MMBT6520L,
NSVMMBT6520L
High Voltage Transistor
PNP Silicon
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Features
• NSV Prefix for Automotive and Other Applications Requiring
•
COLLECTOR
3
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
VCEO
−350
Vdc
Collector −Base Voltage
VCBO
−350
Vdc
Emitter −Base Voltage
VEBO
−5.0
Vdc
Base Current
IB
−250
mA
Collector Current − Continuous
IC
−500
mAdc
Symbol
Max
Unit
225
1.8
mW
mW/°C
556
°C/W
300
2.4
mW
mW/°C
RqJA
417
°C/W
TJ, Tstg
−55 to +150
°C
3
1
2
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR−5 Board,
(Note 1) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
SOT−23 (TO−236)
CASE 318
STYLE 6
MARKING DIAGRAM
PD
RqJA
PD
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
2Z M G
G
1
2Z = Device Code
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
MMBT6520LT1G
SOT−23
(Pb−Free)
3000 / Tape &
Reel
MMBT6520LT3G
SOT−23
(Pb−Free)
10,000 / Tape &
Reel
NSVMMBT6520LT1G SOT−23
(Pb−Free)
3,000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 1994
October, 2016 − Rev. 7
1
Publication Order Number:
MMBT6520LT1/D
MMBT6520L, NSVMMBT6520L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Max
Unit
Collector−Emitter Breakdown Voltage
(IC = −1.0 mA)
V(BR)CEO
−350
−
Vdc
Collector−Base Breakdown Voltage
(IC = −100 mA)
V(BR)CBO
−350
−
Vdc
Emitter−Base Breakdown Voltage
(IE = −10 mA)
V(BR)EBO
−5.0
−
Vdc
Collector Cutoff Current
(VCB = −250 V)
ICBO
−
−50
nA
Emitter Cutoff Current
(VEB = −4.0 V)
IEBO
−
−50
nA
20
30
30
20
15
−
−
200
200
−
−
−
−
−
−0.30
−0.35
−0.50
−1.0
−
−
−
−0.75
−0.85
−0.90
Characteristic
OFF CHARACTERISTICS
ON CHARACTERISTICS
DC Current Gain
(IC = −1.0 mA, VCE = −10 V)
(IC = −10 mA, VCE = −10 V)
(IC = −30 mA, VCE = −10 V)
(IC = −50 mA, VCE = −10 V)
(IC = −100 mA, VCE = −10 V)
hFE
Collector−Emitter Saturation Voltage
(IC = −10 mA, IB = −1.0 mA)
(IC = −20 mA, IB = −2.0 mA)
(IC = −30 mA, IB = −3.0 mA)
(IC = −50 mA, IB = −5.0 mA)
VCE(sat)
Base−Emitter Saturation Voltage
(IC = −10 mA, IB = −1.0 mA)
(IC = −20 mA, IB = −2.0 mA)
(IC = −30 mA, IB = −3.0 mA)
VBE(sat)
Base−Emitter On Voltage
(IC = −100 mA, VCE = −10 V)
VBE(on)
−
−2.0
Vdc
fT
40
200
MHz
Collector−Base Capacitance
(VCB= −20 V, f = 1.0 MHz)
Ccb
−
6.0
pF
Emitter−Base Capacitance
(VEB= −0.5 V, f = 1.0 MHz)
Ceb
−
100
pF
−
Vdc
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = −10 mA, VCE = −20 V, f = 20 MHz)
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
hFE, DC CURRENT GAIN
200
VCE = 10 V
TJ = 125°C
100
25°C
70
-55°C
50
30
20
1.0
2.0
3.0
5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
50
70 100
f,
T CURRENT-GAIN — BANDWIDTH PRODUCT (MHz)
MMBT6520L, NSVMMBT6520L
100
70
50
20
10
1.0
1.4
TJ = 25°C
V, VOLTAGE (VOLTS)
1.0
0.8
VBE(sat) @ IC/IB = 10
0.6
VBE(on) @ VCE = 10 V
100
2.5
IC
+ 10
IB
2.0
1.5
25°C to 125°C
1.0
0.5
0
-1.5
VCE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 5.0
2.0
3.0
5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
50
-2.0
-2.5
1.0
70 100
RqVC for VCE(sat)
-55°C to 25°C
100
70
50
2.0
1.0k
700
500
TJ = 25°C
Ceb
30
-55°C to 125°C
RqVB for VBE
3.0
5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
50
70
100
Figure 4. Temperature Coefficients
Figure 3. “On” Voltages
td @ VBE(off) = 2.0 V
300
VCE(off) = 100 V
IC/IB = 5.0
TJ = 25°C
200
20
t, TIME (ns)
C, CAPACITANCE (pF)
50 70
-1.0
0.2
10
7.0
5.0
Ccb
tr
100
70
50
3.0
30
2.0
20
1.0
0.2
3.0
5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
-0.5
0.4
0
1.0
2.0
Figure 2. Current−Gain — Bandwidth Product
RθV, TEMPERATURE COEFFICIENTS (mV/°C)
Figure 1. DC Current Gain
1.2
TJ = 25°C
VCE = 20 V
f = 20 MHz
30
0.5
1.0 2.0
5.0
10
20
VR, REVERSE VOLTAGE (VOLTS)
10
1.0
50 100 200
Figure 5. Capacitance
2.0
3.0
5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
Figure 6. Turn−On Time
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3
50
70 100
MMBT6520L, NSVMMBT6520L
IC, COLLECTOR CURRENT (A)
1
10k
7.0k
5.0k
ts
3.0k
t, TIME (ns)
2.0k
1.0k
700
500
VCE(off) = 100 V
IC/IB = 5.0
IB1 = IB2
TJ = 25°C
tf
300
200
100
1.0
10 ms
0.1
1.0 s
0.01
0.001
2.0 3.0
5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
50
70 100
1
10
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
0.3
1000
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 7. Turn−Off Time
1.0
0.7
0.5
100
Figure 8. Safe Operating Area
D = 0.5
0.2
0.2
0.1
P(pk)
0.1
0.07
0.05
RqJC(t) = r(t) RqJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) RqJC(t)
SINGLE PULSE
ZqJC(t) = r(t) • RqJC
ZqJA(t) = r(t) • RqJA
0.03
0.02
0.01
0.1
SINGLE PULSE
0.05
0.2
0.5
1.0
t1
t2
DUTY CYCLE, D = t1/t2
2.0
5.0
10
20
50
t, TIME (ms)
100
200
500
1.0k
2.0k
Figure 9. Thermal Response
+VCC
VCC ADJUSTED
FOR VCE(off) = 100 V
+10.8 V
2.2 k
20 k
50 W SAMPLING SCOPE
1.0 k
50
1/2MSD7000
-9.2 V
PULSE WIDTH ≈ 100 ms
tr, tf ≤ 5.0 ns
DUTY CYCLE ≤ 1.0%
FOR PNP TEST CIRCUIT,
REVERSE ALL VOLTAGE POLARITIES
APPROXIMATELY
-1.35 V
(ADJUST FOR V(BE)off = 2.0 V)
Figure 10. Switching Time Test Circuit
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4
5.0k 10k
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AS
DATE 30 JAN 2018
SCALE 4:1
D
0.25
3
E
1
2
T
HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
DIM
A
A1
b
c
D
E
e
L
L1
HE
T
L
3X b
L1
VIEW C
e
TOP VIEW
A
A1
SIDE VIEW
SEE VIEW C
c
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.14
0.20
2.90
3.04
1.30
1.40
1.90
2.04
0.43
0.55
0.54
0.69
2.40
2.64
−−−
10 °
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0°
INCHES
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10°
GENERIC
MARKING DIAGRAM*
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT
XXXMG
G
1
3X
2.90
3X
XXX = Specific Device Code
M = Date Code
G
= Pb−Free Package
0.90
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
0.95
PITCH
0.80
DIMENSIONS: MILLIMETERS
STYLE 1 THRU 5:
CANCELLED
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 7:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
STYLE 9:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 10:
PIN 1. DRAIN
2. SOURCE
3. GATE
STYLE 11:
STYLE 12:
PIN 1. ANODE
PIN 1. CATHODE
2. CATHODE
2. CATHODE
3. CATHODE−ANODE
3. ANODE
STYLE 15:
PIN 1. GATE
2. CATHODE
3. ANODE
STYLE 16:
PIN 1. ANODE
2. CATHODE
3. CATHODE
STYLE 17:
PIN 1. NO CONNECTION
2. ANODE
3. CATHODE
STYLE 18:
STYLE 19:
STYLE 20:
PIN 1. NO CONNECTION PIN 1. CATHODE
PIN 1. CATHODE
2. CATHODE
2. ANODE
2. ANODE
3. GATE
3. ANODE
3. CATHODE−ANODE
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
STYLE 22:
PIN 1. RETURN
2. OUTPUT
3. INPUT
STYLE 23:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 24:
PIN 1. GATE
2. DRAIN
3. SOURCE
STYLE 27:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
STYLE 28:
PIN 1. ANODE
2. ANODE
3. ANODE
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT−23 (TO−236)
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
STYLE 13:
PIN 1. SOURCE
2. DRAIN
3. GATE
STYLE 25:
PIN 1. ANODE
2. CATHODE
3. GATE
STYLE 14:
PIN 1. CATHODE
2. GATE
3. ANODE
STYLE 26:
PIN 1. CATHODE
2. ANODE
3. NO CONNECTION
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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