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MMBTA55LT1G_10

MMBTA55LT1G_10

  • 厂商:

    ONSEMI(安森美)

  • 封装:

  • 描述:

    MMBTA55LT1G_10 - Driver Transistors PNP Silicon - ON Semiconductor

  • 数据手册
  • 价格&库存
MMBTA55LT1G_10 数据手册
MMBTA55LT1G, MMBTA56LT1G Driver Transistors PNP Silicon Features http://onsemi.com COLLECTOR 3 1 BASE Symbol MMBTA55 MMBTA56 MMBTA55 MMBTA56 VCEO Value −60 −80 −60 −80 −4.0 −500 Unit Vdc 3 Vdc 1 2 Vdc mAdc SOT−23 CASE 318 STYLE 6 2 EMITTER • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Collector − Emitter Voltage Collector − Base Voltage VCBO Emitter − Base Voltage Collector Current − Continuous VEBO IC THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 556 300 2.4 417 − 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C 1 MARKING DIAGRAM RqJA PD 2xx M G G RqJA TJ, Tstg Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR− 5 = 1.0  0.75  0.062 in. 2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina. 2xx = Device Code x = H for MMBTA55LT1 xx = GM for MMBTA56LT1 M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. © Semiconductor Components Industries, LLC, 2010 October, 2010 − Rev. 6 1 Publication Order Number: MMBTA55LT1/D MMBTA55LT1G, MMBTA56LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector − Emitter Breakdown Voltage (Note 3) (IC = −1.0 mAdc, IB = 0) Emitter − Base Breakdown Voltage (IE = −100 mAdc, IC = 0) Collector Cutoff Current (VCE = −60 Vdc, IB = 0) Collector Cutoff Current (VCB = −60 Vdc, IE = 0) (VCB = −80 Vdc, IE = 0) ON CHARACTERISTICS DC Current Gain (IC = −10 mAdc, VCE = −1.0 Vdc) (IC = −100 mAdc, VCE = −1.0 Vdc) Collector − Emitter Saturation Voltage (IC = −100 mAdc, IB = −10 mAdc) Base − Emitter On Voltage (IC = −100 mAdc, VCE = −1.0 Vdc) SMALL− SIGNAL CHARACTERISTICS Current − Gain − Bandwidth Product (Note 4) (IC = −100 mAdc, VCE = −1.0 Vdc, f = 100 MHz) 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 4. fT is defined as the frequency at which |hfe| extrapolates to unity. fT 50 − MHz hFE 100 100 − − − − −0.25 −1.2 − MMBTA55 MMBTA56 MMBTA55 MMBTA56 V(BR)CEO −60 −80 −4.0 − − − − − − −0.1 −0.1 −0.1 Vdc Symbol Min Max Unit V(BR)EBO ICES ICBO Vdc mAdc mAdc VCE(sat) VBE(on) Vdc Vdc TURN-ON TIME -1.0 V VCC +40 V TURN-OFF TIME +VBB VCC +40 V 5.0 ms +10 V Vin 0 tr = 3.0 ns 5.0 mF 100 RB RL OUTPUT Vin * CS t 6.0 pF 5.0 mF 100 RB RL OUTPUT * CS t 6.0 pF 100 100 5.0 ms tr = 3.0 ns *Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities Figure 1. Switching Time Test Circuits http://onsemi.com 2 MMBTA55LT1G, MMBTA56LT1G f T , CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) 200 VCE = -2.0 V TJ = 25°C C, CAPACITANCE (pF) 100 70 50 100 70 50 30 20 Cibo TJ = 25°C 10 7.0 30 20 -2.0 -3.0 5.0 -0.1 -0.2 Cobo Figure 2. Current−Gain — Bandwidth Product -5.0 -7.0 -10 -20 -30 -50 -70 -100 IC, COLLECTOR CURRENT (mA) -200 -0.5 -1.0 -2.0 -5.0 -10 -20 VR, REVERSE VOLTAGE (VOLTS) -50 -100 Figure 3. Capacitance 1.0 k 700 500 300 t, TIME (ns) 200 100 70 50 30 20 VCC = -40 V IC/IB = 10 IB1 = IB2 TJ = 25°C 400 TJ = 125°C ts h FE, DC CURRENT GAIN 200 25°C -55°C VCE = -1.0 V tf 100 80 60 td @ VBE(off) = -0.5 V tr -500 40 -0.5 -1.0 -2.0 -50 -100 -200 -5.0 -10 -20 IC, COLLECTOR CURRENT (mA) -500 10 -5.0 -7.0 -10 -50 -70 -100 -200 -300 -20 -30 IC, COLLECTOR CURRENT (mA) Figure 4. Switching Time 1 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) IC/IB = 10 VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 150°C 25°C −55°C 0.1 1.1 1.0 0.9 0.8 −55°C 0.7 0.6 0.5 0.4 0.3 0.2 150°C 25°C Figure 5. DC Current Gain IC/IB = 10 0.01 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 6. Collector Emitter Saturation Voltage vs. Collector Current Figure 7. Base Emitter Saturation Voltage vs. Collector Current http://onsemi.com 3 MMBTA55LT1G, MMBTA56LT1G VBE(on), BASE−EMITTER VOLTAGE (V) 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 150°C −55°C 25°C VCE = 1 V VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) -1.0 TJ = 25°C -0.8 IC = -50 mA -0.6 IC = -100 mA IC = -250 mA IC = -500 mA -0.4 IC = -10 mA -0.2 0.0001 0.001 0.01 0.1 1 0 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 IC, COLLECTOR CURRENT (A) IB, BASE CURRENT (mA) Figure 8. Base Emitter Voltage vs. Collector Current -0.8 IC, COLLECTOR CURRENT (A) 1 Figure 9. Collector Saturation Region R qVB , TEMPERATURE COEFFICIENT (mV/ °C) 1S 100 mS 0.1 10 mS 1 mS -1.2 -1.6 RqVB for VBE -2.0 Thermal Limit 0.01 -2.4 -2.8 -0.5 -1.0 -2.0 0.001 -5.0 -10 -20 -50 -100 -200 -500 IC, COLLECTOR CURRENT (mA) 0.1 1 10 100 VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 10. Base−Emitter Temperature Coefficient Figure 11. Safe Operating Area ORDERING INFORMATION Device Order Number MMBTA55LT1G MMBTA55LT3G MMBTA56LT1G MMBTA56LT3G Package Type SOT−23 (Pb−Free) SOT−23 (Pb−Free) SOT−23 (Pb−Free) SOT−23 (Pb−Free) Shipping† 3,000 / Tape & Reel 10,000 / Tape & Reel 3,000 / Tape & Reel 10,000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 4 MMBTA55LT1G, MMBTA56LT1G PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN D SEE VIEW C 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 E 1 2 HE c e b q 0.25 A A1 L L1 VIEW C DIM A A1 b c D E e L L1 HE MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 5 MMBTA55LT1/D
MMBTA55LT1G_10 价格&库存

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MMBTA55LT1G
  •  国内价格
  • 5+0.2533
  • 20+0.23095
  • 100+0.2086
  • 500+0.18625
  • 1000+0.17582
  • 2000+0.16837

库存:40