MMBTA42LT1G_11

MMBTA42LT1G, MMBTA43LT1G High Voltage Transistors NPN Silicon Features http://onsemi.com COLLECTOR 3 1 BASE Symbol MMBTA42 MMBTA43 MMBTA42 MMBTA43 MMBTA42 MMBTA43 VCEO Value 300 200 300 200 6.0 6.0 500 Unit Vdc 3 1 Vdc 2 SOT−23 (TO−236) CASE 318 STYLE 6 2 EMITTER • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Characteristic Collector − Emitter Voltage Collector − Base Voltage VCBO Vdc Emitter − Base Voltage VEBO Collector Current − Continuous IC Symbol PD mAdc THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Max 225 1.8 556 300 2.4 417 −55 to +150 Unit mW mW/°C °C/W 1 mW mW/°C °C/W °C MARKING DIAGRAMS RqJA PD 1D M G G 1 M1E M G G RqJA TJ, Tstg Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 1D = MMBTA42LT M1E = MMBTA43LT M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. ORDERING INFORMATION © Semiconductor Components Industries, LLC, 2011 June, 2011 − Rev. 10 1 Publication Order Number: MMBTA42LT1/D MMBTA42LT1G, MMBTA43LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector − Emitter Breakdown Voltage (Note 3) (IC = 1.0 mAdc, IB = 0) Collector − Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter − Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCB = 200 Vdc, IE = 0) (VCB = 160 Vdc, IE = 0) Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) (VEB = 4.0 Vdc, IC = 0) ON CHARACTERISTICS (Note 3) DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 30 mAdc, VCE = 10 Vdc) Collector − Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) Base−Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) SMALL− SIGNAL CHARACTERISTICS Current − Gain − Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Collector−Base Capacitance (VCB = 20 Vdc, IE = 0, f = 1.0 MHz) 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. MMBTA42 MMBTA43 fT Ccb 50 − MHz pF Both Types Both Types MMBTA42 MMBTA43 MMBTA42 MMBTA43 VCE(sat) hFE 25 40 40 40 − − − − − − − 0.5 0.5 0.9 Vdc − MMBTA42 MMBTA43 MMBTA42 MMBTA43 MMBTA42 MMBTA43 MMBTA42 MMBTA43 V(BR)CEO 300 200 300 200 6.0 − − − − − Vdc Symbol Min Max Unit V(BR)CBO Vdc V(BR)EBO ICBO Vdc mAdc − − − − 0.1 0.1 0.1 0.1 IEBO mAdc VBE(sat) Vdc − − 3.0 4.0 http://onsemi.com 2 MMBTA42LT1G, MMBTA43LT1G TYPICAL CHARACTERISTICS 1000 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) VCE = 10 V hFE, DC CURRENT GAIN 1.2 IC/IB = 10 1.0 0.8 0.6 0.4 0.2 −55°C 0.0 0.1 1 10 100 25°C 150°C TJ = 150°C 100 25°C −55°C 10 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain Figure 2. Collector−Emitter Saturation Voltage vs. Collector Current 1.0 0.9 0.8 −55°C 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.1 1 10 IC/IB = 10 100 150°C 25°C 0.9 VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.1 1 10 IC/IB = 10 100 150°C −55°C 25°C IC, COLLECTOR CURRENT (mA) VBE(on), BASE−EMITTER VOLTAGE (V) 1.0 IC, COLLECTOR CURRENT (mA) Figure 3. Base−Emitter Saturation Voltage vs. Collector Current qVB, TEMPERATURE COEFFICIENT (mV/°C) 0 −0.4 −0.8 −1.2 −1.6 −2.0 −2.4 −2.8 0.1 1 qVB, for VBE −55°C to 150°C 10 100 0.1 0.1 VCE = 10 V C, CAPACITANCE (pF) 100 Figure 4. Base−Emitter On Voltage vs. Collector Current Cibo TJ = 25°C f = 1 MHz 10 Cobo 1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS) Figure 5. Base−Emitter Temperature Coefficient http://onsemi.com 3 Figure 6. Capacitance MMBTA42LT1G, MMBTA43LT1G TYPICAL CHARACTERISTICS fTau, CURRENT−GAIN BANDWIDTH (MHz) 100 VCE = 20 V TJ = 25°C 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 7. Current−Gain — Bandwidth Product http://onsemi.com 4 MMBTA42LT1G, MMBTA43LT1G ORDERING INFORMATION Device Order Number MMBTA42LT1G MMBTA42LT3G MMBTA43LT1G Package Type SOT−23 (Pb−Free) SOT−23 (Pb−Free) SOT−23 (Pb−Free) Shipping† 3,000 / Tape & Reel 10,000 / Tape & Reel 3,000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 5 MMBTA42LT1G, MMBTA43LT1G PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AP D SEE VIEW C 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L L1 HE q MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0° INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10° E 1 2 HE c e b q 0.25 A A1 L L1 VIEW C STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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