MMBTH10LT1G

MMBTH10LT1G, MMBTH10-4LT1G VHF/UHF Transistor NPN Silicon Features http://onsemi.com COLLECTOR 3 1 BASE Symbol VCEO VCBO VEBO Value 25 30 3.0 Unit Vdc Vdc Vdc 2 EMITTER • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient (Note 1) Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient (Note 2) Junction and Storage Temperature Range Symbol PD 225 1.8 RθJA PD 300 2.4 RθJA TJ, Tstg 417 −55 to +150 mW mW/°C °C/W MMBTH10LT1G °C 556 mW mW/°C °C/W Max Unit 1 2 3 SOT−23 (TO−236AB) CASE 318 STYLE 6 MARKING DIAGRAMS 3EM MG G 3E4 MG G MMBTH10−04LT1G Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina 3EM, 3E4 = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device MMBTH10LT1G MMBTH10LT3G MMBTH10−4LT1G Package SOT−23 (Pb−Free) SOT−23 (Pb−Free) SOT−23 (Pb−Free) Shipping† 3000/Tape & Reel 10000/Tape & Reel 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2009 August, 2009 − Rev. 3 1 Publication Order Number: MMBTH10LT1/D MMBTH10LT1G, MMBTH10−4LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector−Base Breakdown Voltage (IC = 100 μAdc, IE = 0) Emitter−Base Breakdown Voltage (IE = 10 μAdc, IC = 0) Collector Cutoff Current (VCB = 25 Vdc, IE = 0) Emitter Cutoff Current (VEB = 2.0 Vdc, IC = 0) ON CHARACTERISTICS DC Current Gain (IC = 4.0 mAdc, VCE = 10 Vdc) Collector−Emitter Saturation Voltage (IC = 4.0 mAdc, IB = 0.4 mAdc) Base−Emitter On Voltage (IC = 4.0 mAdc, VCE = 10 Vdc) SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product (IC = 4.0 mAdc, VCE = 10 Vdc, f = 100 MHz) Collector−Base Capacitance (VCB= 10 Vdc, IE = 0, f = 1.0 MHz) Common−Base Feedback Capacitance (VCB= 10 Vdc, IE = 0, f = 1.0 MHz) Collector Base Time Constant (IC= 4.0 mAdc, VCB = 10 Vdc, f = 31.8 MHz) MMBTH10LT1 MMBTH10−4LT1 fT MHz 650 800 − − − − − − − − − − 0.7 0.65 9.0 pF pF ps MMBTH10LT1 MMBTH10−4LT1 hFE − 60 120 − − − − − − − 240 0.5 0.95 Vdc Vdc V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 25 30 3.0 − − − − − − − − − − 100 100 Vdc Vdc Vdc nAdc nAdc Symbol Min Typ Max Unit VCE(sat) VBE Ccb Crb rb′Cc http://onsemi.com 2 MMBTH10LT1G, MMBTH10−4LT1G TYPICAL CHARACTERISTICS COMMON−BASE y PARAMETERS versus FREQUENCY (VCB = 10 Vdc, IC = 4.0 mAdc, TA = 25°C) yib, INPUT ADMITTANCE 80 y ib , INPUT ADMITTANCE (mmhos) 70 60 - bib jb ib (mmhos) 50 40 30 20 10 0 100 200 300 400 500 f, FREQUENCY (MHz) 700 1000 - 50 - 60 - 20 1000 MHz - 30 - 40 700 400 200 100 gib 0 - 10 0 10 20 30 40 50 gib (mmhos) 60 70 80 Figure 1. Rectangular Form Figure 2. Polar Form yfb, FORWARD TRANSFER ADMITTANCE y ib , FORWARD TRANSFER ADMITTANCE (mmhos) 70 60 50 40 30 20 10 0 - 10 - 20 - 30 10 100 200 300 400 500 f, FREQUENCY (MHz) 700 1000 70 60 50 40 10 30 20 gfb (mmhos) 0 - 10 - 20 - 30 20 jb fb (mmhos) - gfb 40 bfb 50 100 60 200 400 600 700 30 1000 MHz Figure 3. Rectangular Form Figure 4. Polar Form http://onsemi.com 3 MMBTH10LT1G, MMBTH10−4LT1G TYPICAL CHARACTERISTICS COMMON−BASE y PARAMETERS versus FREQUENCY (VCB = 10 Vdc, IC = 4.0 mAdc, TA = 25°C) yrb, REVERSE TRANSFER ADMITTANCE y rb , REVERSE TRANSFER ADMITTANCE (mmhos) 5.0 0 100 4.0 MPS H11 - 1.0 jb rb (mmhos) 200 3.0 -brb 2.0 MPS H10 -brb - 2.0 400 - 3.0 700 1.0 - 4.0 -grb 1000 MHz 700 1000 - 5.0 -2.0 -1.8 -1.2 -0.8 -0.4 0.4 0 grb (mmhos) 0.8 1.2 1.6 2.0 0 100 200 300 400 500 f, FREQUENCY (MHz) Figure 5. Rectangular Form yob, OUTPUT ADMITTANCE 10 yob, OUTPUT ADMITTANCE (mmhos) 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 100 200 300 400 500 f, FREQUENCY (MHz) 700 1000 gob 0 0 2.0 2.0 100 bob jb ob(mmhos) 6.0 8.0 700 10 Figure 6. Polar Form 1000 MHz 4.0 400 200 4.0 6.0 gob (mmhos) 8.0 10 Figure 7. Rectangular Form Figure 8. Polar Form http://onsemi.com 4 MMBTH10LT1G, MMBTH10−4LT1G PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN D SEE VIEW C 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. E 1 2 HE c e b q 0.25 A A1 L L1 VIEW C DIM A A1 b c D E e L L1 HE MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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