MMBT6517LT3G

MMBT6517L, NSVMMBT6517L High Voltage Transistor NPN Silicon http://onsemi.com Features • NSV Prefix for Automotive and Other Applications Requiring • Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO 350 V Collector − Base Voltage VCBO 350 V Emitter − Base Voltage VEBO 5.0 V Base Current IB 25 mA Collector Current − Continuous IC 100 mA Symbol Max Unit PD 225 mW 1.8 mW/°C 556 °C/W 2 EMITTER 3 1 2 SOT−23 (TO−236AB) CASE 318 STYLE 6 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature RqJA PD 300 mW 2.4 mW/°C RqJA 417 °C/W TJ, Tstg −55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR− 5 = 1.0  0.75  0.062 in. 2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina. MARKING DIAGRAM 1Z M G G 1 1Z = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping† MMBT6517LT1G SOT−23 (Pb−Free) 3000 / Tape & Reel MMBT6517LT3G SOT−23 (Pb−Free) 10,000 / Tape & Reel NSVMMBT6517LT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2013 October, 2013 − Rev. 8 1 Publication Order Number: MMBT6517LT1/D MMBT6517L, NSVMMBT6517L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Max 350 − 350 − 6.0 − − 50 − 50 20 30 30 20 15 − − 200 200 − − − − − 0.30 0.35 0.50 1.0 − − − 0.75 0.85 0.90 − 2.0 40 200 − 6.0 − 80 Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = 1.0 mA) V(BR)CEO Collector −Base Breakdown Voltage (IC = 100 mA) V(BR)CBO Emitter −Base Breakdown Voltage (IE = 10 mA) V(BR)EBO Collector Cutoff Current (VCB = 250 V) ICBO Emitter Cutoff Current (VEB = 5.0 V) IEBO V V V nA nA ON CHARACTERISTICS hFE DC Current Gain (IC = 1.0 mA, VCE = 10 V) (IC = 10 mA, VCE = 10 V) (IC = 30 mA, VCE = 10 V) (IC = 50 mA, VCE = 10 V) (IC = 100 mA, VCE = 10 V) Collector −Emitter Saturation Voltage (Note 3) (IC = 10 mA, IB = 1.0 mA) (IC = 20 mA, IB = 2.0 mA) (IC = 30 mA, IB = 3.0 mA) (IC = 50 mA, IB = 5.0 mA) VCE(sat) Base −Emitter Saturation Voltage (IC = 10 mA, IB = 1.0 mA) (IC = 20 mA, IB = 2.0 mA) (IC = 30 mA, IB = 3.0 mA) VBE(sat) Base −Emitter On Voltage (IC = 100 mA, VCE = 10 V) VBE(on) − V V V SMALL− SIGNAL CHARACTERISTICS fT Current Gain − Bandwidth Product (IC = 10 mA, VCE = 20 V, f = 20 MHz) Collector−Base Capacitance (VCB = 20 V, f = 1.0 MHz) Ccb Emitter−Base Capacitance (VEB = 0.5 V, f = 1.0 MHz) Ceb 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. http://onsemi.com 2 MHz pF pF f, T CURRENT-GAIN — BANDWIDTH PRODUCT (MHz) MMBT6517L, NSVMMBT6517L 200 TJ = 125°C hFE , DC CURRENT GAIN VCE = 10 V 100 25°C 70 50 -55°C 30 20 10 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 100 70 50 TJ = 25°C VCE = 20 V f = 20 MHz 30 20 10 1.0 Figure 1. DC Current Gain V, VOLTAGE (VOLTS) 1.0 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 10 V IC  + 10 IB 2.0 1.5 25°C to 125°C 1.0 0.5 RqVC for VCE(sat) 0 -55°C to 25°C -55°C to 125°C -1.5 VCE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 5.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 RqVB for VBE -2.0 -2.5 1.0 70 100 Figure 3. “On” Voltages 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 Figure 4. Temperature Coefficients 1000 100 70 50 TJ = 25°C IC, COLLECTOR CURRENT (mA) C, CAPACITANCE (pF) 100 -1.0 0.2 Ceb 30 20 10 7.0 5.0 Ccb 3.0 2.0 1.0 0.2 50 70 2.5 -0.5 0.4 0 1.0 RθV, TEMPERATURE COEFFICIENTS (mV/°C) TJ = 25°C 0.8 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) Figure 2. Current−Gain — Bandwidth Product 1.4 1.2 2.0 1 ms 100 100 ms 10 ms 10 1.0 s 1 0.1 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 1 50 100 200 Figure 5. Capacitance 10 100 VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 6. Safe Operating Area http://onsemi.com 3 1000 MMBT6517L, NSVMMBT6517L 1.0k 700 500 10k 7.0k 5.0k VCE(off) = 100 V IC/IB = 5.0 TJ = 25°C td @ VBE(off) = 2.0 V 300 3.0k 2.0k t, TIME (ns) 200 t, TIME (ns) ts tr 100 70 50 1.0k 700 500 30 300 20 200 10 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 100 1.0 70 100 VCE(off) = 100 V IC/IB = 5.0 IB1 = IB2 TJ = 25°C tf 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 Figure 8. Turn−Off Time Figure 7. Turn−On Time +VCC VCC ADJUSTED FOR VCE(off) = 100 V +10.8 V 2.2 k 20 k 50 W SAMPLING SCOPE 1.0 k 50 1/2MSD7000 -9.2 V PULSE WIDTH ≈ 100 ms tr, tf ≤ 5.0 ns DUTY CYCLE ≤ 1.0% FOR PNP TEST CIRCUIT, REVERSE ALL VOLTAGE POLARITIES APPROXIMATELY -1.35 V (ADJUST FOR V(BE)off = 2.0 V) r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 9. Switching Time Test Circuit 1.0 0.7 0.5 0.3 D = 0.5 0.2 0.2 0.1 0.1 0.07 0.05 P(pk) RqJC(t) = r(t) RqJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RqJC(t) SINGLE PULSE ZqJC(t) = r(t) • RqJC ZqJA(t) = r(t) • RqJA 0.03 0.02 0.01 0.1 SINGLE PULSE 0.05 0.2 0.5 1.0 t1 t2 DUTY CYCLE, D = t1/t2 2.0 5.0 10 20 50 t, TIME (ms) 100 Figure 10. Thermal Response http://onsemi.com 4 200 500 1.0k 2.0k 5.0k 10k MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AS DATE 30 JAN 2018 SCALE 4:1 D 0.25 3 E 1 2 T HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW SEE VIEW C c MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0° INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10° GENERIC MARKING DIAGRAM* END VIEW RECOMMENDED SOLDERING FOOTPRINT XXXMG G 1 3X 2.90 3X XXX = Specific Device Code M = Date Code G = Pb−Free Package 0.90 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS STYLE 1 THRU 5: CANCELLED STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 7: PIN 1. EMITTER 2. BASE 3. COLLECTOR STYLE 9: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE STYLE 11: STYLE 12: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. CATHODE 3. CATHODE−ANODE 3. ANODE STYLE 15: PIN 1. GATE 2. CATHODE 3. ANODE STYLE 16: PIN 1. ANODE 2. CATHODE 3. CATHODE STYLE 17: PIN 1. NO CONNECTION 2. ANODE 3. CATHODE STYLE 18: STYLE 19: STYLE 20: PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE 2. CATHODE 2. ANODE 2. ANODE 3. GATE 3. ANODE 3. CATHODE−ANODE STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 22: PIN 1. RETURN 2. OUTPUT 3. INPUT STYLE 23: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 24: PIN 1. GATE 2. DRAIN 3. SOURCE STYLE 27: PIN 1. CATHODE 2. CATHODE 3. CATHODE STYLE 28: PIN 1. ANODE 2. ANODE 3. ANODE DOCUMENT NUMBER: DESCRIPTION: 98ASB42226B SOT−23 (TO−236) STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE STYLE 13: PIN 1. SOURCE 2. DRAIN 3. GATE STYLE 25: PIN 1. ANODE 2. CATHODE 3. GATE STYLE 14: PIN 1. CATHODE 2. GATE 3. ANODE STYLE 26: PIN 1. CATHODE 2. ANODE 3. NO CONNECTION Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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