MMBTA55LT1G_10

MMBTA55LT1G, MMBTA56LT1G Driver Transistors PNP Silicon Features http://onsemi.com COLLECTOR 3 1 BASE Symbol MMBTA55 MMBTA56 MMBTA55 MMBTA56 VCEO Value −60 −80 −60 −80 −4.0 −500 Unit Vdc 3 Vdc 1 2 Vdc mAdc SOT−23 CASE 318 STYLE 6 2 EMITTER • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Collector − Emitter Voltage Collector − Base Voltage VCBO Emitter − Base Voltage Collector Current − Continuous VEBO IC THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 556 300 2.4 417 − 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C 1 MARKING DIAGRAM RqJA PD 2xx M G G RqJA TJ, Tstg Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR− 5 = 1.0  0.75  0.062 in. 2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina. 2xx = Device Code x = H for MMBTA55LT1 xx = GM for MMBTA56LT1 M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. © Semiconductor Components Industries, LLC, 2010 October, 2010 − Rev. 6 1 Publication Order Number: MMBTA55LT1/D MMBTA55LT1G, MMBTA56LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector − Emitter Breakdown Voltage (Note 3) (IC = −1.0 mAdc, IB = 0) Emitter − Base Breakdown Voltage (IE = −100 mAdc, IC = 0) Collector Cutoff Current (VCE = −60 Vdc, IB = 0) Collector Cutoff Current (VCB = −60 Vdc, IE = 0) (VCB = −80 Vdc, IE = 0) ON CHARACTERISTICS DC Current Gain (IC = −10 mAdc, VCE = −1.0 Vdc) (IC = −100 mAdc, VCE = −1.0 Vdc) Collector − Emitter Saturation Voltage (IC = −100 mAdc, IB = −10 mAdc) Base − Emitter On Voltage (IC = −100 mAdc, VCE = −1.0 Vdc) SMALL− SIGNAL CHARACTERISTICS Current − Gain − Bandwidth Product (Note 4) (IC = −100 mAdc, VCE = −1.0 Vdc, f = 100 MHz) 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 4. fT is defined as the frequency at which |hfe| extrapolates to unity. fT 50 − MHz hFE 100 100 − − − − −0.25 −1.2 − MMBTA55 MMBTA56 MMBTA55 MMBTA56 V(BR)CEO −60 −80 −4.0 − − − − − − −0.1 −0.1 −0.1 Vdc Symbol Min Max Unit V(BR)EBO ICES ICBO Vdc mAdc mAdc VCE(sat) VBE(on) Vdc Vdc TURN-ON TIME -1.0 V VCC +40 V TURN-OFF TIME +VBB VCC +40 V 5.0 ms +10 V Vin 0 tr = 3.0 ns 5.0 mF 100 RB RL OUTPUT Vin * CS t 6.0 pF 5.0 mF 100 RB RL OUTPUT * CS t 6.0 pF 100 100 5.0 ms tr = 3.0 ns *Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities Figure 1. Switching Time Test Circuits http://onsemi.com 2 MMBTA55LT1G, MMBTA56LT1G f T , CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) 200 VCE = -2.0 V TJ = 25°C C, CAPACITANCE (pF) 100 70 50 100 70 50 30 20 Cibo TJ = 25°C 10 7.0 30 20 -2.0 -3.0 5.0 -0.1 -0.2 Cobo Figure 2. Current−Gain — Bandwidth Product -5.0 -7.0 -10 -20 -30 -50 -70 -100 IC, COLLECTOR CURRENT (mA) -200 -0.5 -1.0 -2.0 -5.0 -10 -20 VR, REVERSE VOLTAGE (VOLTS) -50 -100 Figure 3. Capacitance 1.0 k 700 500 300 t, TIME (ns) 200 100 70 50 30 20 VCC = -40 V IC/IB = 10 IB1 = IB2 TJ = 25°C 400 TJ = 125°C ts h FE, DC CURRENT GAIN 200 25°C -55°C VCE = -1.0 V tf 100 80 60 td @ VBE(off) = -0.5 V tr -500 40 -0.5 -1.0 -2.0 -50 -100 -200 -5.0 -10 -20 IC, COLLECTOR CURRENT (mA) -500 10 -5.0 -7.0 -10 -50 -70 -100 -200 -300 -20 -30 IC, COLLECTOR CURRENT (mA) Figure 4. Switching Time 1 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) IC/IB = 10 VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 150°C 25°C −55°C 0.1 1.1 1.0 0.9 0.8 −55°C 0.7 0.6 0.5 0.4 0.3 0.2 150°C 25°C Figure 5. DC Current Gain IC/IB = 10 0.01 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 6. Collector Emitter Saturation Voltage vs. Collector Current Figure 7. Base Emitter Saturation Voltage vs. Collector Current http://onsemi.com 3 MMBTA55LT1G, MMBTA56LT1G VBE(on), BASE−EMITTER VOLTAGE (V) 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 150°C −55°C 25°C VCE = 1 V VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) -1.0 TJ = 25°C -0.8 IC = -50 mA -0.6 IC = -100 mA IC = -250 mA IC = -500 mA -0.4 IC = -10 mA -0.2 0.0001 0.001 0.01 0.1 1 0 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 IC, COLLECTOR CURRENT (A) IB, BASE CURRENT (mA) Figure 8. Base Emitter Voltage vs. Collector Current -0.8 IC, COLLECTOR CURRENT (A) 1 Figure 9. Collector Saturation Region R qVB , TEMPERATURE COEFFICIENT (mV/ °C) 1S 100 mS 0.1 10 mS 1 mS -1.2 -1.6 RqVB for VBE -2.0 Thermal Limit 0.01 -2.4 -2.8 -0.5 -1.0 -2.0 0.001 -5.0 -10 -20 -50 -100 -200 -500 IC, COLLECTOR CURRENT (mA) 0.1 1 10 100 VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 10. Base−Emitter Temperature Coefficient Figure 11. Safe Operating Area ORDERING INFORMATION Device Order Number MMBTA55LT1G MMBTA55LT3G MMBTA56LT1G MMBTA56LT3G Package Type SOT−23 (Pb−Free) SOT−23 (Pb−Free) SOT−23 (Pb−Free) SOT−23 (Pb−Free) Shipping† 3,000 / Tape & Reel 10,000 / Tape & Reel 3,000 / Tape & Reel 10,000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 4 MMBTA55LT1G, MMBTA56LT1G PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN D SEE VIEW C 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 E 1 2 HE c e b q 0.25 A A1 L L1 VIEW C DIM A A1 b c D E e L L1 HE MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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