MMBTA92L, SMMBTA92L,
MMBTA93L
High Voltage Transistors
PNP Silicon
www.onsemi.com
Features
• S Prefix for Automotive and Other Applications Requiring Unique
•
COLLECTOR
3
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
1
BASE
MAXIMUM RATINGS
Rating
Symbol
92
93
Unit
Collector −Emitter Voltage
VCEO
−300
−200
Vdc
Collector −Base Voltage
VCBO
−300
−200
Vdc
Emitter −Base Voltage
VEBO
−5.0
−5.0
Vdc
Collector Current — Continuous
IC
−500
mAdc
DEVICE MARKING
THERMAL CHARACTERISTICS
Total Device Dissipation FR−5 Board
(Note 1) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation (Note 2)
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
MARKING
DIAGRAM
3
1
2
SOT−23 (TO−236AF)
CASE 318
STYLE 6
MMBTA92L, SMMBTA92L = 2D; MMBTA93LT1 = 2E
Characteristic
2
EMITTER
2x
M
G
2x MG
G
= Specific Device Code
= Date Code*
= Pb−Free Package
Symbol
Max
Unit
PD
225
mW
1.8
mW/°C
(*Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
RqJA
556
°C/W
PD
300
mW
2.4
mW/°C
RqJA
417
°C/W
TJ, Tstg
−55 to
+150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
ORDERING INFORMATION
Package
Shipping†
MMBTA92LT1G
SOT−23
(Pb−Free)
3000 / Tape & Reel
SMMBTA92LT1G
SOT−23
(Pb−Free)
3000 / Tape & Reel
MMBTA92LT3G
SOT−23 10000 / Tape & Reel
(Pb−Free)
SMMBTA92LT3G
SOT−23 10000 / Tape & Reel
(Pb−Free)
MMBTA93LT1G
SOT−23
(Pb−Free)
Device
3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 1994
October, 2016 − Rev. 11
1
Publication Order Number:
MMBTA92LT1/D
MMBTA92L, SMMBTA92L, MMBTA93L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Max
−300
−200
−
−
−300
−200
−
−
−5.0
−
−
−
−0.25
−0.25
−
−0.1
Both Types
Both Types
25
40
−
−
MMBTA92, SMMBTA92
MMBTA93
25
25
−
−
−
−
−0.5
−0.5
VBE(sat)
−
−0.9
Vdc
fT
50
−
MHz
−
−
6.0
8.0
Characteristic
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 3)
(IC = −1.0 mAdc, IB = 0)
V(BR)CEO
MMBTA92, SMMBTA92
MMBTA93
Collector −Base Breakdown Voltage
(IC = −100 mAdc, IE = 0)
Vdc
V(BR)CBO
MMBTA92, SMMBTA92
MMBTA93
Emitter −Base Breakdown Voltage
(IE = −100 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = −200 Vdc, IE = 0)
(VCB = −160 Vdc, IE = 0)
Vdc
mAdc
ICBO
MMBTA92, SMMBTA92
MMBTA93
Emitter Cutoff Current
(VEB = −3.0 Vdc, IC = 0)
IEBO
Vdc
mAdc
ON CHARACTERISTICS (Note 3)
DC Current Gain
(IC = −1.0 mAdc, VCE = −10 Vdc)
(IC = −10 mAdc, VCE = −10 Vdc)
hFE
(IC = −30 mAdc, VCE = −10 Vdc)
Collector −Emitter Saturation Voltage
(IC = −20 mAdc, IB = −2.0 mAdc)
−
VCE(sat)
MMBTA92, SMMBTA92
MMBTA93
Base−Emitter Saturation Voltage
(IC = −20 mAdc, IB = −2.0 mAdc)
Vdc
SMALL− SIGNAL CHARACTERISTICS
Current −Gain — Bandwidth Product
(IC = −10 mAdc, VCE = −20 Vdc, f = 100 MHz)
Collector−Base Capacitance
(VCB = −20 Vdc, IE = 0, f = 1.0 MHz)
Ccb
MMBTA92, SMMBTA92
MMBTA93
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
300
hFE , DC CURRENT GAIN
VCE = 10 Vdc
TJ = +125°C
250
200
25°C
150
-55°C
100
50
0
0.1
1.0
10
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
www.onsemi.com
2
100
MMBTA92L, SMMBTA92L, MMBTA93L
f,
T CURRENT-GAIN — BANDWIDTH (MHz)
100
C, CAPACITANCE (pF)
Cib @ 1MHz
10
Ccb @ 1MHz
1.0
0.1
0.1
1.0
10
100
VR, REVERSE VOLTAGE (VOLTS)
150
130
110
90
70
50
TJ = 25°C
VCE = 20 Vdc
F = 20 MHz
30
10
1000
1
Figure 2. Capacitance
3
5
11
13
15
7
9
IC, COLLECTOR CURRENT (mA)
17
19
21
Figure 3. Current−Gain − Bandwidth
1.4
VCE(sat) @ 25°C, IC/IB = 10
VCE(sat) @ 125°C, IC/IB = 10
VCE(sat) @ -55°C, IC/IB = 10
VBE(sat) @ 25°C, IC/IB = 10
1.0
0.8
VBE(sat) @ 125°C, IC/IB = 10
VBE(sat) @ -55°C, IC/IB = 10
VBE(on) @ 25°C, VCE = 10 V
VBE(on) @ 125°C, VCE = 10 V
VBE(on) @ -55°C, VCE = 10 V
0.6
0.4
0.2
0.0
0.1
1.0
10
IC, COLLECTOR CURRENT (mA)
100
Figure 4. “ON” Voltages
1000
IC, COLLECTOR CURRENT (mA)
V, VOLTAGE (VOLTS)
1.2
100 ms
1.0 s
10 ms
100 ms
100
10 ms
1.0 ms
10
Single Pulse Test TA = 25°C
1
1
100
10
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 5. Safe Operating Area
www.onsemi.com
3
1000
MMBTA92L, SMMBTA92L, MMBTA93L
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
0.25
3
E
1
2
T
HE
DIM
A
A1
b
c
D
E
e
L
L1
HE
T
L
3X b
L1
VIEW C
e
TOP VIEW
A
A1
SIDE VIEW
c
SEE VIEW C
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.14
0.20
2.90
3.04
1.30
1.40
1.90
2.04
0.43
0.55
0.54
0.69
2.40
2.64
−−−
10 °
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0°
INCHES
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10°
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
3X
2.90
3X
0.90
0.95
PITCH
0.80
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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4
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MMBTA29LT1/D
