MMBTA93

MMBTA92LT1G, MMBTA93LT1G High Voltage Transistors PNP Silicon Features http://onsemi.com COLLECTOR 3 1 BASE 2 EMITTER 3 1 2 • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC 92 −300 −300 −5.0 −500 93 −200 −200 −5.0 Unit Vdc Vdc Vdc mAdc DEVICE MARKING MMBTA92LT1 = 2D; MMBTA93LT1 = 2E MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation (Note 2) Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 −55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C SOT−23 (TO−236AF) CASE 318 STYLE 6 2x M G 2x MG G = Specific Device Code = Date Code* = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device MMBTA92LT1G MMBTA92LT3G MMBTA93LT1G Package SOT−23 (Pb−Free) Shipping† 3000 / Tape & Reel Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. SOT−23 10000 / Tape & Reel (Pb−Free) SOT−23 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2010 July, 2010 − Rev. 8 1 Publication Order Number: MMBTA92LT1/D MMBTA92LT1G, MMBTA93LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector − Emitter Breakdown Voltage (Note 3) (IC = −1.0 mAdc, IB = 0) Collector − Base Breakdown Voltage (IC = −100 mAdc, IE = 0) Emitter − Base Breakdown Voltage (IE = −100 mAdc, IC = 0) Collector Cutoff Current (VCB = −200 Vdc, IE = 0) (VCB = −160 Vdc, IE = 0) Emitter Cutoff Current (VEB = −3.0 Vdc, IC = 0) MMBTA92 MMBTA93 MMBTA92 MMBTA93 MMBTA92 MMBTA93 V(BR)CEO Vdc −300 −200 −300 −200 −5.0 − − Vdc − − − Vdc mAdc V(BR)CBO V(BR)EBO ICBO − − − −0.25 −0.25 −0.1 IEBO mAdc ON CHARACTERISTICS (Note 3) DC Current Gain (IC = −1.0 mAdc, VCE = −10 Vdc) (IC = −10 mAdc, VCE = −10 Vdc) (IC = −30 mAdc, VCE = −10 Vdc) Collector − Emitter Saturation Voltage (IC = −20 mAdc, IB = −2.0 mAdc) Base−Emitter Saturation Voltage (IC = −20 mAdc, IB = −2.0 mAdc) Both Types Both Types MMBTA92 MMBTA93 MMBTA92 MMBTA93 VCE(sat) hFE − 25 40 25 25 − − − − − − − Vdc −0.5 −0.5 −0.9 Vdc VBE(sat) SMALL− SIGNAL CHARACTERISTICS Current − Gain — Bandwidth Product (IC = −10 mAdc, VCE = −20 Vdc, f = 100 MHz) Collector−Base Capacitance (VCB = −20 Vdc, IE = 0, f = 1.0 MHz) 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. MMBTA92 MMBTA93 fT Ccb 50 − MHz pF − − 6.0 8.0 300 250 h FE , DC CURRENT GAIN 200 25°C 150 100 50 0 0.1 1.0 IC, COLLECTOR CURRENT (mA) 10 100 -55°C TJ = +125°C VCE = 10 Vdc Figure 1. DC Current Gain http://onsemi.com 2 MMBTA92LT1G, MMBTA93LT1G 100 Cib @ 1MHz f T, CURRENT-GAIN — BANDWIDTH (MHz) 150 130 110 90 70 50 30 10 1 3 5 11 13 15 7 9 IC, COLLECTOR CURRENT (mA) TJ = 25°C VCE = 20 Vdc F = 20 MHz 17 19 21 C, CAPACITANCE (pF) 10 Ccb @ 1MHz 1.0 0.1 0.1 1.0 10 100 VR, REVERSE VOLTAGE (VOLTS) 1000 Figure 2. Capacitance Figure 3. Current−Gain − Bandwidth 1.4 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 0.2 0.0 0.1 1.0 10 IC, COLLECTOR CURRENT (mA) 100 VCE(sat) @ 25°C, IC/IB = 10 VCE(sat) @ 125°C, IC/IB = 10 VCE(sat) @ -55°C, IC/IB = 10 VBE(sat) @ 25°C, IC/IB = 10 VBE(sat) @ 125°C, IC/IB = 10 VBE(sat) @ -55°C, IC/IB = 10 VBE(on) @ 25°C, VCE = 10 V VBE(on) @ 125°C, VCE = 10 V VBE(on) @ -55°C, VCE = 10 V Figure 4. “ON” Voltages 1 IC, COLLECTOR CURRENT (A) 0.1 1.0 s 0.01 10 ms 0.001 1 10 100 1000 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 5. Safe Operating Area http://onsemi.com 3 MMBTA92LT1G, MMBTA93LT1G PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L L1 HE q MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0° INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10° D SEE VIEW C 3 E 1 2 HE c e b q 0.25 A A1 L L1 VIEW C STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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