MMBV105GLT1
Preferred Device
Silicon Tuning Diode
This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid−state reliability in replacement of mechanical tuning methods.
Features
• Controlled and Uniform Tuning Ratio • Pb−Free Package is Available
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Reverse Voltage Forward Current Device Dissipation @ TA = 25°C Derate above 25°C Junction Temperature Storage Temperature Range Symbol VR IF PD TJ Tstg Value 30 200 225 1.8 +125 −55 to +150 Unit Vdc mAdc mW mW/°C °C °C
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3 Cathode
1 Anode
3 1 2
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
SOT−23 (TO−236) CASE 318 STYLE 8
MARKING DIAGRAM
M4EM G G 1
M4E = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location.
ORDERING INFORMATION
Device MMBV105GLT1 MMBV105GLT1G Package SOT−23 Shipping † 3,000 / Tape & Reel
SOT−23 3,000 / Tape & Reel (Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
Preferred devices are recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2006
1
January, 2006 − Rev. 4
Publication Order Number: MMBV105GLT1/D
MMBV105GLT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Reverse Breakdown Voltage (IR = 10 mAdc) Reverse Voltage Leakage Current (VR = 28 Vdc) Symbol V(BR)R IR Min 30 − Max − 50 Unit Vdc nAdc
Device Type
CT VR = 25 Vdc, f = 1.0 MHz pF Min Max 2.8
Q VR = 3.0 Vdc f = 50 MHz Typ 250 Min 4.0
CR C3/C25 f = 1.0 MHz Max 6.5
MMBV105GLT1
1.5
TYPICAL CHARACTERISTICS
20 18 CT , DIODE CAPACITANCE (pF) Q, FIGURE OF MERIT 16 14 12 10 8.0 6.0 4.0 2.0 0 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 10 10 100 f, FREQUENCY (MHz) 1000 f = 1.0 MHz TA = 25°C VR = 3 Vdc TA = 25°C 100 1000
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Diode Capacitance
Figure 2. Figure of Merit
CT , DIODE CAPACITANCE (NORMALIZED)
1.04 1.03 1.02 1.01 1.00 0.99 0.98 0.97 0.96 −75 −50 −25 0 +25 +50 +75 +100 +125 VR = 3.0 Vdc f = 1.0 MHz
TA, AMBIENT TEMPERATURE (°C)
Figure 3. Diode Capacitance
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2
MMBV105GLT1
PACKAGE DIMENSIONS
SOT−23 (TO−236) CASE 318−08 ISSUE AN
D
3 SEE VIEW C
E
1 2
HE c b e q 0.25
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094
A L A1 L1 VIEW C
DIM A A1 b c D E e L L1 HE
MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10
MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083
MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104
STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE
SOLDERING FOOTPRINT*
0.95 0.037 0.95 0.037
2.0 0.079 0.9 0.035
SCALE 10:1
0.8 0.031
mm inches
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
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PUBLICATION ORDERING INFORMATION
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3
MMBV105GLT1/D
