MMBTA14LT1

MMBTA13LT1, MMBTA14LT1 MMBTA14LT1 is a Preferred Device Darlington Amplifier Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Symbol VCES VCBO VEBO IC Value 30 30 10 300 Unit Vdc Vdc Vdc mAdc 1 2 Symbol PD 225 1.8 RqJA PD 300 2.4 RqJA TJ, Tstg 417 −55 to +150 mW mW/°C °C/W °C 1x 556 mW mW/°C °C/W Max Unit COLLECTOR 3 BASE 1 EMITTER 2 3 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature SOT−23 (TO−236) CASE 318 STYLE 6 MARKING DIAGRAM 1x M G G 1 = Device Code x = M for MMBTA13LT1 x = N for MMBTA14LT1 M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−5 = 1.0  0.75  0.062 in. 2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina. ORDERING INFORMATION Device MMBTA13LT1 MMBTA13LT1G MMBTA14LT1 MMBTA14LT1G Package SOT−23 SOT−23 (Pb−Free) SOT−23 SOT−23 (Pb−Free) Shipping † 3,000 / Tape & Reel 3,000 / Tape & Reel 3,000 / Tape & Reel 3,000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006 1 January, 2006 − Rev. 2 Publication Order Number: MMBTA13LT1/D MMBTA13LT1, MMBTA14LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) Emitter Cutoff Current (VEB = 10 Vdc, IC = 0) ON CHARACTERISTICS (Note 3) DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) (IC = 100 mAdc, VCE = 5.0 Vdc) Collector −Emitter Saturation Voltage (IC = 100 mAdc, IB = 0.1 mAdc) Base −Emitter On Voltage (IC = 100 mAdc, VCE = 5.0 Vdc) SMALL− SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (Note 4) (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 4. fT = |hfe| • ftest. fT 125 − MHz hFE MMBTA13 MMBTA14 MMBTA13 MMBTA14 VCE(sat) − VBE − 2.0 1.5 Vdc 5000 10,000 10,000 20,000 − − − − Vdc − V(BR)CES 30 ICBO − IEBO − 100 100 nAdc − nAdc Vdc Symbol Min Max Unit RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model http://onsemi.com 2 MMBTA13LT1, MMBTA14LT1 NOISE CHARACTERISTICS (VCE = 5.0 Vdc, TA = 25°C) 500 200 100 10 mA 50 100 mA 20 IC = 1.0 mA 10 5.0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k f, FREQUENCY (Hz) 50 k 100 k BANDWIDTH = 1.0 Hz RS ≈ 0 i n, NOISE CURRENT (pA) 2.0 BANDWIDTH = 1.0 Hz 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k f, FREQUENCY (Hz) 50 k 100 k 100 mA 10 mA en, NOISE VOLTAGE (nV) IC = 1.0 mA Figure 2. Noise Voltage Figure 3. Noise Current VT, TOTAL WIDEBAND NOISE VOLTAGE (nV) 200 BANDWIDTH = 10 Hz TO 15.7 kHz IC = 10 mA 14 BANDWIDTH = 10 Hz TO 15.7 kHz 12 NF, NOISE FIGURE (dB) 100 70 50 30 20 10 10 mA 8.0 6.0 4.0 2.0 IC = 1.0 mA 100 mA 100 mA 1.0 mA 10 1.0 2.0 5.0 10 20 50 100 200 RS, SOURCE RESISTANCE (kW) 500 1000 0 1.0 2.0 5.0 10 20 50 100 200 RS, SOURCE RESISTANCE (kW) 500 1000 Figure 4. Total Wideband Noise Voltage Figure 5. Wideband Noise Figure http://onsemi.com 3 MMBTA13LT1, MMBTA14LT1 SMALL−SIGNAL CHARACTERISTICS 20 TJ = 25°C |h fe |, SMALL−SIGNAL CURRENT GAIN 4.0 VCE = 5.0 V f = 100 MHz TJ = 25°C C, CAPACITANCE (pF) 10 7.0 5.0 2.0 Cibo Cobo 1.0 0.8 0.6 0.4 3.0 2.0 0.04 0.1 0.2 0.4 1.0 2.0 4.0 10 VR, REVERSE VOLTAGE (VOLTS) 20 40 0.2 0.5 1.0 2.0 0.5 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) 500 Figure 6. Capacitance VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 7. High Frequency Current Gain 200 k 100 k 70 k 50 k 30 k 20 k 10 k 7.0 k 5.0 k 3.0 k TJ = 125°C 3.0 TJ = 25°C 2.5 IC = 10 mA 50 mA 250 mA 500 mA hFE , DC CURRENT GAIN 25°C 2.0 1.5 −55 °C VCE = 5.0 V 1.0 0.5 0.1 0.2 2.0 k 5.0 7.0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 0.5 1.0 2.0 5.0 10 20 50 100 200 IB, BASE CURRENT (mA) 500 1000 Figure 8. DC Current Gain Figure 9. Collector Saturation Region RθV, TEMPERATURE COEFFICIENTS (mV/ C) ° 1.6 TJ = 25°C 1.4 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 1000 1.2 VBE(on) @ VCE = 5.0 V 1.0 −1.0 −2.0 −3.0 *APPLIES FOR IC/IB ≤ hFE/3.0 *RqVC FOR VCE(sat) 25°C TO 125°C −55 °C TO 25°C 25°C TO 125°C −4.0 qVB FOR VBE −5.0 −6.0 5.0 7.0 10 −55 °C TO 25°C 0.8 0.6 VCE(sat) @ IC/IB = 1000 5.0 7.0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 Figure 10. “On” Voltages Figure 11. Temperature Coefficients http://onsemi.com 4 MMBTA13LT1, MMBTA14LT1 1.0 0.7 0.5 0.3 0.2 0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 t, TIME (ms) 100 0.05 SINGLE PULSE D = 0.5 0.2 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) SINGLE PULSE ZqJC(t) = r(t) • RqJC TJ(pk) − TC = P(pk) ZqJC(t) ZqJA(t) = r(t) • RqJA TJ(pk) − TA = P(pk) ZqJA(t) 200 500 1.0 k 2.0 k 5.0 k 10 k Figure 12. Thermal Response IC, COLLECTOR CURRENT (mA) 1.0 k 700 500 300 200 100 70 50 30 20 10 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 0.4 0.6 TA = 25°C TC = 25°C 1.0 ms 100 ms 1.0 s 1.0 2.0 4.0 6.0 10 20 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 40 Figure 13. Active Region Safe Operating Area FIGURE A tP PP PP t1 1/f t DUTY CYCLE + t1 f + 1 tP PEAK PULSE POWER = PP Design Note: Use of Transient Thermal Resistance Data http://onsemi.com 5 MMBTA13LT1, MMBTA14LT1 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN D 3 SEE VIEW C E 1 2 HE c b e q 0.25 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 A L A1 L1 VIEW C DIM A A1 b c D E e L L1 HE MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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