MMBTA06WT1

MMBTA06WT1 Driver Transistor NPN Silicon Moisture Sensitivity Level: 1 ESD Rating: Human Body Model − 4 kV ESD Rating: Machine Model − 400 V Features http://onsemi.com COLLECTOR 3 • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 1 BASE MAXIMUM RATINGS Rating Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous Symbol VCEO VCBO VEBO IC Value 80 80 4.0 500 Unit Vdc Vdc Vdc mAdc 1 2 EMITTER 3 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board TA = 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD RqJA TJ, Tstg Max 150 833 −55 to +150 Unit mW °C/W °C 2 SC−70 CASE 419 STYLE 3 MARKING DIAGRAM GM D GM = Specific Device Code D = Date Code ORDERING INFORMATION Device MMBTA06WT1 MMBTA06WT1G Package SC−70 SC−70 (Pb−Free) Shipping† 3000/T ape & Reel 3000/T ape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2003 1 December, 2003 − Rev. 1 Publication Order Number: MMBTA06WT1/D MMBTA06WT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (Note 1) (IC = 1.0 mAdc, IB = 0) Emitter−Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCE = 60 Vdc, IB = 0) Collector Cutoff Current (VCB = 80 Vdc, IE = 0) V(BR)CEO V(BR)EBO ICES ICBO − 0.1 80 4.0 − − − 0.1 Vdc Vdc mAdc mAdc ON CHARACTERISTICS DC Current Gain (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) Collector−Emitter Saturation Voltage (IC = 100 mAdc, IB = 10 mAdc) Base−Emitter On Voltage (IC = 100 mAdc, VCE = 1.0 Vdc) hFE 100 100 VCE(sat) VBE(on) − − − − 0.25 1.2 Vdc Vdc − SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product (Note 2) (IC = 10 mA, VCE = 2.0 V, f = 100 MHz) 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. 2. fT is defined as the frequency at which |hfe| extrapolates to unity. fT 100 − MHz TURN−ON TIME −1.0 V VCC +40 V TURN−OFF TIME +VBB VCC +40 V RL OUTPUT Vin * CS t 6.0 pF 5.0 mF 100 5.0 ms tr = 3.0 ns RB * CS t 6.0 pF 5.0 ms +10 V Vin 0 tr = 3.0 ns 5.0 mF 100 RB RL OUTPUT 100 100 *Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities Figure 1. Switching Time Test Circuits http://onsemi.com 2 MMBTA06WT1 f T , CURRENT−GAIN − BANDWIDTH PRODUCT (MHz) 300 200 VCE = 2.0 V TJ = 25°C C, CAPACITANCE (pF) 80 60 40 Cibo 20 TJ = 25°C 100 70 50 10 8.0 6.0 Cobo 0.2 0.5 1.0 2.0 5.0 10 20 50 100 30 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 4.0 0.1 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS) Figure 2. Current−Gain — Bandwidth Product Figure 3. Capacitance 300 t, TIME (ns) 200 100 70 50 30 20 10 VCC = 40 V IC/IB = 10 IB1 = IB2 TJ = 25°C 5.0 7.0 10 ts I C , COLLECTOR CURRENT (mA) 1.0 k 700 500 1.0 k 700 500 300 200 100 70 50 30 20 10 1.0 TA = 25°C TC = 25°C 100 ms 1.0 ms 1.0 s tf tr td @ VBE(off) = 0.5 V 20 30 50 70 100 200 300 500 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 4. Switching Time Figure 5. Active−Region Safe Operating Area 400 TJ = 125°C VCE = 1.0 V h FE , DC CURRENT GAIN 25°C −55°C 100 80 60 40 0.5 V, VOLTAGE (VOLTS) 200 1.0 TJ = 25°C VBE(sat) @ IC/IB = 10 0.8 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500 0 0.5 1.0 2.0 5.0 10 20 50 100 200 500 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 6. DC Current Gain Figure 7. “ON” Voltages http://onsemi.com 3 MMBTA06WT1 VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) TJ = 25°C IC = 50 mA 0.6 IC = 100 mA IC = 250 mA IC = 500 mA R qVB , TEMPERATURE COEFFICIENT (mV/° C) 1.0 −0.8 0.8 −1.2 −1.6 −2.0 RqVB for VBE 0.4 0.2 0 IC = 10 mA −2.4 −2.8 0.5 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 1.0 2.0 5.0 10 20 50 100 200 500 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 8. Collector Saturation Region Figure 9. Base−Emitter Temperature Coefficient http://onsemi.com 4 MMBTA06WT1 PACKAGE DIMENSIONS SC−70/SOT−323 CASE 419−04 ISSUE L A L 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D G H J K L N S INCHES MIN MAX 0.071 0.087 0.045 0.053 0.032 0.040 0.012 0.016 0.047 0.055 0.000 0.004 0.004 0.010 0.017 REF 0.026 BSC 0.028 REF 0.079 0.095 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.00 0.30 0.40 1.20 1.40 0.00 0.10 0.10 0.25 0.425 REF 0.650 BSC 0.700 REF 2.00 2.40 S 1 2 B D G C 0.05 (0.002) N K J H STYLE 3: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.65 0.025 0.65 0.025 1.9 0.075 0.9 0.035 0.7 0.028 SCALE 10:1 mm inches Figure 10. SC−70/SOT−323 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 MMBTA06WT1 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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