MMBTA05LT3

MMBTA05L, MMBTA06L Driver Transistors NPN Silicon Features • S and NSV Prefix for Automotive and Other Applications Requiring • www.onsemi.com Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage MMBTA05L MMBTA06L VCEO Collector −Base Voltage VCBO Value 2 EMITTER Unit Vdc 60 80 3 Vdc 1 60 80 MMBTA05L MMBTA06L Emitter −Base Voltage Collector Current − Continuous Electrostatic Discharge 2 VEBO 4.0 Vdc IC 500 mAdc ESD HBM Class 3B MM Class C CDM Class IV SOT−23 CASE 318 STYLE 6 MARKING DIAGRAMS Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1H M G G 1GM M G G THERMAL CHARACTERISTICS Characteristic Symbol Max Unit PD 225 mW 1.8 mW/°C RqJA 556 °C/W PD 300 mW 2.4 mW/°C RqJA 417 °C/W TJ, Tstg −55 to +150 Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature MMBTA05LT1 MMBTA06LT1, SMMBTA06L 1H, 1GM = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. °C 1. FR− 5 = 1.0  0.75  0.062 in. 2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina. © Semiconductor Components Industries, LLC, 1994 October, 2016 − Rev. 10 1 Publication Order Number: MMBTA05LT1/D MMBTA05L, MMBTA06L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Max Unit 60 80 − − V(BR)EBO 4.0 − Vdc ICES − 0.1 mAdc − − 0.1 0.1 100 100 − − OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note 3) (IC = 1.0 mAdc, IB = 0) V(BR)CEO Vdc MMBTA05L MMBTA06L Emitter −Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCE = 60 Vdc, IB = 0) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) mAdc ICBO MMBTA05L MMBTA06L ON CHARACTERISTICS hFE DC Current Gain (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) − Collector −Emitter Saturation Voltage (IC = 100 mAdc, IB = 10 mAdc) VCE(sat) − 0.25 Vdc Base −Emitter On Voltage (IC = 100 mAdc, VCE = 1.0 Vdc) VBE(on) − 1.2 Vdc fT 100 − MHz SMALL− SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (Note 4) (IC = 10 mA, VCE = 2.0 V, f = 100 MHz) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 4. fT is defined as the frequency at which |hfe| extrapolates to unity. TURN-ON TIME TURN-OFF TIME VCC -1.0 V VCC +VBB +40 V 5.0 ms 100 +40 V RL 100 OUTPUT +10 V 0 tr = 3.0 ns OUTPUT RB Vin RB Vin * CS t 6.0 pF 5.0 mF RL * CS t 6.0 pF 5.0 mF 100 100 5.0 ms tr = 3.0 ns *Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities Figure 1. Switching Time Test Circuits www.onsemi.com 2 MMBTA05L, MMBTA06L 100 100 10 1 10 100 1000 10 100 VR, REVERSE VOLTAGE (V) Figure 2. Current Gain Bandwidth Product vs. Collector Current Figure 3. Capacitance 1000 TA = 150°C hfe, DC CURRENT GAIN ts 300 t, TIME (ns) 1 IC, COLLECTOR CURRENT (mA) 1.0 k 700 500 200 100 70 50 tf VCC = 40 V IC/IB = 10 IB1 = IB2 TJ = 25°C 30 20 tr VCE = 1.0 V TA = 25°C 100 TA = −55°C td @ VBE(off) = 0.5 V 5.0 7.0 10 20 30 50 70 100 200 300 10 0.1 500 1 10 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 4. Switching Time Figure 5. DC Current Gain vs. Collector Current 1000 1.2 1 1.1 IC/IB = 10 VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) Cobo 1 0.1 10 10 TA = 25°C Cibo VCE = 2.0 V TA = 25°C C, CAPACITANCE (pF) ftau, CURRENT GAIN BANDWIDTH PRODUCT (MHz) 1000 TA = 150°C 0.1 TA = 25°C TA = −55°C 0.01 0.1 1 10 100 0.9 TA = −55°C 0.8 0.7 0.6 TA = 25°C 0.5 0.4 0.3 1000 IC/IB = 10 1.0 0.2 0.1 IC, COLLECTOR CURRENT (mA) TA = 150°C 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Figure 6. Collector Emitter Saturation Voltage vs. Collector Current Figure 7. Base Emitter Saturation Voltage vs. Collector Current www.onsemi.com 3 MMBTA05L, MMBTA06L 1.0 1 VCE = 1 V VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) VBE(on), BASE−EMITTER VOLTAGE (V) 1.1 TA = −55°C 0.9 0.8 TA = 25°C 0.7 0.6 0.5 TA = 150°C 0.4 0.3 0.2 RqVB, TEMPERATURE COEFFICIENT (mV/°C) 0.1 0.1 1 10 100 IC = 500 mA 0.6 IC = 10 mA 0.4 0.2 0.1 1 10 IB, BASE CURRENT (mA) Figure 8. Base Emitter Turn−ON Voltage vs. Collector Current Figure 9. Saturation Region IC, COLLECTOR CURRENT (mA) 10000 −1.2 −1.6 RqVB for VBE −2.4 MMBTA06L 100 ms 1000 100 10 ms 1 ms 1s Thermal Limit 100 10 Single Pulse at TA = 25°C 1 1.0 2.0 5.0 10 20 50 100 200 0.1 500 1 10 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 10. Base−Emitter Temperature Coefficient Figure 11. Safe Operating Area 10000 IC, COLLECTOR CURRENT (mA) −2.8 0.5 TA = 25°C IC = 250 mA IC, COLLECTOR CURRENT (mA) −0.8 −2.0 0.8 0 0.01 1000 IC = 100 mA IC = 50 mA MMBTA05L 100 ms 10 ms 1000 1 ms 1s 100 Thermal Limit 10 1 Single Pulse at TA = 25°C 0.1 1 10 VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 12. Safe Operating Area www.onsemi.com 4 100 100 MMBTA05L, MMBTA06L ORDERING INFORMATION Package Shipping† MMBTA05LT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel NSVMMBTA05LT1G* SOT−23 (Pb−Free) 3,000 / Tape & Reel MMBTA05LT3G SOT−23 (Pb−Free) 10,000 / Tape & Reel MMBTA06LT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel SMMBTA06LT1G* SOT−23 (Pb−Free) 3,000 / Tape & Reel MMBTA06LT3G SOT−23 (Pb−Free) 10,000 / Tape & Reel SMMBTA06LT3G* SOT−23 (Pb−Free) 10,000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AS DATE 30 JAN 2018 SCALE 4:1 D 0.25 3 E 1 2 T HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW SEE VIEW C c MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0° INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10° GENERIC MARKING DIAGRAM* END VIEW RECOMMENDED SOLDERING FOOTPRINT XXXMG G 1 3X 2.90 3X XXX = Specific Device Code M = Date Code G = Pb−Free Package 0.90 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS STYLE 1 THRU 5: CANCELLED STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 7: PIN 1. EMITTER 2. BASE 3. COLLECTOR STYLE 9: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE STYLE 11: STYLE 12: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. CATHODE 3. CATHODE−ANODE 3. ANODE STYLE 15: PIN 1. GATE 2. CATHODE 3. ANODE STYLE 16: PIN 1. ANODE 2. CATHODE 3. CATHODE STYLE 17: PIN 1. NO CONNECTION 2. ANODE 3. CATHODE STYLE 18: STYLE 19: STYLE 20: PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE 2. CATHODE 2. ANODE 2. ANODE 3. GATE 3. ANODE 3. CATHODE−ANODE STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 22: PIN 1. RETURN 2. OUTPUT 3. INPUT STYLE 23: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 24: PIN 1. GATE 2. DRAIN 3. SOURCE STYLE 27: PIN 1. CATHODE 2. CATHODE 3. CATHODE STYLE 28: PIN 1. ANODE 2. ANODE 3. ANODE DOCUMENT NUMBER: DESCRIPTION: 98ASB42226B SOT−23 (TO−236) STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE STYLE 13: PIN 1. SOURCE 2. DRAIN 3. GATE STYLE 25: PIN 1. ANODE 2. CATHODE 3. GATE STYLE 14: PIN 1. CATHODE 2. GATE 3. ANODE STYLE 26: PIN 1. CATHODE 2. ANODE 3. NO CONNECTION Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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