
1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 0.2 0 1.0
TJ = 25°C
RθV, TEMPERATURE COEFFICIENTS (mV/ °C)
1.4
2.5 2.0 1.5 1.0 0.5 0 RqVC for VCE(sat) - 55°C to 25°C - 55°C to 125°C RqVB for VBE IC + 10 IB 25°C to 125°C
VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 10 V
- 0.5 - 1.0 - 1.5 - 2.0 - 2.5 1.0 2.0
VCE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 5.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100
Figure 3. “On” Voltages
3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA)
50
70
100
Figure 4. Temperature Coefficients
100 70 50 C, CAPACITANCE (pF) 30 20 10 7.0 5.0 3.0 2.0 1.0 0.2 Ceb
TJ = 25°C
Ccb
0.5
1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS)
50 100 200
Figure 5. Capacitance
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MMBT6517LT1G
1.0 k 700 500 300 200 t, TIME (ns) tr 100 70 50 30 20 10 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 10 k 7.0 k 5.0 k 3.0 k 2.0 k t, TIME (ns) 1.0 k 700 500 300 200 100 tf VCE(off) = 100 V IC/IB = 5.0 IB1 = IB2 TJ = 25°C
td @ VBE(off) = 2.0 V
VCE(off) = 100 V IC/IB = 5.0 TJ = 25°C
ts
1.0
2.0 3.0
5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA)
50
70 100
Figure 6. Turn−On Time
Figure 7. Turn−Off Time
+VCC VCC ADJUSTED FOR VCE(off) = 100 V 1.0 k 50 -9.2 V PULSE WIDTH ≈ 100 ms tr, tf ≤ 5.0 ns DUTY CYCLE ≤ 1.0% FOR PNP TEST CIRCUIT, REVERSE ALL VOLTAGE POLARITIES 1/2MSD7000 2.2 k
+10.8 V
20 k
50 W SAMPLING SCOPE
APPROXIMATELY -1.35 V
(ADJUST FOR V(BE)off = 2.0 V)
Figure 8. Switching Time Test Circuit
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1.0 0.7 0.5 0.3 0.2
D = 0.5 0.2 SINGLE PULSE P(pk) SINGLE PULSE ZqJC(t) = r(t) • RqJC ZqJA(t) = r(t) • RqJA t1 t2 DUTY CYCLE, D = t1/t2 2.0 5.0 10 20 50 t, TIME (ms) 100 200 500 RqJC(t) = r(t) RqJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RqJC(t)
0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.2
0.05
0.5
1.0
1.0 k
2.0 k
5.0 k 10 k
Figure 9. Thermal Response
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MMBT6517LT1G
PACKAGE DIMENSIONS
SOT−23 (TO−236) CASE 318−08 ISSUE AN
D
SEE VIEW C 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08.
E
1 2
HE c e b q 0.25
A A1 L L1 VIEW C
DIM A A1 b c D E e L L1 HE
MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10
MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64
MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083
INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094
MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104
STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR
SOLDERING FOOTPRINT*
0.95 0.037 0.95 0.037
2.0 0.079 0.9 0.035
SCALE 10:1
0.8 0.031
mm inches
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
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MMBT6517LT1/D
