MMBT6521LT1G

MMBT6521LT1G Amplifier Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Value 25 40 4.0 100 Unit Vdc Vdc Vdc mAdc 1 BASE 2 EMITTER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board (Note 1) @TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) @TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 556 300 2.4 417 − 55 to +150 Unit 1 3 mW mW/°C °C/W mW mW/°C °C/W °C 2 RqJA PD SOT− 23 (TO − 236) CASE 318 − 08 STYLE 6 RqJA TJ, Tstg MARKING DIAGRAM Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR− 5 = 1.0  0.75  0.062 in. 2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina. RO M G G 1 RO = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device MMBT6521LT1G Package SOT−23 (Pb−Free) Shipping† 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2009 August, 2009 − Rev. 5 1 Publication Order Number: MMBT6521LT1/D MMBT6521LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector − Emitter Breakdown Voltage (IC = 0.5 mAdc, IB = 0) Emitter − Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) ON CHARACTERISTICS DC Current Gain (IC = 100 mAdc, VCE = 10 Vdc) (IC = 2.0 mAdc, VCE = 10 Vdc) Collector − Emitter Saturation Voltage (IC = 50 mAdc, IB = 5.0 mAdc) SMALL− SIGNAL CHARACTERISTICS Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Noise Figure (IC = 10 mAdc, VCE = 5.0 Vdc, Power Bandwidth = 15.7 kHz, 3.0 dB points @ = 10 Hz and 10 kHz) Cobo NF − − 3.5 3.0 pF dB hFE 150 300 − − 600 0.5 − V(BR)CEO V(BR)EBO ICBO IEBO 25 4.0 − − − − 0.5 10 Vdc Vdc Symbol Min Max Unit mAdc nAdc VCE(sat) Vdc RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model EQUIVALENT SWITCHING TIME TEST CIRCUITS + 3.0 V 300 ns DUTY CYCLE = 2% - 0.5 V